PD - 91274D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY7130CM 100K Rads (Si)
IRHY3130CM 300K Rads (Si)
IRHY4130CM 600K Rads (Si)
IRHY8130CM 1000K Rads (Si)
R
DS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
I
D
14.4A
14.4A
14.4A
14.4A
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard HEXFET
TECHNOLOGY
™
®
QPL Part Number
JANSR2N7380
JANSF2N7380
JANSG2N7380
JANSH2N7380
TO-257AA
International Rectifier’s RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
14.4
9.1
58
75
0.6
±20
150
—
—
6.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in.(1.6mm) from case for 10s)
7.0 (Typical )
g
www.irf.com
1
12/17/01
ETC [ ETC ]
