NTGS3446
Power MOSFET
5 Amps, 20 Volts
N–Channel TSOP–6
Features
•
•
•
•
•
•
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
http://onsemi.com
5 AMPERES
20 VOLTS
RDS(on) = 45 mW
N–Channel
1 2 5 6
Applications
•
Power Management in portable and battery–powered products, i.e.
•
Lithium Ion Battery Applications
•
Note Book PC
computers, printers, PCMCIA cards, cellular and cordless
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Gate–Source Voltage
– Continuous
Drain – Continuous
– Continuous @ 70°C
– Single Pulse (tp
v10
µs)
Total Power Dissipation
Operating and Storage
Temperature Range
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc,
IL = 5.8 A, L = TBD mH, RG = 25
Ω)
Thermal Resistance
Junction–to–Ambient (Note 1.)
Steady State
Junction–to–Ambient (Note 2.)
Junction–to–Lead
Steady State
1. When surface mounted to Min Pad.
2. When surface mounted to 1″ x 1″ FR4 Board.
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
Value
20
"20
5.8
TBD
20
1.6
–55 to
150
TBD
Adc
Unit
Vdc
Vdc
4
3
MARKING
DIAGRAM
Watts
°C
mJ
4
5
6
3
2
1
TSOP–6
CASE 318G
STYLE 1
446
W
°C/W
R
θJA
R
θJA
R
θJL
TBD
TBD
TBD
W
= Work Week
PIN ASSIGNMENT
Drain Drain Source
6
5
4
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS3446T1
Package
TSOP–6
Shipping
3000 Tape & Reel
©
Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 1
Publication Order Number:
NTGS3446/D
ETC [ ETC ]
