ST330S Series
Bulletin I25156 rev. B 01/94
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
ST330S
1000
1.0
Units Conditions
A/µs
Gate drive 20V, 20Ω, t
≤
1µs
r
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current A, di
g
/dt = 1A/µs
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/µs, V
R
= 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
t
d
µs
t
q
100
Blocking
Parameter
dv/dt
I
RRM
I
DRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
ST330S
500
50
Units Conditions
V/µs
mA
T
J
= T
J
max. linear to 80% rated V
DRM
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
Triggering
Parameter
P
GM
Maximum peak gate power
ST330S
10.0
2.0
3.0
20
Units Conditions
W
A
T
J
= T
J
max, t
≤
5ms
p
P
G(AV)
Maximum average gate power
I
GM
Max. peak positive gate current
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
≤
5ms
p
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
TYP.
I
GT
DC gate current required
to trigger
200
100
50
V
GT
DC gate voltage required
to trigger
2.5
1.8
1.1
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
V
5.0
MAX.
-
200
-
-
3.0
-
10
0.25
mA
V
V
mA
T
J
= T
J
max, t
p
≤
5ms
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T
J
= T
J
max
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