Technische Information / Technical Information
Netz-Thyristor-Modul
Phase Control Thyristor Module
TT 285 N 12...16
T
vj
= - 40°C...T
vj max
T
vj
= - 40°C...T
vj max
T
vj
= + 25°C...T
vj max
N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
Freiwerdezeit
circuit commutated turn-off time
T
vj
= T
vj max
, i
T
= 800A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6V
T
vj
= 25°C, v
D
= 6V
T
vj
= T
vj max
, v
D
= 6V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6V, R
A
= 5Ω
Ω
T
vj
= 25°C, v
D
= 6V, R
GK
≥
10Ω
Ω
i
GM
= 1A, di
G
/dt = 1A/µs, t
G
= 20µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, i
TM
= 350A
v
RM
= 100V, V
DM
= 0,67 V
DRM
dv
D
/dt = 20V/µs, -di
T
/dt = 10A/µs
5. Kennbuchstabe / 5th letter O
RMS, f = 50Hz, t = 1min
RMS, f = 50Hz, t = 1sec
T
C
= 92°C
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f = 50Hz, i
GM
= 1A, di
G
/dt = 1A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6. Kennbuchstabe / 6th letter F
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200, 1400
1600
1200, 1400
1600
1300, 1500
1700
450
285
9100
8000
414000
320000
250
V
V
V
V
V
V
A
A
A
A
A²s
A²s
A/µs
1000
V/µs
v
T
V
(TO)
r
T
I
GT
V
GT
I
GD
V
GD
I
H
I
L
i
D
, i
R
t
gd
t
q
max.
1,48
0,8
0,65
V
V
mΩ
Ω
mA
V
mA
mA
V
mA
mA
mA
µs
max.
max.
max.
max.
max.
max.
max.
max.
max.
200
2,0
10
5
0,2
300
1200
70
3,0
typ.
V
ISOL
250
3,0
3,6
µs
kV
kV
Isolations-Prüfspannung
insulation test voltage
MOD-MA; R. Jörke
27. Nov 97
A 123/97
Seite/page 1(4)
ETC [ ETC ]
