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2N5324 参数 Datasheet PDF下载

2N5324图片预览
型号: 2N5324
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管| BJT | PNP | 150V V( BR ) CEO | 10A I(C ) | TO- 3\n [TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-3 ]
分类和应用: 晶体晶体管
文件页数/大小: 20 页 / 1041 K
品牌: ETC [ ETC ]
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CY7C1339
128K x 32 Synchronous-Pipelined Cache RAM
Features
• Supports 100-MHz bus for Pentium and PowerPC™
operations with zero wait states
• Fully registered inputs and outputs for pipelined oper-
ation
• 128K by 32 common I/O architecture
• 3.3V core power supply
• 2.5V / 3.3V I/O operation
• Fast clock-to-output times
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
— 5.5 ns (for 100-MHz device)
• User-selectable burst counter supporting Intel Pen-
tium interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100 TQFP pinout
• “ZZ” Sleep Mode option and Stop Clock option
The CY7C1339 I/O pins can operate at either the 2.5V or the
3.3V level; the I/O pins are 3.3V tolerant when V
DDQ
=2.5V.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. Max-
imum access delay from the clock rise is 3.5 ns (166-MHz
device).
The CY7C1339 supports either the interleaved burst se-
quence used by the Intel Pentium processor or a linear burst
sequence used by processors such as the PowerPC. The burst
sequence is selected through the MODE pin. Accesses can
be initiated by asserting either the Processor Address Strobe
(ADSP) or the Controller Address Strobe (ADSC) at clock rise.
Address advancement through the burst sequence is con-
trolled by the ADV input. A 2-bit on-chip wraparound burst
counter captures the first address in a burst sequence and
automatically increments the address for the rest of the burst
access.
Byte write operations are qualified with the four Byte Write
Select (BW
[3:0]
) inputs. A Global Write Enable (GW) overrides
all byte write inputs and writes data to all four bytes. All writes
are conducted with on-chip synchronous self-timed write cir-
cuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank se-
lection and output three-state control. In order to provide prop-
er data during depth expansion, OE is masked during the first
clock of a read cycle when emerging from a deselected state.
Functional Description
The CY7C1339 is a 3.3V, 128K by 32 synchronous-pipelined
cache SRAM designed to support zero wait state secondary
cache with minimal glue logic.
Logic Block Diagram
CLK
ADV
ADSC
ADSP
A
[16:0]
GW
BWE
BW
3
BW
2
MODE
(A
[1;0]
) 2
BURST Q
0
CE COUNTER
Q
1
CLR
Q
ADDRESS
CE REGISTER
D
D
DQ[31:24] Q
BYTEWRITE
REGISTERS
15
17
17
15
128KX32
MEMORY
ARRAY
D DQ[23:16] Q
BYTEWRITE
REGISTERS
D
Q
DQ[15:8]
BYTEWRITE
REGISTERS
Q
DQ[7:0]
BYTEWRITE
REGISTERS
BW
1
D
BW
0
CE
1
CE
2
CE
3
32
32
D
ENABLE Q
CE REGISTER
CLK
Q
D
ENABLE DELAY
REGISTER
CLK
OUTPUT
REGISTERS
CLK
INPUT
REGISTERS
CLK
OE
ZZ
SLEEP
CONTROL
DQ
[31:0]
Intel and Pentium are trademarks of Intel Corporation.
PowerPC is a trademark of IBM Corporation.
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
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