The documentation process conversion measures
necessary to comply with this revision shall be
completed by 21 November 1999.
INCH-POUND
MIL-PRF-19500/583A
21 August 1999
SUPERSEDING
MIL-S-19500/583
23 April 1990
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
TYPES 2N5681 AND 2N5682 JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistor. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (TO-39).
1.3 Maximum ratings. Unless otherwise specified, TA = +25
°
C.
Type
PT 1/
PT
VCBO
VCEO
VEBO
IC
IB
Top and TSTG
TA = +25
°
C TC = +25
°
C
1/
2/
W
2N5681
2N5682
1.0
1.0
W
10
10
V dc
100
120
V dc
100
120
V dc
4.0
4.0
A dc
1.0
1.0
A dc
0.5
0.5
°
C
-65 to +200
1/ Derate linearly 5.7 mW/
°
C for TA > +25
°
C;
1/ Derate linearly 57 mW/
°
C for TC > +25
°
C;
1.4 Primary electrical characteristics at T
A
= +25
°
C.
Limits
h
FE
at VCE = 2.0 V dc 1/
h
FE1
h
FE2
I
C
= 250 mA dc I
C
= 500 mA dc
h
FE3
I
C
= 1.0 A dc
R
θ
JC
max
VBE(sat)1 1/
VCE(sat)1 1/
C
obo
f = 1.0 MHz IC = 250 mA dc IC = 250 mA dc
VCE = 10 V dc VCB = 20 V dc IB = 25 mA dc IB = 25 mA dc
IC = 100 mA dc
IE = 0
/h
fe
/
f = 10 MHz
pF
3.0
50
0.6
1.1
V dc
V dc
Min
Max
40
150
20
5
°
C
17.5
1 Pulsed see 4.5.1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
ETC [ ETC ]
