Shenzhen SI Semiconductors Co., LTD.
Product Specification
MJE SERIES TRANSISTORS
FEATURES
APPLICATION:
HIGH VOLTAGE CAPABILITY
FLUORESCENT LAMP
HIGH SPEED SWITCHING
ELECTRONIC BALLAST
MJE13007
WIDE SOA
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Absolute Maximum Ratings
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Tc=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
VALUE
700
400
9
8.0
90
150
-65-150
TO-220
UNIT
V
V
V
A
W
°C
°C
Electronic Characteristics
CHARACTERISTICS
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Voltage
Emitter -Base Voltage
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Tc=25°C
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
Vcesat
Vbesat
h
FE
TEST CONDITION
V
CB
=700V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=2.0A,I
B
=0.4A
I
C
=8.0A,I
B
=2.0A
I
C
=2A,I
B
=0.4A
V
CE
=5V,I
C
=10mA
V
CE
=5V,I
C
=2.0A
V
CE
=5V,I
C
=8A
V
CC
=5V,
I
C
=0.5A
(UI9600)
7
10
5
4.0
9.0
µS
0.8
40
400
9
0.4
1.5
1.5
MIN
MAX
100
250
UNIT
A
A
V
V
V
V
Storage Time
Falling Time
t
S
t
f
Si semiconductors
2005.12
1
ETC [ ETC ]
