Advanced Power MOSFET
FEATURES
�½
Avalanche Rugged Technology
�½
Rugged Gate Oxide Technology
�½
Lower Input Capacitance
�½
Improved Gate Charge
�½
Extended Safe Operating Area
�½
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -250V
�½
Lower R
DS(ON)
: 3.15
Ω
(Typ.)
SFR/U9214
BV
DSS
= -250 V
R
DS(on)
= 4.0
Ω
I
D
= -1.53 A
D-PAK
2
1
3
1
I-PAK
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
-250
-1.53
-0.97
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-6.1
+ 30
_
110
-1.53
1.9
-4.8
2.5
19
0.15
- 55 to +150
o
C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
6.58
50
110
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001
Fairchild Semiconductor Corporation
ETC [ ETC ]
