N-CHANNEL 20V - 0.004
Ω
- 80A DPAK
STripFET™ III POWER MOSFET
TYPE
STD110NH02L
s
s
s
s
s
s
STD110NH02L
V
DSS
20 V
R
DS(on)
< 0.005
Ω
I
D
80 A(#)
TYPICAL R
DS
(on) = 0.004
Ω
@ 10 V
R
DS(ON)
* Qg INDUSTRY’s BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
3
1
DPAK
TO-252
(Suffix “T4”)
DESCRIPTION
The STD110NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(#)
I
D
(#)
I
DM
(•)
P
tot
E
AS (1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
20
20
±
20
80
80
320
125
0.83
900
-55 to 175
(1) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 10V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
(
•)
Pulse width limited by safe operating area.
(#) Value limited by wire bonding
October 2002
1/9
ETC [ ETC ]
