®
STTH302S
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
3A
200 V
175 °C
0.75 V
35 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
s
s
s
s
SMC
DESCRIPTION
The STTH302S, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Tl = 107°C
δ
=0.5
Value
200
3
100
- 65 + 175
175
Unit
V
A
A
°C
°C
tp = 10 ms Sinusoidal
THERMAL PARAMETERS
Symbol
R
th (j-l)
Junction to lead
Parameter
Maximum
20
Unit
°C/W
April 2002 - Ed: 1A
1/5
ETC [ ETC ]
