深圳市杰鸿顺电子有限公司
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2N5551
TRANSISTOR (NPN)
TO-92
FEATURES
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.180V)
1. EMITTER
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE1
*
DC current gain
h
FE2
*
h
FE3
Collector-emitter saturation voltage
V
CEsat
*
V
BEsat
*
f
T
C
ob
C
ib
NF
Test
conditions
MIN
180
160
6
50
50
80
80
30
0.15
0.2
1
1
100
300
6
20
8
V
V
MHz
pF
pF
dB
250
TYP
MAX
UNIT
V
V
V
nA
nA
I
C
=100μA,I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 120V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
= 1mA
I
C
=50mA, I
B
= 5mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
BE
=0.5V,I
C
=0,f=1MHz
V
CE
=5V,I
c
=0.25mA,
f=10Hz to 15.7KHz,Rs=1kΩ
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
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