Gem micro
semiconductor Inc.
PRODUCT SUMMARY
V
DSS
-30V
I
D
-5.3A
R
DS(on)
(m-ohm) Max
60 @ V
GS
= -10V, ID=-5.3A
90 @ V
GS
= -4.5V,ID=-3.9A
GS4953
Pb
Pb free
Dual P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)
Features
•
Advanced Trench Process Technology
•
High Density Cell Design for Ultra Low On-Resistance
•
Lead free product is acquired
•
Surface mount Package
•
SOP-8
Pin 1: Source 2
Pin 2: Gate 2
Pin 3: Source 1
Pin 4: Gate 1
Pin 5 / 6: Drain 1
Pin 7 / 8: Drain 2
Absolute Maximum Ratings
(T
A
=25
o
C, unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
P
D
I
S
T
j
, T
stg
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
a
Total Power Dissipation @T
A
=25
o
C
Maximum Diode Forward Current
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
b
Parameter
Ratings
-30
±20
-5.3
-20
2.0
-1.9
-55 to +150
50
Units
V
V
A
A
W
A
°C
°C/W
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in
2
2oz Cu PCB board
DS-GS4953-REV00
Aa1
1
ETC [ ETC ]
