Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 100 V 2 A ( Low Ir)
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage:
Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 1 Amperes, Ta=25°C
@ 2 Amperes, 25°C
Maximum Instantaneous Reverse Voltage
VR= 100 Volt, Ta=25°C
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
SYM
VRRM
IFAV
VF MAX
TYPE: MBR2100
Single Anode
Spec. Limit
100
2
0.74
0.82
0.1
0.73
0.81
0.09
Die Sort
105
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
mA
pF
50
-65 to +125
-65 to +125
Amp
°C
°C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
D
ITEM
Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Thickness (Max)
um
2
1245
1025
1203
254
305
Mil
2
49.01
40.3
47.3
10
12
A
C
B
Top-side Metal
SiO2 Passivation
P
+
Guard Ring
Back-side Metal
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
D
ETC [ ETC ]
