深圳市杰鸿顺电子有限公司
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
S8050
FEATURES
TRANSISTOR (NPN)
Complimentary to S8550
Collector current: I
C
=0.5A
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
25
5
0.5
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
CE
= 1V,
I
C
= 500mA
50
0.6
1.2
150
V
V
MHz
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
= 6V, I
C
=20mA
f =
30MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
Test
conditions
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
B
=0
MIN
40
25
5
0.1
0.1
0.1
85
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
= 100
μA
,
I
C
= 0.1mA,
I
E
= 100
μ
A,
V
CB
= 40 V ,
V
CE
= 20 V ,
V
EB
= 5V,
V
CE
= 1V,
I
C
=0
I
C
= 50mA
f
T
h
FE(1)
B
85-160
C
CLASSIFICATION OF
Rank
Range
D
160-300
D3
300-400
120-200
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