STD3N30L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD3N30L
s
s
s
s
s
V
DSS
300 V
R
DS(on)
< 1.4
Ω
I
D
3A
s
s
TYPICAL R
DS(on)
= 1.15
Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
3
1
IPAK
TO-251
(Suffix "-1")
2
1
DPAK
TO-252
(Suffix "T4")
3
APPLICATIONS
s
HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
o
Value
300
300
±
15
3
2
12
50
0.4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(•) Pulse width limited by safe operating area
November 1996
1/10
ETC [ ETC ]
