TIP29, 30
High Power Bipolar Transistor
Features:
•
Collector-Emitter sustaining voltage-
V
CEO(sus)
= 60V (Minimum) - TIP29A, TIP30A
= 100V (Minimum) - TIP29C, TIP30C.
•
Collector-Emitter saturation voltage-
V
CE(sat)
= 0.7V (Maximum) at I
C
= 1.0A.
•
Current gain-bandwidth product f
T
= 3.0MHz (Minimum) at I
C
= 200mA.
Dimensions
A
B
C
D
E
F
G
H
I
J
K
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
L
M
O
Minimum
14.68
9.78
5.01
13.06
3.57
2.42
1.12
0.72
4.22
1.14
2.20
0.33
2.48
3.70
Maximum
15.31
10.42
6.52
14.62
4.07
3.66
1.36
0.96
4.98
1.38
2.97
0.55
2.98
3.90
NPN
TIP29A
TIP29C
PNP
TIP30A
TIP30C
1.0 Ampere
Complementary Silicon
Power Transistors
40 - 100 Volts
30 Watts
TO-220
Dimensions : Millimetres
Page 1
31/05/05 V1.0
ETC [ ETC ]
