2N2222A
High Speed Switching Transistors
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at T
a
= 25°C
Derate above 25°C
Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Rating
40
75
6.0
800
500
2.28
1.2
6.85
-65 to +200
mA
mW
mW/°C
W
mW/°C
°C
V
Unit
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
V
CEO
V
CBO
V
EBO
I
CBO
Collector-Cut off Current
I
CEX
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
I
EBO
I
BL
*V
CE(Sat)
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 60V, I
E
= 0
T
a
= 150°C
V
CB
= 60V, I
E
= 0
V
CE
= 60V, V
EB
= 3V
V
EB
= 3V, I
C
= 0
V
CE
= 60V, V
EB
= 3V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Base Emitter Saturation Voltage
*V
BE(Sat)
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
-
10
10
-
-
-
-
-
-
10
20
0.3
1.0
0.6-1.2
2.0
V
µA
nA
nA
Value
Minimum
40
75
6.0
Maximum
-
-
-
10
nA
V
Unit
Page 2
31/05/05 V1.0
ETC [ ETC ]
