Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N3055
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ2955
・DC
Current Gain -h
FE
= 20–70 @ I
C
= 4 Adc
・Collector–Emitter
Saturation Voltage -
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
・Excellent
Safe Operating Area
APPLICATIONS
・Designed
for general–purpose switching
and amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
固
Collector
导�½�
电半
GE
AN
Open base
Fig.1 simplified outline (TO-3) and symbol
INCH
Base current
Collector-base voltage
ICO
SEM
Open emitter
Open collector
CONDITIONS
TOR
DUC
N
VALUE
100
60
7
15
7
UNIT
V
V
V
A
A
W
℃
℃
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
115
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.52
UNIT
℃/W
ETC [ ETC ]
