Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6609
・High
DC current gain
・Low
saturation voltage
・High
safe operating area
APPLICATIONS
・Designed
for high power audio, disk head
positioners and other linear applications.
These devices can also be used in power
switching circuits such as relay or solenoid
drivers, dc to dc converters or inverters.
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N3773
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
固电
Collector
导�½�
半
GE
HAN
PARAMETER
Fig.1 simplified outline (TO-3) and symbol
INC
ICO
SEM
Open emitter
Open base
Open collector
TOR
DUC
N
VALUE
160
140
7
16
30
4
15
UNIT
V
V
V
A
A
A
A
W
W/℃
℃
℃
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total Power Dissipation
Derate above 25℃
Junction temperature
Storage temperature
T
C
=25℃
150
0.855
150
-65~200
ETC [ ETC ]
