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2N6109 参数 Datasheet PDF下载

2N6109图片预览
型号: 2N6109
PDF下载: 下载PDF文件 查看货源
内容描述: 互补功率晶体管 [Complementary Power Transistors]
分类和应用: 晶体晶体管开关PC局域网
文件页数/大小: 6 页 / 366 K
品牌: ETC [ ETC ]
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2N6109, 6290
Complementary Power Transistors
Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Parameter
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(I
C
= 100mA, I
B
= 0)
Symbol
Minimum
Maximum
Unit
V
CEO(sus)
50
-
V
Collector Cut off Current
(V
CE
= 40V, I
B
= 0)
I
CEO
-
1.0
Collector Cut off Current
(V
CE
= 60V, V
BE(off)
= 1.5V)
(V
CE
= 50V, V
BE(off)
= 1.5V, T
C
= 125°C)
Emitter Cut off Current
(V
EB
= 5.0V, I
C
= 0)
On Characteristics (1)
DC Current Gain
(I
C
= 2.5A, V
CE
= 4.0V)
(I
C
= 7.0A, V
CE
= 4.0V)
Collector-Emitter Saturation Voltage
(I
C
= 7.0A, I
B
= 3.0A)
Base-Emitter On Voltage
(I
C
= 7.0A, V
CE
= 4.0V)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(I
C
= 0.5A, V
CE
= 4.0V, f = 1.0MHz)
Small Signal Current Gain
(I
C
= 0.5A, V
CE
= 4.0V, f = 50kHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤2.0%.
(2) f
T =
h
fe
f
test.
I
CEX
-
0.1
2.0
mA
I
EBO
-
1.0
h
FE
30
2.3
150
-
V
CE(sat)
V
BE(on)
-
-
3.5
V
3.0
f
T
2.5
10
20
-
-
MHz
h
fe
-
Page 3
31/05/05 V1.0