Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・High
current
・Complement
to type BD136/138/140
APPLICATIONS
・Driver
stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
BD135 BD137 BD139
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
电半
固
PARAMETER
导�½�
CONDITIONS
BD135
BD137
Collector-base voltage
BD139
V
CEO
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
CH
IN
Collector-emitter voltage
ANG
BD135
BD137
MIC
E SE
Open base
Open collector
Open emitter
ND
O
OR
UCT
VALUE
45
60
100
45
60
100
5
1.5
2
1
UNIT
V
V
BD139
Emitter -base voltage
V
A
A
A
W
℃
℃
℃
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
≤70℃
8
150
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
ETC [ ETC ]
