Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-126 package
・High
current
・Complement
to type BD135/137/139
APPLICATIONS
・Driver
stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD136 BD138 BD140
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
电半
固
PARAMETER
导�½�
CONDITIONS
BD136
BD138
Collector-base voltage
BD140
V
CEO
V
EBO
I
C
I
CM
I
BM
P
t
T
j
T
stg
T
amb
CH
IN
Collector-emitter voltage
ANG
BD136
BD138
MIC
E SE
Open base
Open collector
Open emitter
ND
O
OR
UCT
VALUE
-45
-60
-100
-45
-60
-100
-5
-1.5
-2
-1
UNIT
V
V
BD140
Emitter -base voltage
V
A
A
A
W
℃
℃
℃
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
Operating ambient temperature
T
mb
≤70℃
8
150
-65~150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W