Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD234 /236 /238
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD233 BD235 BD237
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
BD233
BD235
Collector-base voltage
V
CEO
Collector-emitter voltage
ES
ANG
CH
BD237
BD233
BD235
BD237
Open emitter
ND
ICO
EM
OR
UCT
VALUE
45
60
100
45
60
80
UNIT
V
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
2
6
V
A
A
W
℃
℃
T
C
=25℃
25
150
-65~150