Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD243/A/B/C
DESCRIPTION
・With
TO-220C package
・Complement
to type BD244/A/B/C
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
BD243
BD243A
BD243B
V
CBO
Collector-base voltage
ES
ANG
CH
BD243C
BD243
BD243A
BD243B
BD243C
Open emitter
MIC
E
ND
O
OR
UCT
VALUE
45
60
80
100
45
60
UNIT
V
V
CEO
Collector-emitter voltage
Open base
80
100
Open collector
5
6
10
2
T
C
=25℃
65
150
-65~150
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
A
W
℃
℃
ETC [ ETC ]
