The documentation process conversion measures
necessary to comply with this revision shall be
completed by 10 December 1999.
INCH-POUND
MIL-PRF-19500/581A
10 September 1999
SUPERSEDING
MIL-S-19500/581
23 April 1990
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
TYPES 2N4237, 2N4238 AND 2N4239 JAN, JANTX AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (TO-39).
1.3 Maximum ratings. Unless otherwise specified, TA = +25
°
C.
Type
PT 1/
PT
VCBO
VCEO
VEBO
IC
IB
Top and TSTG
TA = +25
°
C TC = +25
°
C
1/
2/
W
2N4237
2N4238
2N4239
1.0
1.0
1.0
W
6.0
6.0
6.0
V dc
50
80
100
V dc
40
60
80
V dc
6.0
6.0
6.0
A dc
1.0
1.0
1.0
A dc
0.5
0.5
0.5
°
C
-65 to +200
-65 to +200
-65 to +200
1/ Derate linearly 5.7 mW/
°
C for TA > +25
°
C;
1/ Derate linearly 34 mW/
°
C for TC > +25
°
C;
1.4 Primary electrical characteristics at T
A
= +25
°
C.
Limits
h
FE
at VCE = 1.0 V dc 1/
h
FE1
h
FE2
h
FE3
I
C
= 100 mA dc I
C
= 250 mA dc I
C
= 500 mA dc
R
θ
JC
max
C
obo
f = 1.0 MHz
VCE = 10 V dc VCB = 10 V dc
IC = 100 mA dc
IC = 0
/h
fe
/
f = 10 MHz
VCE(sat)2 1/
IC = 1.0 A dc
IB = 0.1 A dc
VBE(sat)2 1/
IC = 1.0 A dc
IB = 0.1 A dc
°
C
Min
Max
30
30
150
30
29
3.0
pF
100
0.6
V dc
1.5
1 Pulsed see 4.5.1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
ETC [ ETC ]
