Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type TIP35/35A/35B/35C
・DC
current gain h
FE
=25(Min)@I
C
=-1.5A
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
TIP36/36A/36B/36C
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
TIP36
TIP36A
TIP36B
Collector-base voltage
Open emitter
TIP36C
TIP36
TIP36A
TIP36B
TIP36C
Collector-emitter voltage
Open base
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
PARAMETER
CONDITIONS
OR
CT
U
VALUE
-40
-60
-80
-100
-40
-60
UNIT
V
V
-80
-100
-5
-25
-40
-5
125
150
-65~150
V
A
A
A
W
℃
℃
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W
ETC [ ETC ]
