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产品型号IFCM10S60GD的Datasheet PDF文件预览

Control Integrated POwer System  
(CIPOS™)  
IFCM10S60GD  
Datasheet  
Datasheet  
Please read the Important Notice and Warnings at the end of this document  
page 1 of 18  
V 2.2  
www.infineon.com  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Table of contents  
Table of contents...................................................................................................................................................2  
CIPOSControl Integrated POwer System............................................................................................................3  
Features  
..................................................................................................................................................................3  
Target Applications......................................................................................................................................................3  
Description ..................................................................................................................................................................3  
System Configuration..................................................................................................................................................3  
Pin Configuration...................................................................................................................................................4  
Internal Electrical Schematic.................................................................................................................................4  
Pin Assignment ......................................................................................................................................................5  
Pin Description ......................................................................................................................................................5  
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12)............................................................5  
VFO (Fault-output and NTC, Pin 14) ............................................................................................................................6  
ITRIP (Over current detection function, Pin 15)..........................................................................................................6  
VDD, VSS (Low side control supply and reference, Pin 13, 16)...................................................................................6  
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) .............................................................................................6  
N (Low side emitter, Pin 17).........................................................................................................................................6  
W, V, U (High side emitter and low side collector, Pin 18 - 20) ...................................................................................6  
P (Positive bus input voltage, Pin 21)..........................................................................................................................6  
X, NX, GX (Single boost PFC, Pins 22-24) .....................................................................................................................6  
Absolute Maximum Ratings ...................................................................................................................................7  
Module Section ............................................................................................................................................................7  
Inverter Section............................................................................................................................................................7  
Control Section ............................................................................................................................................................7  
PFC Section ..................................................................................................................................................................8  
Recommended Operation Conditions ...................................................................................................................8  
Static Parameters ..................................................................................................................................................9  
Inverter Section............................................................................................................................................................9  
PFC Section ................................................................................................................................................................10  
Bootstrap Parameters .........................................................................................................................................10  
Dynamic Parameters ...........................................................................................................................................11  
Inverter Section..........................................................................................................................................................11  
PFC Section ................................................................................................................................................................12  
Thermistor...........................................................................................................................................................13  
Mechanical Characteristics and Ratings ..............................................................................................................13  
Circuit of a Typical Application ............................................................................................................................14  
Switching Times Definition ..................................................................................................................................15  
Package Outline...................................................................................................................................................16  
Revision history ...................................................................................................................................................17  
Datasheet  
2 of 18  
V 2.2  
2017-09-06  
 
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
CIPOS  
Control Integrated POwer System  
Dual In-Line PFC integrated Intelligent Power Module  
3ɸ-bridge 600V/10A, Single phase PFC 650V/30A  
Description  
Features  
Package  
The CIPOSmodule family offers the chance for  
Dual In-Line molded module  
Lead-free terminal plating; RoHS compliant  
Very low thermal resistance due to DCB  
integrating various power and control components  
to increase reliability, optimize PCB size and system  
costs.  
It is designed to control three phase AC motors and  
permanent magnet motors with single phase PFC in  
variable speed drives for applications like an air  
conditioning and low power motor drives. The  
package concept is specially adapted to power  
applications, which need good thermal conduction  
and electrical isolation, but also EMI-save control  
and overload protection.  
Inverter  
TRENCHSTOPIGBT3  
Rugged SOI gate driver technology with stability  
against transient and negative voltage  
Allowable negative VS potential up to -11V for  
signal transmission at VBS=15V  
Integrated bootstrap functionality  
Over current shutdown  
Temperature monitor  
Under-voltage lockout at all channels  
Low side common emitter  
TRENCHSTOPIGBT3 and anti-parallel diodes are  
combined with an optimized SOI gate driver for  
excellent electrical performance.  
System Configuration  
Cross-conduction prevention  
All of 6 switches turn off during protection  
3 half bridges with TRENCHSTOPIGBT3 and  
anti parallel diodes  
PFC  
3ɸ SOI gate driver  
TRENCHSTOPIGBT3  
Single phase PFC with TRENCHSTOPIGBT3  
and Rapid switching emitter controlled diode  
Rapid switching emitter controlled diode  
Thermistor  
Target Applications  
Home appliances  
Pin-to-heatsink clearance distance typ. 1.6mm  
Low power motor drives  
Datasheet  
3 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Pin Configuration  
Bottom View  
(24) GX  
(23) NX  
(22) X  
(21) P  
(20) U  
(19) V  
(1) VS(U)  
(2) VB(U)  
(3) VS(V)  
(4) VB(V)  
(5) VS(W)  
(6) VB(W)  
(7) HIN(U)  
(8) HIN(V)  
(9) HIN(W)  
(10) LIN(U)  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
(14) VFO  
(18) W  
(17) N  
(15) ITRIP  
(16) VSS  
Figure 1  
Pin configuration  
Internal Electrical Schematic  
GX (24)  
NX (23)  
(1) VS(U)  
(2) VB(U)  
VB1  
VB2  
RBS1  
X (22)  
P (21)  
HO1  
VS1  
(3) VS(V)  
(4) VB(V)  
RBS2  
HO2  
VS2  
(5) VS(W)  
(6) VB(W)  
VB3  
HO3  
U (20)  
RBS3  
VS3  
LO1  
(7) HIN(U)  
(8) HIN(V)  
HIN1  
HIN2  
V (19)  
W (18)  
N (17)  
(9) HIN(W)  
(10) LIN(U)  
HIN3  
LIN1  
LO2  
LO3  
(11) LIN(V)  
(12) LIN(W)  
(13) VDD  
(14) VFO  
LIN2  
LIN3  
VDD  
VFO  
(15) ITRIP  
(16) VSS  
ITRIP  
VSS  
Thermistor  
Figure 2  
Internal schematic  
Datasheet  
4 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Pin Assignment  
Pin Number  
Pin Name  
Pin Description  
U-phase high side floating IC supply offset voltage  
U-phase high side floating IC supply voltage  
V-phase high side floating IC supply offset voltage  
V-phase high side floating IC supply voltage  
W-phase high side floating IC supply offset voltage  
W-phase high side floating IC supply voltage  
U-phase high side gate driver input  
V-phase high side gate driver input  
W-phase high side gate driver input  
U-phase low side gate driver input  
V-phase low side gate driver input  
W-phase low side gate driver input  
Low side control supply  
1
VS(U)  
2
VB(U)  
VS(V)  
VB(V)  
VS(W)  
VB(W)  
HIN(U)  
HIN(V)  
HIN(W)  
LIN(U)  
LIN(V)  
LIN(W)  
VDD  
VFO  
ITRIP  
VSS  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Fault output / Temperature monitor  
Over current shutdown input  
Low side control negative supply  
Low side emitter  
N
W
Motor W-phase output  
V
Motor V-phase output  
U
Motor U-phase output  
P
Positive output voltage / Positive bus input voltage  
PFC IGBT collector  
X
NX  
PFC IGBT emitter  
GX  
PFC IGBT gate  
Pin Description  
HIN(U,V,W) and LIN(U,V,W) (Low side and high side  
control pins, Pin 7 - 12)  
These pins are positive logic and they are  
responsible for the control of the integrated IGBT.  
The Schmitt-trigger input thresholds of them are  
such to guarantee LSTTL and CMOS compatibility  
down to 3.3V controller outputs. Pull-down resistor  
of about 5kis internally provided to pre-bias  
inputs during supply start-up and a zener clamp is  
provided for pin protection purposes. Input  
Schmitt-trigger and noise filter provide beneficial  
noise rejection to short input pulses.  
CIPOS  
Schmitt-Trigger  
HINx  
LINx  
INPUT NOISE  
FILTER  
UZ=10.5V  
5k  
SWITCH LEVEL  
VIH; VIL  
VSS  
Figure 3  
Input pin structure  
a)  
b)  
tFILIN  
tFILIN  
HIN  
LIN  
HIN  
LIN  
high  
HO  
LO  
HO  
LO  
The noise filter suppresses control pulses which are  
below the filter time tFILIN. The filter acts according  
to Figure 4.  
low  
Figure 4  
Input filter timing diagram  
Datasheet  
5 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
It is recommended for proper work of this product  
not to provide input pulse-width lower than 1us.  
The under-voltage circuit enables the device to  
operate at power on when a supply voltage of at  
least a typical voltage of VDDUV+ = 12.1V is present.  
The IC shuts down all the gate driverspower  
outputs, when the VDD supply voltage is below  
VDDUV- = 10.4V. This prevents the external power  
switches from critically low gate voltage levels  
during on-state and therefore from excessive power  
dissipation.  
The integrated gate drive provides additionally a  
shoot through prevention capability which avoids  
the simultaneous on-state of two gate drivers of the  
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and  
LO3). When two inputs of a same leg are activated,  
only former activated one is activated so that the  
leg is kept steadily in a safe state.  
A minimum deadtime insertion of typically 380ns is  
also provided by driver IC, in order to reduce cross-  
conduction of the external power switches.  
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 -  
6)  
VB to VS is the high side supply voltage. The high  
side circuit can float with respect to VSS following  
the external high side power device emitter voltage.  
Due to the low power consumption, the floating  
driver stage is supplied by integrated bootstrap  
circuit.  
VFO (Fault-output and NTC, Pin 14)  
The VFO pin indicates a module failure in case of  
under voltage at pin VDD or in case of triggered  
over current detection at ITRIP. A pull-up resistor is  
externally required to bias the NTC.  
The under-voltage detection operates with a rising  
supply threshold of typical VBSUV+ = 12.1V and a  
falling threshold of VBSUV- = 10.4V.  
CIPOS  
VDD  
VFO  
RON,FLT  
From ITRIP - Latch  
VS(U,V,W) provide a high robustness against  
negative voltage in respect of VSS of -50V  
transiently. This ensures very stable designs even  
under rough conditions.  
1
VSS  
From UV detection  
Thermistor  
Figure 5  
Internal circuit at pin VFO  
N (Low side emitter, Pin 17)  
The same pin provides direct access to the NTC,  
which is referenced to VSS. An external pull-up  
resistor connected to +5V ensures that the resulting  
voltage can be directly connected to the  
microcontroller.  
The low side emitters are available for current  
measurements. It is recommended to keep the  
connection to pin VSS as short as possible in order  
to avoid unnecessary inductive voltage drops.  
W, V, U (High side emitter and low side collector,  
Pin 18 - 20)  
ITRIP (Over current detection function, Pin 15)  
CIPOSprovides an over current detection  
These pins are motor U, V, W input pins  
function by connecting the ITRIP input with the  
motor current feedback. The ITRIP comparator  
threshold (typ. 0.47V) is referenced to VSS ground.  
An input noise filter (typ: tITRIPMIN = 530ns) prevents  
the driver to detect false over-current events.  
Over current detection generates a shut down of all  
outputs of the gate driver after the shutdown  
propagation delay of typically 1000ns.  
P (Positive bus input voltage, Pin 21)  
The high side IGBTs and PFC diode cathode are  
connected to the bus voltage. It is noted that the  
bus voltage does not exceed 450V.  
X, NX, GX (Single boost PFC, Pins 22-24)  
These pins are emitter, collector and gate of IGBT  
for single boost PFC.  
VDD, VSS (Low side control supply and reference,  
Pin 13, 16)  
VDD is the low side supply and it provides power  
both to input logic and to low side output power  
stage. Input logic is referenced to VSS ground.  
Datasheet  
6 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Absolute Maximum Ratings  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
Module Section  
Value  
Description  
Condition  
Symbol  
Unit  
min  
-40  
max  
125  
-
Storage temperature range  
Isolation test voltage  
Tstg  
VISOL  
TC  
°C  
V
RMS, f = 60Hz, t =1min  
Refer to Figure 6  
2000  
-40  
Operating case temperature range  
125  
°C  
Inverter Section  
Value  
Description  
Condition  
Symbol  
Unit  
min  
max  
-
Max. blocking voltage  
IC = 250µA  
VCES  
VPN  
600  
V
V
DC link supply voltage of P-N  
DC link supply voltage (surge) of P-N  
Output current  
Applied between P-N  
Applied between P-N  
TC = 25°C , TJ < 150°C  
less than 1ms  
-
-
450  
500  
10  
VPN(surge)  
IC  
IC(peak)  
tSC  
V
-10  
-20  
-
A
Maximum peak output current  
Short circuit withstand time1  
Power dissipation per IGBT  
20  
A
VDC 400V, TJ = 150°C  
5
µs  
W
Ptot  
-
39.3  
Operating junction temperature  
range  
TJ  
-40  
150  
3.18  
4.67  
°C  
Single IGBT thermal resistance,  
junction-case  
RthJC  
RthJCD  
-
-
K/W  
K/W  
Single diode thermal resistance,  
junction-case  
Control Section  
Value  
Description  
Condition  
Symbol  
Unit  
min  
-1  
max  
20  
Module supply voltage  
VDD  
VBS  
V
V
High side floating supply voltage (VB vs. VS)  
-1  
20  
VIN  
VITRIP  
-1  
-1  
10  
10  
Input voltage  
LIN, HIN, ITRIP  
V
Inverter switching frequency  
PFC switching frequency  
fPWM  
-
-
20  
40  
kHz  
kHz  
fPWM(PFC)  
1 Allowed number of short circuits: <1000; time between short circuits: > 1s.  
Datasheet  
7 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
PFC Section  
(VGE = 15V and TJ = 25°C, if not stated otherwise)  
Value  
Description  
Condition  
IC = 250µA  
Symbol  
Unit  
min  
650  
650  
-20  
-
max  
-
Max. blocking voltage  
Repetitive peak reverse voltage  
Gate-emitter voltage  
VCES  
VRRM  
VGE  
Ii  
V
V
V
A
IR = 250µA  
-
20  
30  
Input RMS current  
TJ 150°C , TC = 25°C  
TJ 150°C , TC = 25°C  
less than 1ms, non-  
repetitive  
Maximum peak input current  
Ii(peak)  
-
60  
A
Short circuit withstand time1  
Power dissipation  
VDC 400V, TJ = 150°C  
tSC  
-
-
5
µs  
W
Ptot  
105.9  
Operating junction temperature  
range  
TJ  
-40  
150  
1.18  
2.76  
°C  
Single IGBT thermal resistance,  
junction-case  
RthJC  
RthJCD  
-
-
K/W  
K/W  
Single diode thermal resistance,  
junction-case  
Recommended Operation Conditions  
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.  
Value  
Description  
DC link supply voltage of P-N  
Symbol  
Unit  
min  
0
typ  
-
max  
450  
VPN  
VBS  
VDD  
V
V
V
High side floating supply voltage (VB vs. VS)  
Low side supply voltage  
13.5  
14.5  
-
18.5  
18.5  
16  
ΔVBS,  
ΔVDD  
-1  
-1  
1
1
Control supply variation  
-
-
V/µs  
V
VIN  
VITRIP  
0
0
5
5
Logic input voltages LIN,HIN,ITRIP  
Between VSS - N and NX(including surge)  
PFC IGBT gate-emitter voltage  
VSS  
VGE  
RG  
-5  
14  
-
-
5
18  
-
V
V
-
10  
4.7  
10  
Ω
PFC IGBT external gate parameters  
CGE  
RGE  
-
-
nF  
kΩ  
-
-
1 Allowed number of short circuits: <1000; time between short circuits: > 1s.  
Datasheet  
8 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Static Parameters  
Inverter Section  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
Value  
typ  
Description  
Condition  
Symbol  
VCE(sat)  
Unit  
V
min  
max  
IC = 6A  
Collector-Emitter saturation voltage  
-
-
1.55  
1.85  
2.05  
-
TJ = 25°C  
150°C  
IF = 6A  
Emitter-Collector forward voltage  
VF  
-
-
1.65  
1.55  
2.0  
-
V
TJ = 25°C  
150°C  
Collector-Emitter leakage current  
Logic "1" input voltage (LIN,HIN)  
Logic "0" input voltage (LIN,HIN)  
ITRIP positive going threshold  
ITRIP input hysteresis  
VCE = 600V  
ICES  
VIH  
-
-
1
2.5  
-
mA  
V
-
2.1  
0.9  
470  
70  
VIL  
0.7  
400  
40  
V
VIT,TH+  
VIT,HYS  
540  
-
mV  
mV  
VDD and VBS supply under voltage  
positive going threshold  
VDDUV+  
VBSUV+  
10.8  
9.5  
1.0  
-
12.1  
10.4  
1.7  
13.0  
11.2  
-
V
V
VDD and VBS supply under voltage  
negative going threshold  
VDDUV-  
VBSUV-  
VDD and VBS supply under voltage  
lockout hysteresis  
VDDUVH  
VBSUVH  
V
Quiescent VBx supply current  
(VBx only)  
HIN = 0V  
IQBS  
IQDD  
300  
370  
500  
900  
µA  
µA  
Quiescent VDD supply current  
(VDD only)  
LIN = 0V, HINX=5V  
-
Input bias current  
VIN = 5V  
IIN+  
IIN-  
-
-
-
-
-
1
2
1.5  
mA  
µA  
µA  
µA  
V
Input bias current  
VIN = 0V  
-
ITRIP input bias current  
VFO input bias current  
VFO output voltage  
VITRIP = 5V  
IITRIP+  
IFO  
65  
60  
0.5  
150  
VFO = 5V, VITRIP = 0V  
IFO = 10mA, VITRIP = 1V  
-
-
VFO  
Datasheet  
9 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
PFC Section  
(VGE = 15V and TJ = 25°C, if not stated otherwise)  
Value  
typ  
Description  
Condition  
IC = 30A,  
TJ = 25°C  
150°C  
Symbol  
VCE(sat)  
Unit  
V
min  
max  
Collector-Emitter saturation  
voltage  
-
-
2.0  
2.55  
2.4  
-
IF = 30A,  
Diode forward voltage  
VF  
-
-
1.75  
1.65  
2.3  
-
V
TJ = 25°C  
150°C  
Gate-Emitter threshold voltage  
Collector-Emitter leakage current  
Gate-Emitter leakage current  
Diode reverse leakage current  
IC = 0.43mA, VGE=VCE  
VCE = 650V, VGE = 0V  
VCE = 0V, VGE = 20V  
VR = 650V  
VGE(th)  
ICES  
IGES  
IR  
4.1  
5.1  
5.7  
1
V
-
-
-
-
-
-
mA  
µA  
mA  
1
1
Bootstrap Parameters  
(TJ = 25°C, if not stated otherwise)  
Value  
typ  
-
Description  
Condition  
Symbol  
Unit  
min  
600  
max  
-
Repetitive peak reverse voltage  
Bootstrap diode resistance  
VRRM  
RBSD  
V
Between VF=4V and  
VF=5V  
-
40  
-
Reverse recovery time  
IF = 0.6A, di/dt=80A/µs  
IF = 0.5mA  
trr_BSD  
VF_BSD  
-
-
50  
1
-
-
ns  
Bootstrap diode forward voltage  
V
Datasheet  
10 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Dynamic Parameters  
Inverter Section  
(VDD = 15V and TJ = 25°C, if not stated otherwise)  
Value  
typ  
640  
15  
Description  
Condition  
Symbol  
Unit  
min  
max  
Turn-on propagation delay time  
Turn-on rise time  
ton  
tr  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
VLIN,HIN = 5V,  
IC = 6A,  
Turn-on switching time  
Reverse recovery time  
Turn-off propagation delay time  
Turn-off fall time  
tc(on)  
trr  
130  
95  
VDC = 300V  
toff  
tf  
870  
80  
VLIN,HIN = 0V,  
IC = 6A,  
VDC = 300V  
Turn-off switching time  
tc(off)  
135  
Short circuit propagation delay  
time  
From VIT,TH+ to 10% ISC  
VITRIP = 1V  
tSCP  
tITRIPmin  
tFILIN  
-
-
1300  
530  
290  
-
-
-
-
-
-
-
ns  
ns  
ns  
µs  
µs  
ns  
Input filter time ITRIP  
Input filter time at LIN, HIN for turn  
on and off  
VLIN,HIN = 0V & 5V  
VITRIP = 1V  
-
Fault clear time after ITRIP-fault  
tFLTCLR  
DTPWM  
DTIC  
40  
1.0  
-
Deadtime between low side and  
high side  
-
Deadtime of gate drive circuit  
380  
VDC = 300V, IC = 6A  
TJ = 25°C  
150°C  
IGBT turn-on energy (includes  
reverse recovery of diode)  
Eon  
Eoff  
Erec  
-
-
140  
175  
-
-
µJ  
µJ  
µJ  
VDC = 300V, IC = 6A  
TJ = 25°C  
150°C  
IGBT turn-off energy  
-
-
110  
140  
-
-
VDC = 300V, IC = 6A  
TJ = 25°C  
150°C  
Diode recovery energy  
-
-
25  
40  
-
-
Datasheet  
11 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
PFC Section  
(VGE = 15V and TJ = 25°C, if not stated otherwise)  
Value  
typ  
Description  
Input capacitance  
Condition  
Symbol  
Unit  
min  
max  
Cies  
Coes  
Cres  
-
-
-
1900  
107  
-
-
-
VCE = 25V, VGE = 0V,  
f = 1MHz  
Output capacitance  
pF  
nC  
Reverse transfer capacitance  
55  
VDC = 520V, IC = 30A,  
VGE = 15V  
Gate charge  
QG  
-
165  
-
Turn-on delay time  
Turn-on rise time  
Turn-off delay time  
Turn-off fall time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
20  
90  
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
VDC = 400V, IC = 30A,  
RG = 10, CGE = 4.7nF,  
RGE = 10k, TJ = 25°C  
205  
30  
Reverse recovery time  
trr  
100  
VDC = 400V, IC = 30A, RG = 10,  
CGE = 4.7nF, RGE = 10kΩ  
TJ = 25°C  
150°C  
Turn-on energy  
Eon  
Eoff  
Erec  
-
-
1540  
2025  
-
-
µJ  
µJ  
µJ  
VDC = 400V, IC = 30A, RG = 10,  
CGE = 4.7nF, RGE = 10kΩ  
TJ = 25°C  
150°C  
Turn-off energy  
-
-
510  
600  
-
-
VDC = 400V, IC = 30A, RG = 10,  
CGE = 4.7nF, RGE = 10kΩ  
TJ = 25°C  
150°C  
Diode recovery energy  
-
-
50  
120  
-
-
Figure 6  
TC measurement point1  
1 Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and  
brings wrong or different information.  
Datasheet  
12 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Thermistor  
Value  
typ  
Description  
Condition  
TNTC = 25°C  
Symbol  
Unit  
min  
-
max  
-
Resistor  
RNTC  
85  
k  
B-constant of NTC  
(Negative temperature coefficient)  
B(25/100)  
-
4092  
-
K
3500  
35  
Min.  
Typ.  
Max.  
3000  
2500  
2000  
1500  
1000  
500  
30  
25  
20  
15  
10  
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130  
Thermistor temperature []  
0
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
Thermistor temperature []  
Figure 7  
Thermistor resistance temperature curve and table  
(For more information, please refer to the application note AN CIPOS-Mini 1 Technical description)  
Mechanical Characteristics and Ratings  
Value  
Description  
Condition  
Unit  
min  
0.49  
-50  
-
typ  
max  
Mounting torque  
M3 screw and washer  
Refer to Figure 8  
-
-
0.78  
100  
-
Nm  
µm  
g
Flatness  
Weight  
6.83  
Figure 8  
Flatness measurement position  
Datasheet  
13 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Circuit of a Typical Application  
#1  
RG  
PFC  
gate  
driver  
IC  
GX (24)  
NX (23)  
X (22)  
VDD line  
RGE  
CGE  
#4  
(1) VS(U)  
(2) VB(U)  
VB1  
#8  
#7  
RBS1  
HO1  
VS1  
#4  
(3) VS(V)  
(4) VB(V)  
VB2  
P (21)  
RBS2  
HO2  
VS2  
#4  
(5) VS(W)  
(6) VB(W)  
VB3  
~
AC  
HO3  
VS3  
U (20)  
RBS3  
#1  
(7) HIN(U)  
HIN1  
#5  
(8) HIN(V)  
Micro  
Controller  
HIN2  
LO1  
LO2  
(9) HIN(W)  
V (19)  
W (18)  
N (17)  
3-ph AC  
Motor  
HIN3  
(10) LIN(U)  
LIN1  
(11) LIN(V)  
LIN2  
(12) LIN(W)  
LIN3  
(13) VDD  
VDD  
#9  
VDD line  
(14) VFO  
VFO  
(15) ITRIP  
ITRIP  
LO3  
(16) VSS  
5 or 3.3V line  
VSS  
#6  
#3  
#7  
<Signal for protection>  
#2  
Current sensing  
Input surge voltage sensing  
<Signal for protection>  
Figure 9  
Application circuit  
Because PFC IGBT inside this product has very high speed switching characteristics, considerable large surge voltage  
between P and NX terminals and switching noise on signaling path are generated easily. Please pay attention to the below  
items for optimized application circuit design.  
1.  
Input circuit  
-
-
To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF)  
CIN should be placed as close to VSS pin as possible.  
2.  
3.  
Itrip circuit  
-
To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.  
VFO circuit  
-
VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic power supply with a proper  
resistor RPU. It is recommended that RC filter be placed as close to the controller as possible.  
4.  
5.  
VB-VS circuit  
-
Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.  
Snubber capacitor  
-
The wiring between CIPOSMini and snubber capacitor including shunt resistor should be as short as possible.  
6.  
7.  
Shunt resistor  
-
Each shunt resistor of SMD type should be used for reducing its stray inductance.  
Ground pattern  
-
Each ground pattern should be separated at only one point of shunt resistor as short as possible.  
-
Power ground pattern between PFC and Inverter should be connected as short as possible.  
8.  
9.  
Anti parallel diode  
-
It’s mandatory to connect anti-parallel diode (2A, voltage rating higher than 650V) to PFC IGBT.  
Input surge voltage protection circuit  
-
This protection circuit is necessary for PFC IGBT to be protected from excessive surge voltage.  
Datasheet  
14 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Switching Times Definition  
2.1V  
HINx  
LINx  
0.9V  
trr  
toff  
ton  
10%  
10%  
iCx  
90%  
90%  
tf  
tr  
10%  
10%  
10%  
vCEx  
tc(on)  
tc(off)  
Figure 10 Switching times definition of inverter  
90%  
vGE  
10%  
trr  
td(off)  
td(on)  
10%  
iC  
90%  
90%  
tr  
10%  
10%  
vCE  
tf  
Figure 11 Switching times definition of PFC  
Datasheet  
15 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Package Outline  
Datasheet  
16 of 18  
V 2.2  
2017-09-06  
Control Integrated POwer System (CIPOS™)  
IFCM10S60GD  
Revision history  
Document  
version  
Date of release  
Aug. 2017  
Description of changes  
V 2.1  
Package outline update  
Fig.9 Application circuit  
V 2.2  
Sep. 2017  
Maximum operating case temperature, Tc= 125°C  
Datasheet  
17 of 18  
V 2.2  
2017-09-06  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
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Edition 2017-09-06  
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please  
Published by  
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contact your nearest Infineon Technologies office  
(www.infineon.com).  
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81726 München, Germany  
With respect to any examples, hints or any typical  
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