IRF3710现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号IRF3710的概述

IRF3710 芯片概述 IRF3710是一款具有高性能的N沟道功率MOSFET，广泛应用于电源管理、转换器及电动机驱动等领域。这款芯片具有较低的导通电阻和较高的开关速度，这使其特别适合于高频、高效率的电源应用。在许多现代电子设备中，IRF3710的重点是其强大的电流处理能力和优越的热管理特性。 IRF3710 的详细参数以下是IRF3710的一些关键电气参数： 1. 额定电压：最大漏极至源极电压（V_DS）为30V。 2. 额定电流：在特定条件下，连续漏电流（I_D）可达60A。 3. 导通电阻：在V_GS = 10V时，R_DS(on)最大可达0.015Ω。 4. 输入电容（C_iss）：约为1400 pF。 5. 输出电容（C_oss）：约为250 pF。 6. 反向恢复时间（t_rr）：相对较短的恢复时间，使其在开关频率较高的应用中表现良好。 7. 工作温度范围：通常在-55...

产品型号IRF3710的Datasheet PDF文件预览

PD - 91309A

IRF3710

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 100V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 23mΩ

l Fully Avalanche Rated

I_D= 57A

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermalresistanceandlowpackagecostoftheTO-220contributetoitswide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

230

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.8

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

01/17/02

IRF3710

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

100 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, I_D= 1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

––– ––– 23

mΩ V_GS= 10V, I_D=28A

2.0

––– 4.0

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 28A

V_DS= 100V, V_GS= 0V

V_DS= 80V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Forward Transconductance

––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 130

––– ––– 26

––– ––– 43

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= 28A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= 80V

V_GS= 10V, See Fig. 6 and 13

–––

12 –––

58 –––

45 –––

47 –––

V_DD= 50V

I_D= 28A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 2.5Ω

V_GS= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

7.5

C_iss

C_oss

C_rss

E_AS

Input Capacitance

––– 3130 –––

––– 410 –––

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

Single Pulse Avalanche Energy

–––

72 –––

ƒ = 1.0MHz, See Fig. 5

––– 1060ꢀ280 mJ I_AS= 28A, L = 0.70mH

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

230

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– ––– 1.2

––– 140 220

T_J= 25°C, I_S= 28A, V_GS= 0V

T_J= 25°C, I_F= 28A

Q_rr

t_on

––– 670 1010 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

I_SD≤ 28A, di/dt ≤ 380A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Starting T_J= 25°C, L = 0.70mH

ꢀThis is a typical value at device destruction and represents

operation outside rated limits.

R_G= 25Ω, I_AS= 28A, V_GS=10V (See Figure 12)

This is a calculated value limited to T_J= 175°C .

www.irf.com

IRF3710

1000

100

1000

100

VGS

16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

VGS

16V

10V

7.0V

6.0V

5.0V

4.5V

4.0V

TOP

BOTTOM 3.5V

3.5V

20µs PULSE WIDTH

Tj = 25°C

20µs PULSE WIDTH

Tj = 175°C

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

3.0

1000.00

57A

2.5

2.0

1.5

1.0

0.5

0.0

100.00

10.00

1.00

= 175°C

= 25°C

= 15V

20µs PULSE WIDTH

= 10V

0.10

-60 -40 -20

80 100 120 140 160 180

3.0

4.0

5.0

6.0

7.0

8.0

9.0

T , Junction Temperature

( C)

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

IRF3710

100000

10000

1000

= 28A

= 0V,

f = 1 MHZ

80V

50V

20V

= C + C

SHORTED

iss

= C

rss

= C + C

ds gd

oss

Ciss

Coss

Crss

100

, Drain-to-Source Voltage (V)

100

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000.00

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100.00

10.00

1.00

= 175°C

100µsec

1msec

= 25°C

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.10

0.1

0.0

0.5

1.0

1.5

2.0

100

1000

, Source-toDrain Voltage (V)

, Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

IRF3710

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

V_GS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

100

125

150

175

( C)

, Case Temperature

10%

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.1

0.05

SINGLE PULSE

(THERMAL RESPONSE)

0.02

0.01

Notes:

1. Duty factor D =

t / t

2. Peak T

= P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

IRF3710

550

440

330

220

110

15V

TOP

11A

20A

28A

BOTTOM

DR IVER

D S

D .U .T

A S

D D

V0_GV_S

0.0 1

Ω

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

( C)

Starting T , Junction Temperature

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

V_GS

D.U.T.

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRF3710

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET^®power MOSFETs

www.irf.com

IRF3710

Package Outline

TO-220AB

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

MIN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IMENSIONING

TOLERANCING PER ANSI Y14.5M, 1982.

OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD MEASUREMENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIMENSION : INCH

Part Marking Information

TO-220AB

EXAMPLE: THIS IS AN IRF1010

LOT CODE 1789

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLYLINE "C"

DATE CODE

YEAR 7 = 1997

WE E K 19

ASSEMBLY

LOT CODE

LINE C

Data and specifications subject to change without notice.

This product has been designed and qualified for the Automotive [Q101] market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.01/02

www.irf.com

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IRF3710产品参数

型号:	IRF3710
是否无铅：	含铅
是否Rohs认证：	不符合
生命周期：	Transferred
零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.07
其他特性：	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：	280 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	46 A
最大漏极电流 (ID)：	57 A
最大漏源导通电阻：	0.023 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	225
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W
最大脉冲漏极电流 (IDM)：	230 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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