IRF5210现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号IRF5210的概述

芯片IRF5210的概述 IRF5210是一种高功率N沟道MOSFET，相较于传统的双极型晶体管，MOSFET器件在开关速度、热效率和电流承载能力方面具有显著优势。随着电子设备的不断发展，特别是在电源管理、马达驱动和高频开关应用等领域，MOSFET的应用越来越广泛。IRF5210凭借其优越的电气性能和可靠性，成为市场上受欢迎的选择之一。芯片IRF5210的详细参数 IRF5210的主要参数包括： - 最大漏极电压(Vds): 55V - 最大持续漏极电流(Id): 100A - 最大脉冲漏极电流(Id_pulse): 160A - 栅源阈值电压(Vgs(th)): 2V 至 4V - 栅源击穿电压(Vgs): ±20V - 引脚热阻(RθJC): 0.5°C/W - 导通电阻(Rds(on)): 0.04Ω（在Vgs = 10V时） - 工作温度范围: -55°C 至 171°C -...

产品型号IRF5210的Datasheet PDF文件预览

PD - 91434A

IRF5210

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -100V

R_DS(on)= 0.06Ω

I_D= -40A

l P-Channel

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levelstoapproximately50watts. Thelowthermalresistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-40

-29

-140

200

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

1.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

780

-21

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.75

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

5/13/98

IRF5210

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-100 ––– –––

Conditions

V_GS= 0V, I_D= -250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, I_D= -1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance ––– ––– 0.06

Ω

V_GS= -10V, I_D= -24A

V_DS= V_GS, I_D= -250µA

V_DS= -50V, I_D= -21A

V_DS= -100V, V_GS= 0V

V_DS= -80V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

-2.0 ––– -4.0

10 ––– –––

Forward Transconductance

––– ––– -25

––– ––– -250

––– ––– 100

––– ––– -100

––– ––– 180

––– ––– 25

––– ––– 97

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= -21A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= -80V

V_GS= -10V, See Fig. 6 and 13

–––

17 –––

86 –––

79 –––

81 –––

V_DD= -50V

RiseTime

I_D= -21A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 2.5Ω

R_D= 2.4Ω, See Fig. 10

Between lead,

6mm (0.25in.)

4.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

from package

7.5

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 2700 –––

––– 790 –––

––– 450 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-40

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– -140

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– -1.6

––– 170 260

––– 1.2 1.8

T_J= 25°C, I_S= -21A, V_GS= 0V

T_J= 25°C, I_F= -21A

Q_rr

t_on

µC di/dt = -100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

V_DD= -25V, starting T_J= 25°C, L = 3.5mH

R_G= 25Ω, I_AS= -21A. (See Figure 12)

I_SD≤ -21A, di/dt ≤ -480A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%.

IRF5210

1000

100

1000

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

BOT TOM - 4.5V

-4.5V

40µs PULSE W IDTH

= 175°C

= 25°C

100

0.1

100

-V

, Drain-to-Source Voltage (V)

-V

D S

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= -35A

100

T_J= 25 °C

T_J= 1 7 5 °C

V _{D S}= -5 0 V

4 0 µs P UL S E W ID TH

= -10V

G S

₁₀A

-60 -40 -20

80 100 120 140 160 180

-V

, G ate-to -Sou rce Voltage (V)

, Junction Tem perature (°C)

G S

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

IRF5210

6000

= -21A

= 0V ,

f = 1M Hz

G S

iss

= C

+ C

SHORTE D

= -80V

= -50V

= -20V

rss

oss

5000

iss

4000

oss

rss

3000

2000

1000

FO R TEST CIRCUIT

SEE FIGURE 13

120 160

200

100

-V

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1000

100

1000

100

OPE RATION IN THIS AREA LIM ITE D

BY R

DS(on)

10µs

= 175°C

100µs

= 25°C

1m s

10m s

= 25°C

= 175°C

Single Pulse

= 0V

G S

0.4

0.8

1.2

1.6

2.0

2.4

100

1000

-V

, Drain-to-Source Voltage (V)

-V

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

IRF5210

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

175

, Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Case Temperature

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF5210

D S

2000

1600

1200

800

400

TOP

-8.6A

-15A

-21A

D .U .T

D D

BO TTO M

A S

D R IV ER

-20V

0.0 1

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

175

100

125

150

Starting T , Junction Tem perature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

IRF5210

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF5210

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

M IN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IM ENSIONING

TOLERANCING PER ANSI Y14.5M , 1982.

OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIM ENSION : INCH

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IR F1010

EXAM PLE : TH IS IS AN IRF1010

W ITH ASSEM BLY

LOT C ODE 9B1M

LOT CO DE 9B1M

INTERNATIONAL

INTERN ATION AL

PART NU M BER

RECTIFIER

R EC TIFIER

IR F1010

IRF1010

LOGO

9246

D ATE COD E

ASSEMBLY

(YYW W )

LOT

CO DE

L OT COD E

YEAR

= YEAR

W W

= W EEK

W W W EEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/98

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