| 品牌 |
型号 |
描述和应用 |
下载 |
货源 |
INTERSIL
|
irf630
|
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs
9A ， 200V ， 0.400 Ohm的N通道功率MOSFET |
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INFINEON
|
irf630
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Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
功率MOSFET （ VDSS = 200V ， RDS（ON） = 0.40ohm ，ID = 9.0A ） |
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FAIRCHILD
|
irf630
|
N-Channel Power MOSFETs, 12A, 150-200 V
N沟道功率MOSFET ， 12A ， 150至200 V |
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STMICROELECTRONICS
|
irf630
|
N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
N - CHANNEL 200V - 0.35ihm - 9A - TO- 220 / FP MESH合成] MOSFET |
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NXP
|
irf630
|
N-channel TrenchMOS transistor
N沟道晶体管的TrenchMOS
晶体晶体管功率场效应晶体管 |
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TRSYS
|
irf630
|
Power MOSFET
功率MOSFET |
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VISHAY
|
irf630
|
Power MOSFET
功率MOSFET |
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ISC
|
irf630
|
N-channel mosfet transistor
N沟道场效应晶体管的晶体管
晶体晶体管场效应晶体管 |
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DCCOM
|
irf630
|
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
N沟道功率MOSFET技术规格 |
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A-POWER
|
irf630
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET |
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SUNTAC
|
irf630
|
POWER MOSFET
功率MOSFET |
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COMSET
|
irf630
|
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N沟道增强型功率MOS晶体管
晶体晶体管 |
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KERSEMI
|
irf630
|
Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated
功率MOSFET动态的dv / dt额定值额定重复性雪崩 |
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SAMSUNG
|
irf630
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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INFINEON
|
irf630-001
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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INFINEON
|
irf630-001PBF
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
局域网开关脉冲晶体管 |
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VISHAY
|
irf630-010PBF
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
局域网开关脉冲晶体管 |
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VISHAY
|
irf630-012PBF
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
局域网开关脉冲晶体管 |
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FAIRCHILD
|
irf630A
|
Advanced Power MOSFET
先进的功率MOSFET |
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ISC
|
irf630A
|
isc N-Channel MOSFET Transistor
ISC N沟道MOSFET晶体管
晶体晶体管 |
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MOTOROLA
|
irf630A
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
局域网脉冲晶体管 |
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MOTOROLA
|
irf630A16A
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
局域网晶体管 |
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MOTOROLA
|
irf630AF
|
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
局域网晶体管 |
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MOTOROLA
|
irf630AJ
|
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
局域网晶体管 |
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|
FAIRCHILD
|
irf630AJ69Z
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
局域网开关脉冲晶体管 |
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FAIRCHILD
|
irf630B
|
200V N-Channel MOSFET
200V N沟道MOSFET |
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ISC
|
irf630B
|
isc N-Channel MOSFET Transistor
ISC N沟道MOSFET晶体管
晶体晶体管 |
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NJSEMI
|
irf630B
|
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220 |
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MOTOROLA
|
irf630C
|
9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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MOTOROLA
|
irf630D1
|
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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