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产品型号IRF7304TR的概述

芯片IRF7304TR的概述 IRF7304TR是一款高效能n沟道功率MOSFET，适用于各种电子电路应用，尤其是在开关电源、直流到直流转换器、和电机驱动等领域。这款MOSFET具有较低的导通电阻和较快的开关速度，使其在高频率和高功率的应用中表现出色。IRF7304TR凭借其优良的电气特性和可靠性，已成为电子工程师和设计师的常用器件之一。芯片IRF7304TR的详细参数 IRF7304TR的主要电气参数如下： - 最大漏极-源极电压 (V_DS): 40V - 连续漏极电流 (I_D): 70A - 脉冲漏极电流 (I_D,pulse): 120A - 最大功耗 (P_D): 94W（在25°C时） - 漏极-源极击穿电压 (V(BR)DSS): ≥40V - 导通电阻 (R_DS(on)): 最大值为0.035Ω（在V_GS=10V时） - 栅极阈值电压 (V_GS(th)): 2...

产品型号IRF7304TR的Datasheet PDF文件预览

PD - 9.1240C

IRF7304

HEXFET^®Power MOSFET

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel Mosfet

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

S 1

G 1

D 1

V_DSS= -20V

S 2

G 2

D 2

_DS(on)= 0.090Ω

Top View

Description

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combinedwiththefastswitchingspeedandruggedizeddevicedesignthat

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in an

application with dramatically reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques. Power dissipation of greater

than 0.8W is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ -4.5V

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

-4.7

-4.3

-3.4

-17

W/°C

P_D@T_A= 25°C

Power Dissipation

2.0

Linear Derating Factor

0.016

±12

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

-5.0

V/ns

°C

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

8/25/97

IRF7304

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-20 ––– –––

––– -0.012 ––– V/°C Reference to 25°C, I_D= -1mA

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, ID = -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

––– ––– 0.090

––– ––– 0.140

-0.70 ––– –––

4.0 ––– –––

––– ––– -1.0

––– ––– -25

––– ––– -100

––– ––– 100

––– ––– 22

––– ––– 3.3

––– ––– 9.0

––– 8.4 –––

––– 26 –––

––– 51 –––

––– 33 –––

V_GS= -4.5V, I_D= -2.2A

V_GS= -2.7V, I_D= -1.8A

V_DS= V_GS, I_D= -250µA

V_DS= -16V, I_D= -2.2A

V_DS= -16V, V_GS= 0V

V_DS= -16V, V_GS= 0V, T_J= 125°C

V_GS= -12V

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

µA

I_DSS

I_GSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= 12V

Q_g

I_D= -2.2A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

nC V_DS= -16V

V_GS= -4.5V, See Fig. 6 and 12

V_DD= -10V

RiseTime

I_D= -2.2A

t_d(off)

t_f

Turn-Off Delay Time

FallTime

R_G= 6.0Ω

R_D= 4.5Ω, See Fig. 10

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

––– 4.0 –––

––– 6.0 –––

Between lead tip

and center of die contact

C_iss

C_oss

C_rss

Input Capacitance

––– 610 –––

––– 310 –––

––– 170 –––

V_GS= 0V

Output Capacitance

V_DS= -15V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

––– ––– -2.5

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– -17

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– -1.0

––– 56 84

––– 71 110

T_J= 25°C, I_S= -1.8A, V_GS= 0V

T_J= 25°C, I_F= -2.2A

Q_rr

t_on

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width ≤ 300µs; duty cycle ≤ 2%.

_SD≤ -2.2A, di/dt ≤− 50A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

IRF7304

1 0 0

1 0

1 0 0

1 0

VGS

7.5V

VGS

- 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

TOP

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

BOTTOM - 1.5V

-1.5V

20µs PULSE WIDTH

= 25°C

= 150°C

1 0 0

0. 1

0 . 0 1

0. 1

1 0

0 . 0 1

0. 1

1 0

1 0 0

-V

, Drain-to-Source Voltage (V)

-V

, Drain-to-Source Voltage (V)

D S

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1 0 0

1 0

2. 0

1. 5

1. 0

0. 5

0. 0

= -3.6A

= 25°C

= 150°C

= -15 V

20µs P ULS E W ID TH

D S

= -4.5V

0. 1

_{5. 0}A

1. 5

2. 0

2. 5

3. 0

3. 5

4. 0

4. 5

- 6 0

- 4 0

- 2 0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0

T_J, Junction Tem perature (°C)

-V_{G S}, Ga te-to-So urce Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF7304

1 5 0 0

1 0

= 0V,

f = 1MHz

= -2.2A

= -16V

= C

+ C

d s

SHORTE D

iss

rss

oss

is s

1 0 0 0

o s s

r ss

5 0 0

FOR TES T CIRCUIT

SEE FIGURE 12

1 0

1 0 0

1 0

1 5

2 0

2 5

-V_{D S}, Drain-to-Source Voltage (V)

Q _G, Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

1 0 0

1 0

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

= 150°C

= 25°C

1ms

10ms

T = 25 C

T = 150 C

= 0V

Single Pulse

0. 1

0. 3

0. 6

0. 9

1. 2

1. 5

100

-V_SD, Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF7304

R_D

V_DS

V_GS

5.0

4.0

3.0

2.0

1.0

0.0

D.U.T.

R_G

V_DD

-4.5 V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

90%

10%

100

125

150

, Case Temperature ( C)

d(on)

d(off)

Fig 9. Maximum Drain Current Vs.

Fig 10b. Switching Time Waveforms

Ambient Temperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

2. Peak T = P

x Z

+ T

thJA

0.1

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7304

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

.3µF

12V

-4.5 V

D.U.T.

-3mA

Current Sampling Resistors

Charge

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

IRF7304

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

D.U.T

• Low Leakage Inductance

Current Transformer

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 13. For P-Channel HEXFETS

IRF7304

Package Outline

SO8Outline

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

1.75

B -

.0532

.0040

.014

.0688

.0098

.018

1.35

0.10

0.36

0.19

4.80

0.25

0.46

0.25

4.98

3.99

0.25 (.010)

.0075

.189

.0098

.196

.150

.157

3.81

.050 BASIC

.025 BASIC

1.27 BASIC

x 45°

e 1

0.635 BASIC

.2284

.011

0.16

0°

.2440

5.80

0.28

0.41

0°

6.20

0.48

1.27

8°

.019

.050

8°

C -

0.10 (.004)

0.25 (.010)

C A S B S

R E C O M M E N D E D F O O T P R I N T

N O T E S :

1. DIMENSIONING AND TOLERANCING PER ANSI Y14. 5M-1982.

2. CONTROLLING DIMENSION INCH.

0.72 (.028

)

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46

(

.255

)

1. 78 (. 070)

D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S

MOLD PROTRUSIONS NOT TO EXCEED 0. 25 (. 006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO

SUBSTRATE..

1.27

(

.050

)

Part Marking Information

SO8

EXAM PLE : THIS IS AN IRF7 101

DATE CODE (YW W )

LAST DIGIT OF THE YEAR

W EEK

W W

3 12

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7 101

W AFER

LOT CODE

PART NUM BER

TOP

(LAST

4 DIGITS)

BOTTOM

IRF7304

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

T E R M IN A L N U M BE R

1 2. 3

1 1. 7

(

.48 4

.46 1

)

8 .1

7 .9

(

.3 18

.3 12

)

F E E D D IR E C T IO N

N OTES:

1 . CO NTR OLL IN G DIM EN SION : M ILL IM ETER.

2 . ALL D IM ENSIONS AR E SHO W N IN M ILL IM ETER S(IN CH ES).

3 . OU TLINE C ON FORM S TO EIA-4 81 & EIA-54 1.

3 30 .00

(12 .9 92 )

M A X .

1 4.4 0

1 2.4 0

(

.5 66

.4 88

)

N O T ES

1. C O N T R O LL IN G D IM E N S IO N

2. O U T LIN E C O N F O R M S T O E IA -48 1

M IL L IM E T E R .

EIA -5 41 .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

8/97

IRF7304TR相关文章

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IRF7304TR产品参数

型号:	IRF7304TR
是否Rohs认证：	不符合
生命周期：	Obsolete
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.11
其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	4.3 A
最大漏极电流 (ID)：	3.6 A
最大漏源导通电阻：	0.09 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	245
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	TIN LEAD
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号IRF7304TR的概述

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