IRF7313现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号IRF7313的概述

芯片IRF7313的概述 IRF7313是一款经过广泛应用的N沟道场效应晶体管（MOSFET），其主要被用于各种电子电路中，以控制电流和电压。场效应晶体管由于其高开关频率和低导通电阻的特性，成为了现代电子设计中的重要组成部分。IRF7313作为一款高性能MOSFET，具有良好的热性能和高效的驱动能力，适合广泛的应用领域，包括电源管理、马达驱动和开关电源等。 IRF7313的设计采用了先进的半导体制造工艺，使其能够在较高的电压和电流下运行，同时保持较低的导通电阻，使其在效率和热管理方面表现优越。该芯片的极小形式因其较大的开关速度和高效电流处理能力而在各类产品中获得青睐。芯片IRF7313的详细参数 IRF7313的主要参数包括： - 类型：N沟道MOSFET - 漏极-源极电压（VDS）：30V - 漏极电流（ID）：80A - 门极-源极电压（VGS）：±20V - 导通电阻（RDS...

产品型号IRF7313的Datasheet PDF文件预览

PD - 91480B

IRF7313

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Surface Mount

V_DSS= 30V

l Fully Avalanche Rated

R_DS(on)= 0.029Ω

Top View

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

SO-8

Absolute Maximum Ratings ( T_A= 25°C Unless Otherwise Noted)

Symbol

V_DS

V_GS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

± 20

6.5

T_A= 25°C

T_A= 70°C

Continuous Drain Currentꢀ

I_D

5.2

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

I_DM

I_S

2.5

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation ꢀ

P_D

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

E_AR

0.20

5.8

V/ ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambientꢀ

R_θJA

62.5

°C/W

9/12/02

IRF7313

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient

0.022 V/°C Reference to 25°C, I_D= 1mA

0.023 0.029

0.032 0.046

1.0

100

-100

V_GS= 10V, I_D= 5.8A

_GS= 4.5V, I_D= 4.7A

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

V_DS= V_GS, I_D= 250µA

V_DS= 15V, I_D= 5.8A

Forward Transconductance

_DS= 24V, V_GS= 0V

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

V_DS= 24V, V_GS= 0V, T_J= 55°C

V_GS= 20V

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

V_GS= -20V

Q_g

I_D= 5.8A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

2.6 3.9

6.4 9.6

nC V_DS= 15V

V_GS= 10V, See Fig. 10

8.1

8.9

V_DD= 15V

Rise Time

I_D= 1.0A

t_d(off)

t_f

Turn-Off Delay Time

R_G= 6.0Ω

R_D= 15Ω

V_GS= 0V

Fall

Time

1726

650

320

130

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

V_DS= 25V

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 9

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

2.5

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

0.78 1.0

T_J= 25°C, I_S= 1.7A, V_GS= 0V

T_J= 25°C, I_F= 1.7A

Q_rr

87nC

di/dt = 100A/µs

Notes:

Repetitive rating; pulse width limited by

I_SD≤ 4.0A, di/dt ≤ 74A/µs, V_DD≤ V_(BR)DSS

T_J≤ 150°C

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 10mH

R_G= 25Ω, I_AS= 4.0A.

Pulse width ≤ 300µs; duty cycle ≤ 2%.

ꢀ Surface mounted on FR-4 board, t ≤ 10sec.

IRF7313

100

VGS

15V

VGS

15V

TOP

10V

7.0V

5.5V

4.5V

4.0V

3.5V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

20µs PULSE WIDTH

= 25°C

= 150°C

0.1

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

VDS

100

T_J= 25°C

T_J= 150°C

T = 150°C

T = 25°C

V_DS= 10V

20µs PULSE WIDTH

= 0V

_5.0A

3.0

3.5

4.0

4.5

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V_GS, Gate-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 4. Typical Source-Drain Diode

Fig 3. Typical Transfer Characteristics

Forward Voltage

IRF7313

2.0

0.040

0.036

0.032

0.028

0.024

0.020

5.8A

= 4.5V

1.5

1.0

0.5

0.0

= 10V

-60 -40 -20

20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

, Drain Current (A)

Fig 5. Normalized On-Resistance

Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature

Current

200

160

120

0.12

TOP

1.8A

3.2A

BOTTOM 4.0A

0.10

0.08

0.06

0.04

0.02

0.00

= 5.8A

150

100

125

Starting T , Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate

Fig 8. Maximum Avalanche Energy

Voltage

Vs. Drain Current

IRF7313

1200

900

600

300

= 0V,

f = 1MHz

iss

rss

oss

I = 5.8A

= C + C

SHORTED

= 15V

= C

= C + C

iss

oss

rss

100

Q , Total Gate Charge (nC)

, Drain-to-Source Voltage (V)

Fig 9. Typical Capacitance Vs.

Fig 10. Typical Gate Charge Vs.

Drain-to-Source Voltage

Gate-to-Source Voltage

100

0.50

0.20

0.10

0.05

0.02

0.01

Notes:

1. Duty factor D = t / t

SINGLE PULSE

(THERMAL RESPONSE)

2. Peak T =P

x Z

+ T

thJA A

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7313

Package Outline

SO8 Outline

INCHES

MIN MAX

.0532 .0688 1.35

MILLIMETERS

DIM

- B -

MIN

MAX

1.75

0.25

0.46

0.25

4.98

3.99

A1 .0040 .0098 0.10

.014

.018

0.36

0.25 (.010)

A M

- A -

.0075 .0098 0.19

.189

.150

.196

.157

4.80

3.81

.050 BASIC

.025 BASIC

.2284 .2440

1.27 BASIC

0.635 BASIC

5.80 6.20

K x 45°

.011

0.16

0°

.019

.050

8°

0.28

0.41 1.27

0° 8°

0.48

- C -

0.10 (.004)

0.25 (.010)

M C A S B S

RECOMMENDED FOOTPRINT

NOTES:

0.72 (.028 )

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

2. CONTROLLING DIMENSION : INCH.

3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

6.46 ( .255 )

1.78 (.070)

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS

MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).

DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..

1.27 ( .050 )

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101

DATE CODE (YWW)

Y = LAST DIGIT OF THE YEAR

WW = WEEK

312

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

WAFER

LOT CODE

PART NUMBER

TOP

(LAST 4 DIGITS)

BOTTOM

IRF7313

Tape & Reel Information

SO8

Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

9/02

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