IRF9Z24N各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号IRF9Z24N的概述

IRF9Z24N 芯片概述与详细参数一、芯片概述 IRF9Z24N 是一款 N 沟道 MOSFET（场效应管），由国际整流器公司（International Rectifier）早期设计和生产，广泛应用于电源管理、开关电源和电动机控制等领域。MOSFET 作为现代电子设备中重要的电子开关器件，具有高输入阻抗、快速开关速度和低导通电阻等优点，适合用于高频和高功率场合。 IRF9Z24N 的主要特点是能够在高电压和电流下稳定工作，其极小的导通电阻（Rds(on)）使其在大电流条件下展现出较低的功耗。此外，该器件的开关特性良好，能够快速响应控制信号，适用于高频率工作环境。二、详细参数 IRF9Z24N 的关键参数如下： 1. 最大漏极源极电压（Vds）: -55V 2. 最大漏极电流（Id）: -30A 3. 导通电阻（Rds(on)）: 0.4Ω（当 Vgs = -10V 时） 4....

产品型号IRF9Z24N的Datasheet PDF文件预览

PD -9.1484B

IRF9Z24N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.175Ω

l P-Channel

l Fully Avalanche Rated

I_D= -12A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-12

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-8.5

-48

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-7.2

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

4.5

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

3.3

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

8/27/97

IRF9Z24N

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-55 ––– –––

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= -250µA

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, I_D= -1mA

R_DS(on)

V_GS(th)

g_fs

Static Drain-to-Source On-Resistance ––– ––– 0.175

Ω

V_GS= -10V, I_D= -7.2A

V_DS= V_GS, I_D= -250µA

V_DS= -25V, I_D= -7.2A

V_DS= -55V, V_GS= 0V

V_DS= -44V, V_GS= 0V, T_J= 150°C

V_GS= 20V

Gate Threshold Voltage

-2.0 ––– -4.0

2.5 ––– –––

Forward Transconductance

––– ––– -25

––– ––– -250

––– ––– 100

––– ––– -100

––– ––– 19

––– ––– 5.1

––– ––– 10

I_DSS

Drain-to-Source Leakage Current

µA

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= -7.2A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -44V

V_GS= -10V, See Fig. 6 and 13

–––

13 –––

55 –––

23 –––

37 –––

V_DD= -28V

I_D= -7.2A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 24Ω

R_D= 3.7Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

4.5

7.5

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

–––

and center of die contact

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 350 –––

––– 170 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

–––

92 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-12

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

––– ––– -48

––– ––– -1.6

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

T_J= 25°C, I_S= -7.2A, V_GS= 0V

––– 47

––– 84 130

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

T_J= 25°C, I_F= -7.2A

Q_rr

t_on

µC di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

I_SD≤ -7.2A, di/dt ≤ -280A/µs, V_DD≤ V_(BR)DSS

T_J≤ 175°C

max. junction temperature. ( See fig. 11 )

Starting T_J= 25°C, L = 3.7mH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= -7.2A. (See Figure 12)

IRF9Z24N

1 0 0

1 0

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

20µs PULS E W IDTH

= 25°C

TOP

BOTT OM - 4. 5V

20µs PULSE W IDTH

-4.5V

= 175°C

0. 1

1 0

1 0 0

0.1

100

-V

, Drain-to-Source Voltage (V)

-V

, Drain-to-Source Voltage (V)

D S

Fig 1. Typical Output Characteristics,

Fig 2. Typical Output Characteristics,

2. 0

1. 5

1. 0

0. 5

0. 0

1 0 0

= -12A

= 25°C

= 175°C

1 0

= -2 5V

= -10V

20µs P ULS E W IDTH

_{1 0}A

- 6 0 - 4 0 - 2 0

2 0

4 0

6 0

8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0

T_J, Junction Temperature (°C)

-V_{G S}, Ga te-to-So urce Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF9Z24N

700

= -7.2A

= 0V ,

f = 1MH z

iss

= C

+ C

SHORTED

g d

= -44V

= -28V

600

500

400

300

200

100

rss

oss

is s

o s s

rs s

FOR TEST CIRCUIT

SEE FIGURE 13

100

V_{D S}, Drain-to-Source Voltage (V)

Q _G, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

1 0 0

1 0

100

OPERATION IN THIS AREA LIM ITED

BY R

D S(o n)

1 0µs

= 150°C

= 25°C

100µs

1m s

= 25°C

= 175°C

Single Pulse

= 0V

10m s

0. 1

0. 4

0. 6

0. 8

1. 0

1. 2

1. 4

1. 6

1. 8

100

-V

, Drain-to-Source Voltage (V)

-V_SD, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

IRF9Z24N

1 2

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

1 7 5

2 5

5 0

7 5

1 0 0

1 2 5

1 5 0

T_C, Case Temperature (°C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

1 0

0 .5 0

0 .2 0

0 .1 0

0 .0 5

0 .0 2

0 .0 1

0. 1

S IN G LE P U L S E

(T H E R M A L R E S P O N S E )

Notes:

1. D uty factor D

/ t

2. Pea k T = P

x Z

+ T

th JC

0 . 0 1

0 . 0 0 0 0 1

0 . 0 0 0 1

0 . 0 0 1

0 . 0 1

0. 1

t₁, Rectan gular Pulse Duratio n (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9Z24N

250

200

150

100

-2.9A

-5.1A

D S

TOP

D .U .T

B OTTOM -7.2A

D D

D R IVER

-20V

0 .0 1

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

175

100

125

150

Starting T_J, Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRF9Z24N

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

] ***

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF9Z24N

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

1 0.5 4 (.41 5)

1 0.2 9 (.40 5)

3.78 (.14 9)

3.54 (.13 9)

2 .87 ( .1 13 )

2 .62 ( .1 03 )

4 .69 ( .1 85 )

4 .20 ( .1 65 )

1 .3 2 (.0 52 )

1 .2 2 (.0 48 )

6.4 7 (.25 5)

6.1 0 (.24 0)

1 5.24 ( .6 0 0)

1 4.84 ( .5 8 4)

1.15 ( .0 4 5)

L E A D

IG N M E N T S

M IN

G A T E

D R A IN

U R C E

D R A IN

1 4.09 (.5 5 5)

1 3.47 (.5 3 0)

4.0 6 (.16 0)

3.5 5 (.14 0)

0 .93 ( .0 37 )

0 .69 ( .0 27 )

0.5 5 (.02 2)

0.4 6 (.01 8)

1 .4 0 (.05 5 )

1 .1 5 (.04 5 )

3 X

0 .3 6 (.01 4)

2 .9 2 (.11 5 )

2 .6 4 (.10 4 )

2 .54 ( .1 00 )

N O T E

S :

D IM E N S IO N IN G

C O N T R O L LIN G

T O L E R A N C IN G

E R

N S

14 .5 M , 1 98 2.

U T L IN E C O N F O R M S T O J E D E

O U T LIN E T O -2 20 A B .

N O IN C L U D E B U R R S .

IM E N S IO IN C H

H E A T S IN L E A D E A U R E M E N T S

Part Marking Information

TO-220AB

EXAM PLE : THIS IS AN IRF1010

W ITH ASSEMBLY

INTERNATIONAL

PART NUM BER

LOT CODE 9B1M

RECTIFIER

IRF1010

LOGO

9246

DATE CODE

ASSEM BLY

LOT CODE

(YYW W )

YEAR

= YEAR

W W

= W EEK

W W W EEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

8/97

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