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    产品型号IRHY593130CM的Datasheet PDF文件预览

    PD - 94343  
    RADIATION HARDENED  
    POWER MOSFET  
    THRU-HOLE (TO-257AA)  
    IRHY597130CM  
    100V, P-CHANNEL  
    TECHNOLOGY  
    R
    5
    ™
    Product Summary  
    Part Number  
    Radiation Level RDS(on)  
    ID  
    IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A  
    IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A  
    International Rectifier’s R5TM technology provides  
    high performance power MOSFETs for space appli-  
    cations. These devices have been characterized for  
    Single Event Effects (SEE) with useful performance  
    up to an LET of 80 (MeV/(mg/cm2)). The combination  
    of low RDS(on) and low gate charge reduces the power  
    losses in switching applications such as DC to DC  
    converters and motor control. These devices retain  
    all of the well established advantages of MOSFETs  
    such as voltage control, fast switching, ease of paral-  
    leling and temperature stability of electrical param-  
    eters.  
    T0-257AA  
    Features:  
    n
    n
    n
    n
    n
    n
    n
    n
    n
    Single Event Effect (SEE) Hardened  
    Ultra Low RDS(on)  
    Low Total Gate Charge  
    Proton Tolerant  
    Simple Drive Requirements  
    Ease of Paralleling  
    Hermetically Sealed  
    Ceramic Package  
    Light Weight  
    Absolute Maximum Ratings  
    Pre-Irradiation  
    Parameter  
    Units  
    I
    @ V  
    @ V  
    = -12V, T = 25°C Continuous Drain Current  
    -12.5  
    -8.0  
    D
    GS  
    C
    A
    I
    D
    = -12V, T = 100°C Continuous Drain Current  
    C
    GS  
    I
    Pulsed Drain Current ➀  
    Max. Power Dissipation  
    -50  
    DM  
    @ T = 25°C  
    P
    75  
    W
    W/°C  
    V
    D
    C
    Linear Derating Factor  
    0.6  
    V
    Gate-to-Source Voltage  
    ±20  
    GS  
    E
    Single Pulse Avalanche Energy ➀  
    Avalanche Current ➀  
    94  
    mJ  
    A
    AS  
    I
    -12.5  
    7.5  
    AR  
    E
    AR  
    dv/dt  
    Repetitive Avalanche Energy ➀  
    Peak Diode Recovery dv/dt ➀  
    Operating Junction  
    mJ  
    V/ns  
    -4.3  
    T
    -55 to 150  
    J
    T
    Storage Temperature Range  
    oC  
    g
    STG  
    Lead Temperature  
    Weight  
    300 (0.063in/1.6mm from case for 10s )  
    4.3 ( Typical )  
    For footnotes refer to the last page  
    www.irf.com  
    1
    11/19/01  
    IRHY597130CM  
    Pre-Irradiation  
    Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    BV  
    DSS  
    Drain-to-Source Breakdown Voltage  
    -100  
    —
    —
    —
    —
    V
    V
    = 0V, I = -1.0mA  
    D
    GS  
    V/°C Reference to 25°C, I = -1.0mA  
    ∆BV  
    /∆T Temperature Coefficient of Breakdown  
    -0.12  
    DSS  
    J
    D
    Voltage  
    R
    Static Drain-to-Source On-State  
    Resistance  
    —
    —
    0.215  
    Ω
    V = -12V, I = -8.0A  
    GS D  
    DS(on)  
    ➀
    V
    Gate Threshold Voltage  
    Forward Transconductance  
    Zero Gate Voltage Drain Current  
    -2.0  
    6.3  
    —
    —
    —
    —
    —
    -4.0  
    —
    V
    V
    = V , I = -1.0mA  
    GS(th)  
    fs  
    DS  
    GS  
    D
    Ω
    g
    S ( )  
    V
    DS  
    V
    > -15V, I  
    = -8.0A ➀  
    DS  
    I
    -10  
    -25  
    = -80V ,V =0V  
    DS GS  
    DSS  
    µA  
    —
    V
    = -80V,  
    DS  
    = 0V, T =125°C  
    V
    GS  
    J
    I
    I
    Gate-to-Source Leakage Forward  
    Gate-to-Source Leakage Reverse  
    Total Gate Charge  
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    6.8  
    -100  
    100  
    40  
    V
    V
    = -20V  
    = 20V  
    GSS  
    GSS  
    GS  
    GS  
    nA  
    nC  
    Q
    Q
    Q
    V
    =-12V, I = -12.5A  
    GS D  
    g
    gs  
    gd  
    d(on)  
    r
    Gate-to-Source Charge  
    Gate-to-Drain (‘Miller’) Charge  
    Turn-On Delay Time  
    Rise Time  
    Turn-Off Delay Time  
    FallTime  
    16  
    11  
    V
    = -50V  
    DS  
    t
    t
    t
    t
    25  
    V
    DD  
    V
    = -50V, I = -12.5A,  
    D
    55  
    30  
    =-12V, R = 7.5Ω,  
    GS G  
    ns  
    d(off)  
    f
    100  
    —
    L
    + L  
    Total Inductance  
    Measured from drain lead (6mm/  
    0.25in. from package) to source  
    lead (6mm/0.25in. from package)  
    S
    D
    nH  
    C
    C
    C
    Input Capacitance  
    Output Capacitance  
    —
    —
    —
    1350  
    330  
    20  
    —
    —
    —
    V
    = 0V, V  
    = -25V  
    iss  
    oss  
    rss  
    GS  
    DS  
    f = 1.0MHz  
    pF  
    Reverse Transfer Capacitance  
    Source-Drain Diode Ratings and Characteristics  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    I
    I
    Continuous Source Current (Body Diode)  
    Pulse Source Current (Body Diode) ➀  
    Diode Forward Voltage  
    —
    —
    —
    —
    —
    —
    —
    —
    —
    —
    -12.5  
    -50  
    S
    A
    SM  
    V
    t
    -5.0  
    150  
    620  
    V
    ns  
    nC  
    T = 25°C, I = -12.5A, V  
    = 0V ➀  
    j
    SD  
    rr  
    S
    GS  
    Reverse Recovery Time  
    T = 25°C, I =-12.5A, di/dt ≤ -100A/µs  
    j
    F
    V
    Q
    Reverse Recovery Charge  
    ≤ -25V ➀  
    DD  
    RR  
    t
    Forward Turn-On Time  
    Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
    S D  
    on  
    Thermal Resistance  
    Parameter  
    Min Typ Max Units  
    Test Conditions  
    R
    R
    Junction-to-Case  
    —
    —
    —
    —
    1.67  
    80  
    thJC  
    thJA  
    °C/W  
    Junction-to-Ambient  
    Typical Socket Mount  
    Note: Corresponding Spice and Saber models are available on the G&S Website.  
    For footnotes refer to the last page  
    2
    www.irf.com  
    Radiation Characteristics  
    IRHY597130CM  
    International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.  
    The hardness assurance program at International Rectifier is comprised of two radiation environments.  
    Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both  
    pre- and post-irradiation performance are tested and specified using the same drive circuitry and test  
    conditions in order to provide a direct comparison.  
    Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation ➀➀  
    Parameter  
    100K Rads(Si)1 300KRads(Si)2  
    Units  
    Test Conditions  
    Min  
    Max  
    Min  
    Max  
    BV  
    Drain-to-Source Breakdown Voltage  
    Gate Threshold Voltage  
    Gate-to-Source Leakage Forward  
    Gate-to-Source Leakage Reverse  
    Zero Gate Voltage Drain Current  
    -100  
    -2.0  
    —
    —
    -4.0  
    -100  
    100  
    -200  
    -2.0  
    —
    —
    -5.0  
    -100  
    100  
    V
    = 0V, I = -1.0mA  
    D
    DSS  
    GS  
    GS  
    V
    V
    V
    = V , I = -1.0mA  
    GS(th)  
    DS  
    D
    I
    V
    GS  
    V
    GS  
    =-20V  
    = 20 V  
    GSS  
    nA  
    I
    —
    —
    GSS  
    I
    —
    —
    -10  
    0.205  
    —
    —
    -10  
    0.205  
    µA  
    Ω
    V
    V
    =-80V, V =0V  
    GS  
    = -12V, I =-8.0A  
    D
    DSS  
    DS  
    GS  
    R
    DS(on)  
    Static Drain-to-Source  
    On-State Resistance (TO-3)  
    Static Drain-to-Source  
    On-State Resistance (TO-257AA)  
    Diode Forward Voltage  
    ➀
    R
    DS(on)  
    ➀
    —
    —
    0.215  
    -5.0  
    —
    —
    0.215  
    -5.0  
    Ω
    V
    = -12V, I =-8.0A  
    D
    GS  
    V
    SD  
    ➀
    V
    V
    = 0V, I = -12.5A  
    GS S  
    1. Part number IRHY597130CM  
    2. Part number IRHY593130CM  
    International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for  
    Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.  
    Table 2. Single Event Effect Safe Operating Area  
    VDS (V)  
    Ion  
    LET  
    (MeV/(mg/cm2))  
    37.9  
    Energy  
    (MeV)  
    252.6  
    314  
    Range  
    @VGS=20V  
    (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V  
    Br  
    I
    Au  
    33.1  
    30.5  
    28.4  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -100  
    -30  
    -100  
    -75  
    —
    -100  
    -25  
    59.7  
    82.3  
    350  
    —
    -120  
    -100  
    -80  
    -60  
    -40  
    -20  
    0
    Br  
    I
    Au  
    0
    5
    10  
    15  
    20  
    25  
    VGS  
    Fig a. Single Event Effect, Safe Operating Area  
    For footnotes refer to the last page  
    www.irf.com  
    3
    IRHY597130CM  
    Pre-Irradiation  
    100  
    10  
    1
    100  
    VGS  
    -15V  
    -12V  
    -10V  
    -9.0V  
    -8.0V  
    -7.0V  
    -6.0V  
    VGS  
    TOP  
    TOP  
    -15V  
    -12V  
    -10V  
    -9.0V  
    -8.0V  
    -7.0V  
    -6.0V  
    BOTTOM -5.0V  
    BOTTOM -5.0V  
    10  
    -5.0V  
    -5.0V  
    20µs PULSE WIDTH  
    T = 25 C  
    J
    20µs PULSE WIDTH  
    T = 150 C  
    J
    °
    °
    1
    0.1  
    1
    10  
    100  
    0.1  
    1
    10  
    100  
    -V , Drain-to-Source Voltage (V)  
    DS  
    -V , Drain-to-Source Voltage (V)  
    DS  
    Fig 2. Typical Output Characteristics  
    Fig 1. Typical Output Characteristics  
    100  
    10  
    1
    2.5  
    2.0  
    1.5  
    1.0  
    0.5  
    0.0  
    -12.5A  
    =
    I
    D
    °
    T = 25 C  
    J
    °
    T = 150 C  
    J
    V
    = -25V  
    20µs PULSE WIDTH  
    DS  
    V
    = -12V  
    GS  
    5
    6
    7
    8
    9
    10 11  
    -60 -40 -20  
    0
    20 40 60 80 100 120 140 160  
    °
    -V , Gate-to-Source Voltage (V)  
    GS  
    T , Junction Temperature( C)  
    J
    Fig 3. Typical Transfer Characteristics  
    Fig 4. Normalized On-Resistance  
    Vs.Temperature  
    4
    www.irf.com  
    Pre-Irradiation  
    IRHY597130CM  
    20  
    16  
    12  
    8
    2000  
    I
    D
    = -12.5A  
    V
    = 0V,  
    f = 1MHz  
    C SHORTED  
    ds  
    GS  
    V
    V
    V
    =-80V  
    =-50V  
    =-20V  
    C
    = C + C  
    DS  
    DS  
    DS  
    iss  
    gs  
    gd ,  
    C
    = C  
    rss  
    gd  
    C
    = C + C  
    gd  
    1600  
    1200  
    800  
    400  
    0
    oss  
    ds  
    C
    C
    iss  
    oss  
    4
    FOR TEST CIRCUIT  
    SEE FIGURE 13  
    C
    rss  
    0
    0
    10  
    20  
    30  
    40  
    1
    10  
    100  
    Q
    , Total Gate Charge (nC)  
    -V , Drain-to-Source Voltage (V)  
    DS  
    G
    Fig 6. Typical Gate Charge Vs.  
    Fig 5. Typical Capacitance Vs.  
    Gate-to-SourceVoltage  
    Drain-to-SourceVoltage  
    100  
    100  
    10  
    1
    OPERATION IN THIS AREA LIMITED BY RDS(on)  
    10  
    1
    100µs  
    1ms  
    °
    T = 150 C  
    J
    °
    T = 25 C  
    J
    1
    0ms  
    Tc = 25°C  
    Tj = 150°C  
    Single Pulse  
    V
    = 0 V  
    GS  
    0.1  
    0.1  
    1.0  
    2.0  
    3.0  
    4.0  
    5.0  
    6.0  
    1
    10  
    100  
    1000  
    -V ,Source-to-Drain Voltage (V)  
    SD  
    V
    , Drain-toSource Voltage (V)  
    DS  
    Fig 8. Maximum Safe Operating Area  
    Fig 7. Typical Source-Drain Diode  
    ForwardVoltage  
    www.irf.com  
    5
    IRHY597130CM  
    Pre-Irradiation  
    RD  
    14  
    12  
    10  
    8
    VDS  
    VGS  
    D.U.T.  
    RG  
    -
    +
    VDD  
    VGS  
    Pulse Width ≤ 1 µs  
    Duty Factor ≤ 0.1 %  
    6
    Fig 10a. Switching Time Test Circuit  
    4
    t
    t
    r
    t
    t
    f
    d(on)  
    d(off)  
    2
    V
    GS  
    10%  
    0
    25  
    50  
    T
    75  
    100  
    125  
    150  
    °
    , Case Temperature ( C)  
    C
    90%  
    V
    DS  
    Fig 9. Maximum Drain Current Vs.  
    CaseTemperature  
    Fig 10b. Switching Time Waveforms  
    10  
    1
    D = 0.50  
    0.20  
    0.10  
    0.05  
    P
    DM  
    0.1  
    t
    0.02  
    0.01  
    SINGLE PULSE  
    (THERMAL RESPONSE)  
    1
    t
    2
    Notes:  
    1. Duty factor D =  
    t / t  
    1 2  
    2. Peak T = P  
    x Z  
    + T  
    C
    J
    DM  
    thJC  
    0.01  
    0.00001  
    0.0001  
    0.001  
    0.01  
    0.1  
    1
    t , Rectangular Pulse Duration (sec)  
    1
    Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
    6
    www.irf.com  
    Pre-Irradiation  
    IRHY597130CM  
    L
    200  
    160  
    120  
    80  
    V
    DS  
    I
    D
    TOP  
    -5.6A  
    -8.0A  
    BOTTOM-12.5A  
    -
    D.U.T  
    R
    G
    VDD  
    A
    +
    I
    AS  
    DRIVER  
    V
    -
    GS  
    0.01  
    t
    Ω
    p
    15V  
    40  
    Fig 12a. Unclamped Inductive Test Circuit  
    0
    I
    AS  
    25  
    50  
    75  
    100  
    125  
    150  
    °
    Starting T , Junction Temperature( C)  
    J
    Fig 12c. Maximum Avalanche Energy  
    Vs. DrainCurrent  
    t
    p
    V
    (BR)DSS  
    Fig 12b. Unclamped Inductive Waveforms  
    Current Regulator  
    Same Type as D.U.T.  
    50KΩ  
    .2µF  
    Q
    Q
    G
    -12V  
    1
    .3µF  
    -12 V  
    -
    Q
    V
    GS  
    GD  
    +
    DS  
    D.U.T.  
    V
    GS  
    V
    G
    -3mA  
    I
    I
    D
    G
    Charge  
    Current Sampling Resistors  
    Fig 13b. Gate Charge Test Circuit  
    Fig 13a. Basic Gate Charge Waveform  
    www.irf.com  
    7
    IRHY597130CM  
    Footnotes:  
    Pre-Irradiation  
    ➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%  
    ➀➀➀Total Dose Irradiation with V Bias.  
    ➀➀ Repetitive Rating; Pulse width limited by  
    maximum junction temperature.  
    GS  
    = 0 during  
    -12 volt V  
    applied and V  
    ➀➀➀V  
    = -25V, starting T = 25°C, L=1.2 mH  
    J
    GS  
    irradiation per MIL-STD-750, method 1019, condition A.  
    DS  
    DD  
    Peak I = -12.5A, V  
    = -12V  
    L
    GS  
    ➀➀Total Dose Irradiation with V Bias.  
    ➀➀ I  
    ≤ -12.5A, di/dt ≤ -320A/µs,  
    DS  
    applied and V = 0 during  
    GS  
    SD  
    DD  
    -80 volt V  
    V
    ≤ -100V, T ≤ 150°C  
    DS  
    J
    irradiation per MlL-STD-750, method 1019, condition A.  
    Case Outline and Dimensions —TO-257AA  
    0.13 [.005]  
    A
    5.08 [.200]  
    4.83 [.190]  
    3.81 [.150]  
    3.56 [.140]  
    10.66 [.420]  
    10.42 [.410]  
    3X Ø  
    1.14 [.045]  
    0.89 [.035]  
    16.89 [.665]  
    16.39 [.645]  
    13.63 [.537]  
    13.39 [.527]  
    B
    10.92 [.430]  
    10.42 [.410]  
    1
    2
    3
    0.71 [.028]  
    MAX.  
    C
    15.88 [.625]  
    12.70 [.500]  
    2.54 [.100]  
    2X  
    0.88 [.035]  
    0.64 [.025]  
    3X Ø  
    3.05 [.120]  
    Ø 0.50 [.020]  
    C
    A
    B
    NOTES:  
    1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.  
    2. CONT ROLLING DIMENS ION: INCH.  
    3. DIMENSIONS ARE S HOWN IN MILLIMETERS [INCHES].  
    4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.  
    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
    TAC Fax: (310) 252-7903  
    Visit us at www.irf.com for sales contact information.  
    Data and specifications subject to change without notice. 11/01  
    8
    www.irf.com  
    配单直通车
    IRHY593130CM产品参数
    型号:IRHY593130CM
    是否无铅： 含铅
    是否Rohs认证： 不符合
    生命周期：Transferred
    IHS 制造商：INTERNATIONAL RECTIFIER CORP
    包装说明：FLANGE MOUNT, R-MSFM-P3
    Reach Compliance Code：compliant
    ECCN代码：EAR99
    风险等级：5.19
    Is Samacsys：N
    雪崩能效等级（Eas）：94 mJ
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：100 V
    最大漏极电流 (Abs) (ID)：12.5 A
    最大漏极电流 (ID)：12.5 A
    最大漏源导通电阻：0.215 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JEDEC-95代码：TO-257AA
    JESD-30 代码：R-MSFM-P3
    JESD-609代码：e0
    元件数量：1
    端子数量：3
    工作模式：ENHANCEMENT MODE
    最高工作温度：150 °C
    封装主体材料：METAL
    封装形状：RECTANGULAR
    封装形式：FLANGE MOUNT
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：P-CHANNEL
    最大功率耗散 (Abs)：75 W
    最大脉冲漏极电流 (IDM)：50 A
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：PIN/PEG
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    Base Number Matches：1
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