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产品型号IS61C3216-12T的概述

一、IS61C3216-12T的概述 IS61C3216-12T是一款由Intersil（现为Renesas Electronics）设计和生产的高性能动态随机存取存储器（DRAM）。该芯片采用304位结构，具有较高的密度和较快的访问速度，适用于多种电子应用，包括计算机、嵌入式系统以及消费电子产品等。 IS61C3216-12T的核心功能在于其能够以较高的速度存储和读取数据。这款芯片通常工作于12纳秒的速度，适合于需要快速动态存取的场合。它采用了CMOS工艺，使得在功耗和性能之间实现了良好的平衡，从而使得该芯片在现代电子产品中得到了广泛的应用。二、详细参数 IS61C3216-12T的主要工作参数包括： 1. 型号：IS61C3216-12T 2. 类型：动态随机存取存储器（DRAM） 3. 存储器结构：512 × 8位或256 × 16位 4. 存储容量：2M位（2Meg x 16...

产品型号IS61C3216-12T的Datasheet PDF文件预览

OS-CON DATA SHEET

No.OS02N-DFSVP051

OS-CON 6SVP470M

Frequency (kHz)

Impedance (ohm)

ESR (ohm)

0.12

2.824

0.084

0.5

0.691

0.044

1

0.353

0.037

10

0.046

0.017

100

0.010

0.009

500

0.013

0.009

1000

0.024

0.009

5000

0.103

0.022

10000

0.230

0.024

Frequency characteristics

1000

100

10

Impedance (ohm)

ESR (ohm)

1

0.1

0.01

0.001

0.1

1

10

100

1000

10000

Frequency (kHz)

Measureing equipment: HP4194A

Test fixture: HP16047C

Measuring position: root of leads

OS Engineering Department, OS-CON Control Department

Saga SANYO Industries Co., Ltd.

n = 3p.(Ave.)

Room temperature

OS-CON DATA SHEET

SVP series

Test item

Endurance

Test temperature

105 deg.C

Model

6SVP470M

130106406

(After V.P.S test)

Applied voltage

6.3V

Lot No.

Tangent of loss angle (120Hz)

Change in capacitance (120Hz)

0.15

0.14

0.13

0.12

0.11

0.1

20

10

0

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0

-10

-20

-30

-40

0

2000

0

2000

Time[h]

Leakage current (6.3V 60s)

ESR (100kHz)

100

90

80

70

60

50

40

30

20

10

0

10000

1000

100

10

1

0.1

0.01

0

2000

0

2000

Time[h]

Note:

n =30p.

V.P.S test conditions : 230deg.C×75s×2times

(V.P.S=Vapor Phase Soldering method)

Start on September 10, 2001

End on December 2, 2001

Executed by R. Kawachino

Drawn by S. Yoshino

No.OS02D-DESVP051

OS Engineering Departmaent, OS-CON Control Department, Saga SANYO Industries Co., Ltd.

OS-CON DATA SHEET

SVP series

Test item

Damp heat (Steady state)

(After V.P.S test)

Test temperature

60 deg.C

Model

6SVP470M

060202471

Test humidity

90% RH

Lot No.

Change in capacitance (120Hz)

Tangent of loss angle (120Hz)

0.15

0.14

0.13

0.12

0.11

0.1

20

10

0

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0

-10

-20

-30

-40

0

1000

0

1000

Time[h]

Leakage current (6.3V 60s)

ESR (100kHz)

100

90

80

70

60

50

40

30

20

10

0

10000

1000

100

10

1

0.1

0.01

0

1000

0

1000

Time[h]

Note:

n =20p.

V.P.S test conditions : 230deg.C×75s×2times

(V.P.S = Vapor Phase Soldering method)

Start on November 7, 2001

End on December 20, 2001

Executed by R. Kawachino

Drawn by M. Kimura

No.OS02D-DHSVP051

OS Engineering Department, OS-CON Control Department, Saga SANYO Industries Co., Ltd.

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产品型号IS61C3216-12T的概述

产品型号IS61C3216-12T的Datasheet PDF文件预览

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