J1116DBSE-DJ-F全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

DISCRETE SEMICONDUCTORS

DATA SHEET

J111; J112; J113

N-channel silicon field-effect

transistors

July 1993

Product speciﬁcation

File under Discrete Semiconductors, SC07

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

DESCRIPTION

Symmetrical silicon n-channel

junction FETs in plastic TO-92

envelopes. They are intended for

applications such as analog switches,

choppers, commutators etc.

FEATURES

1

handbook, halfpage

2

3

d

• High speed switching

g

s

• Interchangeability of drain and

MAM042

source connections

• Low R_{DS on}at zero gate voltage

PINNING

1 = gate

Fig.1 Simplified outline and symbol, TO-92.

2 = source

3 = drain

Note: Drain and source are

interchangeable.

QUICK REFERENCE DATA

J111

J112

J113

Drain-source voltage

Drain current

±V_DS

max.

min.

max.

40

V

V_DS= 15 V; V_GS= 0

Total power dissipation

up to T_amb= 50 °C

I_DSS

20

5

2

mA

mW

P_tot

400

Gate-source cut-off voltage

min.

max.

3

10

1

5

0.5

3

V

V_DS= 5 V; I_D= 1 µA

−V_{GS off}

Drain-source on-state resistance

V_DS= 0.1 V; V_GS= 0

R_{DS on}

max.

30

50

100

Ω

July 1993

2

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

Gate-source voltage

Gate-drain voltage

±V_DS

−V_GSO

−V_GDO

I_G

max.

40 V

50 mA

Gate forward current (DC)

Total power dissipation

up to T_amb= 50 °C

P_tot

T_stg

T_j

max.

400 mW

−65 to + 150 °C

150 °C

Storage temperature range

Junction temperature

THERMAL RESISTANCE

From junction to ambient in free air

R_{th j-a}

=

250 K/W

STATIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

J111

1

J112

J113

Gate reverse current

−V_GS= 15 V; V_DS= 0

Drain cut-off current

V_DS= 5 V; −V_GS= 10 V

Drain saturation current

−I_GSS

−I_DSX

I_DSS

max.

1

nA

mA

V

max.

min.

1

5

1

2

V_DS= 15 V; V_GS= 0

20

40

Gate-source breakdown voltage

−I_G= 1 µA; V_DS= 0

−V_(BR)GSS

−V_{GS off}

R_DSon

40

Gate-source cut-off voltage

min.

3

1

5

0.5

3

V

_DS= 5 V; I_D= 1 µA

max.

10

Drain-source on-state resistance

_DS= 0.1 V; V_GS= 0

V

max.

30

50

100

Ω

July 1993

3

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

DYNAMIC CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed

Input capacitance

V

_DS= 0; −V_GS= 10 V; f = 1 MHz

C_is

typ.

6 pF

22 pF

28 pF

typ.

V_DS= −V_GS= 0; f = 1 MHz

max.

Feedback capacitance

V_DS= 0; −V_GS= 10 V; f = 1 MHz

C_rs

typ.

3 pF

Switching times

test conditions

V_DD= 10 V; V_GS= 0 to V_GSoff

−V_{GS off}= 12 V; R_L= 750 Ω for J111

−V_{GS off}= 7 V; R_L= 1550 Ω for J112

−V_{GS off}= 5 V; R_L= 3150 Ω for J113

Rise time

t_r

typ.

6 ns

13 ns

15 ns

35 ns

Turn-on time

t_on

t_f

Fall time

Turn-off time

t_off

V

= 0 V

GS

10%

90%

1 µF

k, halfpage

50 Ω

10 µF

V

i

DD

10 nF

R

L

V

GS off

t

off

on

SAMPLING

SCOPE

50 Ω

DUT

t

f

r

90%

10%

50 Ω

V

o

MBK289

MBK288

Fig.2 Switching times test circuit.

Fig.3 Input and output waveforms.

July 1993

4

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

c

E

d

A

L

b

1

2

e

1

e

D

3

b

1

L

1

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

A

b

c

D

d

E

e

L

1

5.2

5.0

0.48

0.40

0.66

0.56

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

mm

2.54

1.27

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-02-28

SOT54

TO-92

SC-43

July 1993

5

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

J111; J112; J113

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Short-form speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

July 1993

6

型号:	J111A
生命周期：	Contact Manufacturer
IHS 制造商：	NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code：	unknown
风险等级：	5.66
Is Samacsys：	N
Base Number Matches：	1

电子百科

产品导航

产品型号J1116DBSE-DJ-F的概述

产品型号J111AMO的Datasheet PDF文件预览

J1116DBSE-DJ-F相关产品

J1116DBSE-DJ-F相关文章

IC37:专业IC行业平台