J211IC贸易商引脚图技术参数全新原装-中国IC网-芯三七

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产品型号J211的概述

芯片J211的概述芯片J211是一款广泛应用于模拟信号处理和多种功率管理的集成电路。它具有优良的性能特征和较高的可靠性，适用于多种电子设备。J211芯片不仅支持高频率的信号处理功能，还具备低功耗的优势，使得其在可穿戴设备、移动通讯和智能家居等领域的应用越来越普遍。该芯片采用先进的半导体工艺，具有更强的抗干扰能力和较低的工作温度范围，这使得其在恶劣环境下的工作表现更加出色。通过将数字和模拟电路集成在同一芯片上，J211能够实现多种功能的协同工作，从而降低系统的复杂度和成本。芯片J211的详细参数 J211芯片的详细参数主要包括以下几个方面： - 工作电压: 3.3V至5V - 功耗: 工作状态下的典型功耗为10mW - 信号处理频率: 支持高达100MHz的信号处理能力 - 输入阻抗: 10kΩ - 输出阻抗: 50Ω - 温度范围: -40°C至+85°C - 封装类型: TQF...

产品型号J211的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

J210; J211; J212

N-channel field-effect transistors

Product speciﬁcation

1997 Dec 01

File under Discrete Semiconductors, SC07

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

FEATURES

PINNING - TO-92 (SOT54)

• High speed switching

SYMBOL

DESCRIPTION

• Interchangeability of drain and source connections

• High impedance.

gate

source

drain

APPLICATIONS

• Analog switches

• Choppers, multiplexers and commutators

• Audio amplifiers.

handbook, halfpage

DESCRIPTION

MAM197

N-channel symmetrical junction field-effect transistor in a

TO-92 (SOT54) package.

CAUTION

Marking codes:

J210: J210.

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A and

SNW-FQ-302B.

J211: J211.

J212: J212.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

V_DS

PARAMETER

drain-source voltage

CONDITIONS

MIN.

MAX.

±25

UNIT

−

V_GSoff

gate-source cut-off voltage

I_D= 1 nA; V_DS= 15 V

J210

−1

−3

J211

−2.5

−4

−4.5

−6

J212

I_DSS

drain current

V_GS= 0; V_DS= 15 V

J210

J211

J212

−

P_tot

y_fs

total power dissipation

T_amb≤ 50 °C

400

common-source transfer admittance

V_GS= 0; V_DS= 15 V

J210

J211

J212

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

V_DS

PARAMETER

drain-source voltage

CONDITIONS

MIN.

MAX.

±25

UNIT

−

V_GSO

V_DGO

I_G

gate-source voltage

open drain

open source

−25

drain-gate voltage

forward gate current (DC)

total power dissipation

storage temperature

°C

P_tot

T_stg

T_j

_amb≤ 50 °C; note 1; see Fig.13

400

150

−65

operating junction temperature

−

°C

Note

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm².

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-a}

thermal resistance from junction to ambient; note 1

250

K/W

Note

1. Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm².

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

STATIC CHARACTERISTICS

T_j= 25 °C.

SYMBOL

PARAMETER

CONDITIONS

I_G= −1 µA; V_DS= 0

I_D= 1 nA; V_DS= 15 V

MIN.

MAX.

−25

UNIT

V_(BR)GSS

V_GSoff

gate-source breakdown voltage

−

gate-source cut-off voltage

J210

−1

−3

−4.5

−6

J211

−2.5

−4

−

J212

V_GSS

I_DSS

gate-source forward voltage

I_G= 0; V_DS= 0

drain current

V_GS= 0; V_DS= 15 V

J10

J11

J12

−

I_GSS

y_fs

reverse gate leakage current

V_GS= −15 V; V_DS= 0

−100

common-source transfer admittance

V_GS= 0; V_DS= 15 V

J210

J211

J212

y_os

common source output admittance

V_GS= 0; V_DS= 15 V

J210

J211

J212

−

150

200

µS

DYNAMIC CHARACTERISTICS

_amb= 25 °C.

SYMBOL

PARAMETER

input capacitance

CONDITIONS

V_DS= 15 V; V_GS= −10 V; f = 1 MHz

_DS= 15 V; V_GS= 0; f = 1 MHz

V_DS= 15 V; V_GS= −10 V; f = 1 MHz

_DS= 15 V; V_GS= 0; f = 1 MHz

V_DS= 15 V; V_GS= −10 V; f = 1 MHz

_DS= 15 V; V_GS= 0; f = 1 MHz

V_DS= 15 V; V_GS= 0; f = 100 MHz

_DS= 15 V; V_GS= 0; f = 450 MHz

TYP.

UNIT

C_is

C_os

C_rs

g_is

output capacitance

0.8

feedback capacitance

0.8

0.9

1.1

7.5

−8

−90

200

common source input conductance

common source transfer conductance

common source feedback conductance

common source output conductance

equivalent input noise voltage

µS

g_fs

g_rs

g_os

V_n

V_DS= 15 V; V_GS= 0; f = 100 MHz

V_DS= 15 V; V_GS= 0; f = 450 MHz

V_DS= 15 V; V_GS= 0; f = 100 MHz

_DS= 15 V; V_GS= 0; f = 450 MHz

V_DS= 15 V; V_GS= 0; f = 100 MHz

_DS= 15 V; V_GS= 0; f = 450 MHz

V_DS= 15 V; V_GS= 0; f = 1 kHz

µS

nV/√Hz

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

MGM277

MGM278

handbook, halfpage

DSS

(mA)

(mS)

−2

−4

−6

−2

−4

−6

(V)

GSoff

V_DS= 15 V; T_j= 25 °C.

Fig.3 Common-source transfer admittance as a

function of gate-source cut-off voltage;

typical values.

Fig.2 Drain current as a function of gate-source

cut-off voltage; typical values.

MGM280

MGM279

handbook, halfpage

(µS)

(mA)

= 0 V

−200 mV

−400 mV

−600 mV

−800 mV

−1 V

−1.2 V

−1.4 V

−2

−4

−6

(V)

GSoff

V_DS= 15 V; T_amb= 25 °C.

J210.

T_j= 25 °C.

Fig.4 Common-source output conductance as a

function of gate-source cut-off voltage;

typical values.

Fig.5 Output characteristics; typical values.

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

MGM281

MGM282

handbook, halfpage

(mA)

= 0 V

−200 mV

−400 mV

−600 mV

−800 mV

−1 V

−1.2 V

−1.4 V

−2.5

−2

−1.5

−1

−0.5

(V)

J210.

V_DS= 10 V; T_j= 25 °C.

J211.

T_j= 25 °C.

Fig.6 Input characteristics; typical values.

Fig.7 Output characteristics; typical values.

MGM283

MGM284

handbook, halfpage

= 0 V

(mA)

−200 mV

−400 mV

−600 mV

(mA)

−800 mV

−1 V

−1.2 V

−1.4 V

−6

−4

−2

(V)

J211.

V_DS= 10 V; T_j= 25 °C.

J212.

T_j= 25 °C.

Fig.8 Input characteristics; typical values.

Fig.9 Output characteristics; typical values.

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

MGM285

MGM286

handbook, halfpage

(pF)

(mA)

1.5

0.5

−10

−6

−4

−2

−8

−6

−4

−2

(V)

J212.

V_DS= 10 V; T_j= 25 °C.

V_DS= 15 V; f = 1 Mhz; T_amb= 25 °C.

Fig.11 Feedback capacitance as a function of

gate-source voltage; typical values.

Fig.10 Input characteristics; typical values.

MGM287

MGM290

500

handbook, halfpage

tot

(mW)

400

(pF)

300

200

100

150

−10

−8

−6

−4

−2

(V)

(°C)

amb

V_DS= 15 V; f = 1 Mhz; T_amb= 25 °C.

Fig.12 Input capacitance as a function of

gate-source voltage; typical values.

Fig.13 Power derating curve.

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

MGM289

MGM288

−10

handbook, halfpage

(µA)

(pA)

= 10 mA

−10

1 mA

−10

0.1 mA

−1

−10

−1

−2

GSS

−1

−3

−10

(V)

−4

−5

−4

−3

−2

−1

(V)

T_j= 25 °C.

V_DS= 15 V; T_j= 25 °C.

Fig.14 Drain current as a function of gate-source

voltage; typical values.

Fig.15 Gate current as a function of drain-gate

voltage; typical values.

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

MGM291

MGM292

handbook, halfpage

(mS)

−1

−b

−2

f (MHz)

V_DS= 15 V; V_GS= 0; T_amb= 25 °C.

Fig.16 Common source input admittance as a

function of frequency; typical values.

Fig.17 Common source transfer admittance as

a function of frequency; typical values.

MGM294

MGM293

handbook, halfpage

(mS)

−b

−1

−2

−3

−g

−1

−2

f (MHz)

V_DS= 15 V; V_GS= 0; T_amb= 25 °C.

Fig.18 Common source reverse admittance as

a function of frequency; typical values.

Fig.19 Common source output admittance as

a function of frequency; typical values.

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

5.2

5.0

0.48

0.40

0.66

0.56

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

14.5

12.7

2.54

1.27

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

EIAJ

97-02-28

SOT54

TO-92

SC-43

1997 Dec 01

Philips Semiconductors

Productspeciﬁcation

N-channel ﬁeld-effect transistors

J210; J211; J212

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1997 Dec 01

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

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Tel. +64 9 849 4160, Fax. +64 9 849 7811

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Belgium: see The Netherlands

Brazil: see South America

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. +65 350 2538, Fax. +65 251 6500

Colombia: see South America

Czech Republic: see Austria

Slovakia: see Austria

Slovenia: see Italy

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

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Hungary: see Austria

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TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

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Middle East: see Italy

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p,

P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA56

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

117067/00/01/pp12

Date of release: 1997 Dec 01

Document order number: 9397 750 02789

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J211产品参数

型号:	J211
是否Rohs认证：	不符合
生命周期：	Transferred
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.61
Is Samacsys：	N
FET 技术：	JUNCTION
JESD-609代码：	e0
最高工作温度：	125 °C
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.4 W
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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产品型号J211的概述

产品型号J211的Datasheet PDF文件预览

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