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产品型号JAN1N4454的Datasheet PDF文件预览

Silicon Switching Diode

DO-35 Glass Package

1N4454,

1N4454-1

Applications

Used in general purpose applications,

where performance and switching

speed are important.

DO-35 Glass Package

Lead Dia.

0.018-0.022"

0.458-0.558 mm

Features

Six sigma quality

Metallurgically bonded

Dia.

0.06-0.09"

1.0"

25.4 mm

(Min.)

Length

0.120-.200"

3.05-5.08- mm

BKC's Sigma Bond™ plating

for problem free solderability

LL-34/35 MELF SMD available

Full approval to Mil-S-19500 /144

Available up to JANTXV-1 levels

1.53-2.28 mm

"S" level screening available to Source Control Drawings

Maximum Ratings

Symbol

PIV

I_Avg

Value

75 (Min.)

200

Unit

Volts

mAmps

Amp

mWatts

^oC

Peak Inverse Voltage @ 5µA & 0.1µA @ -55^oC

AverageRectifiedCurrent

Continuous Forward Current

I_Fdc

300

Peak Surge Current (t_peak= 1 sec.)

Power Dissipation T_L= 50 ^oC, L = 3/8" from body

Operating Temperature Range

I_peak

P_tot

1.0

500

T_Op

T_St

200

Storage Temperature Range

Electrical Characteristics @ 25^oC*

-65 to +200

Limits

^oC

Symbol

V_F

Unit

Forward Voltage @ I_F= 10 mA

1.0(max)

75 (min)

Volts

µA

Breakdown Voltage @ I_R= 5 µA

Reverse Leakage Current @ V_R= 50 V

PIV

I_R

0.1 (max)

100 (max)

2.0 (max)

Reverse Leakage Current @ V_R= 50 V, T=150 C

Capacitance @ V_R= 0 V, f = 1mHz

I_R

µA

C_T

Reverse Recovery Time (note 1)/(note 2)

Forward Recovery Voltage (note 3)

t_rr

2.0/4.0 (max) nSecs

3.0 (max) Volts

V_fr

Note 1: Per Method 4031-A with I_F= I_R= 10 mA, R_L= 100 Ohms, C = 3 Pf.

Note 2: Per Method 4031-A with I_F= 10 mA, R_L= 100 Ohms, Vr = 6 V, Recover to 1.0 mA.

Note 3: Per Method 4026 with I_F= 100 mA, R_L= 50 Ohms,Peak Square wave ,100 nSec Pulse Width, tr<30 nSec,repe-

tition Rate = 5 - 100 KHz.

* Unless Otherwise Specified

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

DO-35 DERATING (175 C Tj)

DO-35 POWER DERATING CURVE

500

400

300

200

100

120

140

160

180

Temperature ( 3/8" from body) C

6 Lake Street - Lawrence, MA 01841

Tel: 978-681-0392 - Fax: 978-681-9135

型号:	JAN1N4454
生命周期：	Active
IHS 制造商：	VPT COMPONENTS
包装说明：	O-LALF-W2
Reach Compliance Code：	compliant
风险等级：	5.19
外壳连接：	ISOLATED
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	DO-35
JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0
元件数量：	1
端子数量：	2
最大输出电流：	0.2 A
封装主体材料：	GLASS
封装形状：	ROUND
封装形式：	LONG FORM
认证状态：	Not Qualified
参考标准：	MIL-19500/144
最大反向恢复时间：	0.004 µs
表面贴装：	NO
端子面层：	TIN LEAD
端子形式：	WIRE
端子位置：	AXIAL

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