MIL-PRF-19500/516D
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of
the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see
6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
MILITARY
MIL-STD-750
- Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense
Automated Printing Service, Building 4D (NPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified
herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-
PRF-19500.
V
c
(max) .........Maximum clamping voltage. The maximum peak voltage appearing across the device when subjected to the
peak pulse current I .
P
I
...............Reverse breakdown current at the specified condition.
................Reverse peak pulse power.
(BR)
P
PR
a V
............Temperature coefficient of V
.
(BR)
(BR)
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified
in MIL-PRF-19500 and herein.
3.3.1 Metallurgical bond construction. Metallurgically bonded construction is required. The silicon die shall be metallurgically
bonded to both terminal pins. The silicon die attach material shall have a solidus point ³ +350°C (i.e., must exhibit some
mechanical strength up to +350°C).
3.3.2 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and as specified herein. Where a
choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.4.1 Marking of US version devices. For US version devices only, all marking (except polarity) may be omitted from the body,
but shall be retained on the initial container.
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