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产品型号JAN2N5661的Datasheet PDF文件预览

TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 454  
Devices  
Qualified Level  
JAN, JANTX  
JANTXV  
2N5660  
2N5661  
2N5662  
2N5663  
MAXIMUM RATINGS  
Ratings  
2N5660 2N5661  
2N5662 2N5663  
Symbol  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Base Current  
200  
250  
250  
300  
400  
400  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
VCEO  
VCBO  
VCER  
VEBO  
IB  
6.0  
0.5  
2.0  
TO-66*  
(TO-213AA)  
2N5660, 2N5661  
Collector Current  
IC  
2N5660 2N5662  
2N5661 2N5663  
Total Power Dissipation  
@ TA = +250C  
@ TC = +1000C  
2.0(1)  
20(3)  
1.0(2)  
15(4)  
W
W
0C  
PT  
Operating & Storage Junction Temperature Range  
-65 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
2N5660  
2N5661  
2N5662  
2N5663  
Characteristics  
Symbol  
Unit  
TO-5*  
2N5662, 2N5663  
R
R
Thermal Resistance, Junction-to-Case  
Junction-to-Ambient  
qJC  
0C/W  
5.0  
87.5  
6.67  
145.8  
qJA  
1) Derate linearly 11.4 mW/0C for TA >+ 250C  
2) Derate linearly 5.7 mW/0C for TA > +250C  
3) Derate linearly 200 mW/0C for TC > +1000C  
4) Derate linearly 150 mW/0C for TC > +1000C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
200  
300  
Vdc  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CEO  
Collector-Base Breakdown Voltage  
250  
400  
Vdc  
Vdc  
IC = 10 mAdc, RBE = 100W  
2N5660, 2N5662  
2N5661, 2N5663  
V(BR)  
CER  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
6.0  
V(BR)  
EBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  
2N5660, 2N5661, 2N5662, 2N5663 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
Collector-Emitter Cutoff Current  
Symbol  
Min.  
Max.  
Unit  
0.2  
0.2  
mAdc  
mAdc  
VCE = 200 Vdc  
VCE = 300 Vdc  
2N5660, 2N5662  
2N5661, 2N5663  
ICES  
Collector-Base Cutoff Current  
VCB = 200 Vdc  
VCB = 250 Vdc  
VCB = 300 Vdc  
VCB = 400 Vdc  
0.1  
1.0  
0.1  
1.0  
mAdc  
mAdc  
mAdc  
mAdc  
2N5660, 2N5662  
2N5660, 2N5662  
2N5661, 2N5663  
2N5661, 2N5663  
ICBO  
ON CHARACTERISTICS (5)  
Forward-Current Transfer Ratio  
IC = 50 mAdc, VCE = 2.0 Vdc  
2N5660, 2N5662  
2N5661, 2N5663  
2N5660, 2N5662  
2N5661, 2N5663  
All Types  
40  
25  
40  
25  
15  
5.0  
IC = 0.5 Adc, VCE = 5.0 Vdc  
120  
75  
hFE  
IC = 1.0 Adc, VCE = 5.0 Vdc  
IC = 2.0 Adc, VCE = 5.0 Vdc  
All Types  
Collector-Emitter Saturation Voltage  
IC = 1.0 Adc, IB = 0.1 Adc  
IC = 2.0 Adc, IB = 0.4 Adc  
Base-Emitter Saturation Voltage  
IC = 1.0 Adc, IB = 0.1 Adc  
IC = 2.0 Adc, IB = 0.4 Adc  
0.4  
0.8  
Vdc  
Vdc  
VCE(sat)  
1.2  
1.5  
VBE(sat)  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
IC = 0.1 Adc, VCE = 5.0 Vdc, f = 10 MHz  
Output Capacitance  
2.0  
7.0  
45  
½hfe½  
pF  
Cobo  
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz  
SWITCHING CHARACTERISTICS  
Turn-On Time  
ton  
ms  
ms  
0.25  
0.25  
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 15 Adc  
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = 25 Adc  
Turn-Off Time  
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 15 Adc 2N5660, 2N5662  
VCC = 100 Vdc; IC = 0.5 Adc; IB1 = -IB2 = 25 Adc 2N5661, 2N5663  
2N5660, 2N5662  
2N5661, 2N5663  
toff  
0.85  
1.2  
SAFE OPERATING AREA  
DC Tests  
TC = +1000C, 1 Cycle, t ³ 1.0 s  
Test 1  
VCE = 10 Vdc, IC = 2.0 Adc  
VCE = 7.5 Vdc, IC = 2.0 Adc  
2N5660, 2N5661  
2N5662, 2N5663  
Test 2  
VCE = 40 Vdc, IC = 500 mAdc  
VCE = 25 Vdc, IC = 600 mAdc  
2N5660, 2N5661  
2N5662, 2N5663  
Test 3  
VCE = 200 Vdc, IC = 36 mAdc  
VCE = 200 Vdc, IC = 27 mAdc  
2N5660  
2N5662  
Test 4  
VCE = 300 Vdc, IC = 19 mAdc  
VCE = 300 Vdc, IC = 14 mAdc  
2N5661  
2N5663  
(5) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  
配单直通车
JAN2N5661产品参数
型号:JAN2N5661
是否Rohs认证: 不符合
生命周期:Obsolete
包装说明:,
Reach Compliance Code:unknown
风险等级:5.66
Is Samacsys:N
最大集电极电流 (IC):1 A
配置:Single
最小直流电流增益 (hFE):25
JESD-609代码:e0
最高工作温度:200 °C
极性/信道类型:NPN
最大功率耗散 (Abs):20 W
子类别:Other Transistors
表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):20 MHz
Base Number Matches:1
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