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产品型号JANTX2N3251A的概述

芯片JANTX2N3251A的概述 JANTX2N3251A是一款由美国国防部认证的高可靠性晶体管，属于NPN型功率晶体管。这款芯片采用适用于航天、军事及工业领域的材料和工艺，确保其在极端环境中的性能稳定性。JANTX2N3251A在高频功率放大器及开关应用中表现优异，尤其在需要高增益和优良线性度的场合，成为工程师们的首选。该芯片的封装类型为TO-218，能够符合多种环境条件下的使用需求。它的使用温度范围广，确保各种苛刻应用中保持良好的电气特性。此外，JANTX2N3251A的电压和电流能力也使其适用于多种设备，如雷达、通信系统及电源管理等。芯片JANTX2N3251A的详细参数 - 器件类型: NPN功率晶体管 - 最大集电极-发射极电压 (Vce): 65V - 最大集电极电流 (Ic): 5A - 功耗 (Ptot): 45W - 增益带宽产品 (fT): 200MHz - ...

产品型号JANTX2N3251A的Datasheet PDF文件预览

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PNP SILICON

LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/323

DEVICES

LEVELS

2N3250A

2N3251A

JAN

2N3250AUB

2N3251AUB

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

60

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

60

Vdc

5.0

Vdc

Collector Current

200

mAdc

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽¹⁾

0.36

1.2

P_T

W

Operating & Storage Junction Temperature Range

T_J, T_stg

-65 to +200

°C

TO-39 (TO-205AD)

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

(1)

Thermal Resistance, Junction-to-Case

150

°C/W

R_θJC

Note:

1/ Consult 19500/323 for thermal curves

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

Symbol

V_(BR)CEO

I_CEX

Min.

Max.

Unit

60

Vdc

Collector-Emitter Cutoff Voltage

V

_BE= 3.0Vdc, V_CE= 40Vdc

20

ηAdc

μAdc

UB Package

V_BE= 3.0Vdc, V_CE= 40Vdc

T_A= 150°C

Collector-Base Cutoff Current

10

20

μAdc

ηAdc

V

_CB= 60Vdc

I_CBO

V_CB= 40Vdc

Emitter-Base Cutoff Current

I_EBO

10

50

μAdc

ηAdc

V

_EB= 5.0Vdc

Collector-Emitter Cutoff Voltage

I_BEX

V

_BE= 3.0Vdc, V_CE= 40Vdc

T4-LDS-0093 Rev. 2 (101243)

Page 1 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted) (CONT.)

Parameters / Test Conditions

ON CHARACTERTICS ⁽²⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 0.1mAdc, V_CE= 1.0Vdc

2N3250A, AUB

2N3251A, AUB

40

80

I_C= 1.0mAdc, V_CE= 1.0Vdc

I_C= 10mAdc, V_CE= 1.0Vdc

I_C= 50mAdc, V_CE= 1.0Vdc

2N3250A, AUB

2N3251A, AUB

45

90

2N3250A, AUB

2N3251A, AUB

50

100

150

300

h_FE

2N3250A, AUB

2N3251A, AUB

15

30

I_C= 1.0mAdc, V_CE= 1.0Vdc

T_A= -55°C

2N3250A, AUB

2N3251A, AUB

20

40

Collector-Emitter Saturation Voltage

I_C= 10mAdc, I_B= 1.0mAdc

I_C= 50mAdc, I_B= 5.0mAdc

0.25

0.50

V_CE(sat)

Vdc

Base-Emitter Saturation Voltage

I_C= 10mA, I_B= 1.0mAdc

I_C= 50mA, I_B= 5.0mAdc

0.60

0.90

1.20

V_BE(sat)

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 1.0mAdc, V_CE= 10Vdc, f = 1.0kHz 2N3250A, AUB

2N3251A, AUB

50

100

200

400

h_fe

Magnitude of Common Emitter Small-Signal Short-Circuit Forward

Current Transfer Ratio

|h_fe|

I_C= 10mAdc, V_CE= 20Vdc, f = 100kHz

2N3250A, AUB

2N3251A, AUB

2.5

3.0

9.0

Output Capacitance

C_obo

pF

6.0

8.0

V_CB= 10Vdc, I_E= 0, 100 kHz ≤ f ≤ 1.0MHz

Input Capacitance

V_EB= 1.0Vdc, I_C= 0, 100 kHz ≤ f ≤ 1.0MHz

C_ibo

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Turn-On Time

V_CC= 3.0Vdc; I_C= 10mAdc; I_B1= 1.0mAdc

Symbol

Min.

Max.

Unit

ηs

t_on

70

Turn-Off Time

V_CC= 3.0Vdc; IC = 10mAdc; I_B1= I_B2

1.0mAdc

=

2N3250A, AUB

2N3251A, AUB

250

300

t_off

ηs

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%

T4-LDS-0093 Rev. 2 (101243)

Page 2 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

PACKAGE DIMENSIONS

Dimensions

Inches Millimeters

Symbol

Notes

Min Max Min

.178 .195 4.52

.170 .210 4.32

.209 .230 5.31

Max

4.95

5.33

5.74

CD

CH

HD

LC

LD

LL

LU

L1

L2

P

.100TP

2.54 TP

6

.016 .021 0.41

0.53

7, 8

.500 .750 12.70 19.05

.016 .019 0.41

.050

0.48

1.27

.250

.100

6.35

2.54

Q

.040

1.02

1.22

1.17

0.25

5

3, 4

3

TL

TW

r

.028 .048 0.71

.036 .046 0.91

.010

10

6

α

45° TP

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)

radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by

direct methods or by the gauge and gauging procedure shown in figure 2.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled

in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-18).

T4-LDS-0093 Rev. 2 (101243)

Page 3 of 4

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Dimensions

Ltr.

Inches

Millimeters

Note

Ltr.

Inches

Min

.035

0.71

.016

Millimeters

Note

Min Max Min Max

.046 .056 1.17 1.42

.115 .128 2.92 3.25

.085 .108 2.16 2.74

Max

.039

.079

.024

.008

.012

.022

Min

Max

0.99

2.01

0.61

0.20

0.31

0.56

BH

BL

BW

CL

CW

LL₁

LL₂

LS₁

LS₂

LW

r

r₁

r₂

0.89

1.80

0.41

.128

.108

3.25

2.74

.022 .038 0.56 0.96

.017 .035 0.43 0.89

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (UB version).

T4-LDS-0093 Rev. 2 (101243)

Page 4 of 4

JANTX2N3251A相关产品

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型号:	JANTX2N3251A
生命周期：	Obsolete
IHS 制造商：	MOTOROLA INC
包装说明：	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.21.00.75
风险等级：	5.09
Is Samacsys：	N
最大集电极电流 (IC)：	0.2 A
基于收集器的最大容量：	6 pF
集电极-发射极最大电压：	60 V
配置：	SINGLE
最小直流电流增益 (hFE)：	30
JEDEC-95代码：	TO-206AA
JESD-30 代码：	O-MBCY-W3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	200 °C
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	CYLINDRICAL
极性/信道类型：	PNP
功耗环境最大值：	1.2 W
认证状态：	Not Qualified
参考标准：	MIL
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	WIRE
端子位置：	BOTTOM
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	300 MHz
最大关闭时间（toff）：	250 ns
最大开启时间（吨）：	70 ns
VCEsat-Max：	0.5 V
Base Number Matches：	1

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