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产品型号JANTX2N3439的概述

芯片JANTX2N3439的概述 JANTX2N3439是一种高频功率晶体管，广泛应用于射频放大器和开关电源等领域。作为一种NPN晶体管，其具备优异的电流增益和频率特性，能够满足高频信号处理的需求。该器件通常被用于通信设备、消费类电子产品以及军事应用中，凭借其高可靠性和稳定性而受到青睐。在现代电子技术中，采用高频晶体管是提高设备性能的重要手段。JANTX2N3439作为一种典型的高频功率晶体管，其特别设计用于支持高效率的信号放大和处理。它的工作范围涵盖了多个应用场合，特别是面对高温和其他恶劣工作环境的能力，使其成为特殊环境下电子设备的理想选择。芯片JANTX2N3439的详细参数根据公开资料，JANTX2N3439的主要技术参数如下： 1. 类型: NPN功率晶体管 2. 最大结温（Tj）: 200°C 3. 最大集电极电压（Vce）: 50V 4. 最大集电极电流（Ic）: 3...

产品型号JANTX2N3439的Datasheet PDF文件预览

INCH-POUND

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 8 October 2002.

MIL-PRF-19500/368F

8 July 2002

SUPERSEDING

MIL-PRF-19500/368E

24 August 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER

TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device types as specified in

MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),

figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).

* 1.3 Maximum ratings. Unless otherwise specified, T_A= +25°C.

Types

and T

(1)

(2)

θJA

CBO

EBO

CEO

STG

= +25°C

V dc

450

V dc

350

A dc

1.0

°C

°C/W

2N3439, 2N3439L,

2N3439UA

0.8

5.0

-65 to +200

325

2N3440, 2N3440L

2N3440UA

0.8

5.0

300

250

1.0

325

(1) Derate linearly 5.7 mW/°C for T_A> +60°C.

(2) Derate linearly 28.6 mW/°C for T_C> +25°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,

P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal

(DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/368F

1.4 Primary electrical characteristics.

h_FE2(1)

h_FE1(1)

|h_fe|

C_obo

V_BE(sat)(1)

V_CE(sat)

V_CE= 10 V

I_C= 2 mA dc

V_CE= 10 V dc

I_C= 20 mA dc

_CE= 10 V dc

_CB= 10 V dc

I_C= 50 mA dc

I_B= 4 mA dc

I_C= 50 mA dc

I_B= 4 mA dc

I_C= 10 mA dc

f = 5 MHz

I_E= 0

100 kHz ≤ f ≤ 1

MHz

V dc

1.3

V dc

0.5

Min

Max

160

(1) Pulsed, (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

HANDBOOK

DEPARTMENT OF DEFENSE

MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/368F

FIGURE 1. Physical dimensions (similar to TO-5 and TO-39).

MIL-PRF-19500/368F

Dimensions

Symbol

Notes

Inches

Millimeters

Min

.305

.240

.335

.016

Max

.335

.260

.370

.021

Max

8.51

6.60

9.40

0.53

7.75

6.10

8.51

0.41

3, 10

See notes 10, 12, and 13

.050

1.27

0.48

.016

.019

0.41

4, 10

.1414 Nom

.0707 Nom

.100

3.591 Nom

1.796 Nom

2.54

.029

.028

.045

.034

0.74

0.71

1.14

0.86

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.

4. Measured in the zone .50 inch (1.27 mm) from the seating plane.

5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).

6. Outline in this zone is not controlled.

7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of

the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a

maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead

tolerance.

8. The collector shall be electrically connected to the case.

9. Measured from the maximum diameter of the actual device.

10. All three leads (see 3.4.1).

11. Diameter of leads in this zone is not controlled.

12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)

maximum.

13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches

(44.45 mm) maximum.

FIGURE 1. Physical dimensions - Continued.

MIL-PRF-19500/368F

Ltr

Inches

Max

Millimeters

Min

.038

Max

1.12

.044

0.97

.044

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. The physical characteristics of the die thickness are, .006 inch (0.15 mm) to .012 inch (0.30 mm).

Metallization, top: Al = 17,500 Å minimum, 20,000 Å nominal.

Back: Au = 2,500 Å minimum, 3,000 Å nominal.

Bonding pad: B = .004 inch (0.10 mm) by .005 inch (0.13 mm).

E = .004 inch (0.10 mm) by .005 inch (0.13 mm).

4. Backside is collector.

5. Requirements in accordance with MIL-PRF-19500 are performed in a TO-5 package.

* FIGURE 2. Physical dimensions JANHCA and JANKCA (die) A versions.

MIL-PRF-19500/368F

1. Chip size................................. .040 x .040 inch ±.002 inch (1.02 mm x 1.02 mm ±0.05 mm).

2. Chip thickness........................ .010 ± .0015 inch nominal (0.254 mm ±0.038 mm).

3. Top metal................................ Aluminum 30,000Å minimum, 33,000Å nominal.

4. Back metal............................... A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅminimum,15kÅ/ 5kÅ/10kÅ/10kÅ nominal.

B. Gold 2.500Å minimum, 3000Å nominal.

5. Backside................................. Collector.

6. Bonding pad........................... B = .005 x .008 inch (0.127 mm x 0.203 mm).

E = .010 x .007 inch (0.254 mm x 0.178 mm).

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

FIGURE 3. Physical dimensions JANHCB and JANKCB (die) B versions.

MIL-PRF-19500/368F

Dimensions

Millimeters

Symbol

Inches

Min

.061

.029

.022

Note

Max

.075

.041

.028

Min

1.55

0.74

0.56

Max

1.90

1.04

0.71

.075 REF

1.91 REF

.006

.145

.045

.022

.155

.055

0.15

3.68

1.14

0.56

3.93

1.39

.0375 BSC

.952 BSC

.155

.225

.048

.088

.007

3.93

5.71

1.22

2.23

0.18

.215

5.46

.032

.072

.003

0.81

1.83

0.08

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must

increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).

4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the

drawing.

5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed

three-dimensional space traversing all of the ceramic layers in which a castellation was designed.

(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum

and "L3" maximum define the maximum width and depth of the castellation at any point on its surface.

Measurement of these dimensions may be made prior to solder dipping.

* FIGURE 4. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.

MIL-PRF-19500/368F

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, MIL-HDBK-6100 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCA and JANKCA, (A

versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount

versions).

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking

may be omitted from the body, but shall be retained on the initial container.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II

herein.

* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the associated specification that did not request the

performance of table II tests, the tests specified in table II herein shall be performed by the next inspection lot to this

revision to maintain qualification.

MIL-PRF-19500/368F

* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500

and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that

exceed the limits of table I herein shall not be acceptable.

Screen

Measurement

(see table IV

of MIL-PRF-19500)

JANS level

Thermal impedance (see 4.3.3)

Hermetic seal (optional)

JANTX and JANTXV levels

Thermal impedance (see 4.3.3)

(1)

Not applicable

and h

FE1

CBO1

48 hours minimum

; h ; ∆I

48 hours minimum

and h

FE1

= 100 percent of initial value

CB01

CBO1 FE1

CBO1

or 0.5 µA dc, whichever is greater;

∆h = ± 15 percent of initial value.

FE1

See 4.3.2, 240 hours minimum

See 4.3.2, 80 hours minimum

Subgroup 2 of table I herein;

Subgroups 2 and 3 of table I herein;

∆I

= 100 percent of initial value or 200 nA

∆I

= 100 percent of initial value or 200 nA dc,

CB01

dc, whichever is greater;

whichever is greater;

∆h = ± 15 percent of initial value.

FE1

Optional

Optional (1)

(1) Hermetic seal test shall be performed in either screen 7 or screen 14.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the

requirements of table I, group A, subgroup 2.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: V_CB= 10 - 30 V dc. Power shall be

applied to achieve T_J= +135°C minimum using a minimum P_D= 75 percent of P_Tmaximum rated as defined in 1.3.

4.3.3 Thermal impedance (Z_θ_JXmeasurements). The Z_θ_JXmeasurements shall be performed in accordance with

method 3131 MIL-STD-750. Read and record data (Z_θ_JX) shall be supplied to the qualifying activity on one lot

(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.

a. I_Hforward heating current ----------- 250 mA.

b. t_Hheating time -------------------------- 10 ms.

c. I_Mmeasurement current -------------- 10 mA.

d. t_MDmeasurement delay time ------- 30 - 60 µs.

e. V_CEcollector-emitter voltage ------- 10 V dc minimum.

The maximum limit for Z_θJXunder these test conditions are Z_θJX(max) = 20 °C/W.

MIL-PRF-19500/368F

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of

screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in VIa (JANS) of 4.4.2.1 herein. Electrical measurements (end-points) requirements shall be in

accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in accordance with 4.5.3 herein.

See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points)

requirements shall be in accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in

accordance with 4.5.3 herein.

* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

1037

Condition

V_CB= 10 V dc, 2,000 cycles.

1027

V_CB= 10-30 V dc; P_D≥ 100 percent of maximum rated P_T(see 1.3).

(NOTE: If a failure occurs, resubmission shall be at the test conditions of the

original sample.)

Option 1: 96 hrs min, sample size in accordance with table Via of

MIL-PRF-19500, adjust T_Aor P_Dto achieve T_J= +275°C minimum.

Option 2: 216 hrs min., sample size = 45, c = 0; adjust T_Aor P_Dto achieve

T_J= +225°C minimum.

MIL-PRF-19500/368F

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot

or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed

assembly lot shall be scrapped.

Step

Method Condition

1039

1032

Steady-state life: Test condition B, 340 hours, V_CB= 10 - 30 V dc, power shall be applied to

achieve T_J= +150°C minimum using a minimum of P_D= 75 percent of maximum rated P_Tas

defined in 1.3. n = 45 devices, c = 0.

The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.

Samples shall be selected from a wafer lot every twelve months of wafer production, however,

group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.

High-temperature life (non-operating), t = 340 hours, T_A= +200°C. n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection

lot. See MIL-PRF-19500.

b. Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in

accordance with table I, group A, subgroup 2 and 4.5.3 herein.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup

Method

2036

Condition

Test condition E, except the UA package.

1026

1,000 hours at V_CB= 10 V dc; power shall be applied to achieve

T_J= +150°C minimum and a minimum of P_D= 75 percent of maximum

rated P_Tas defined in 1.3.

* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

Method

2036

Condition

Test condition E.

See 4.5.2.

3131

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot

containing the intended package type and lead finish procured to the same specification which is submitted to and

passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the

intended package type shall be considered as complying with the requirements for that subgroup.

MIL-PRF-19500/368F

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical

measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements

shall be in accordance with the steps of 4.5.3.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131

of MIL-STD-750. The following conditions shall apply:

a. Collector current magnitude during power application shall be 150 mA dc for R_θJC

b. Collector emitter voltage magnitude shall be 10 V dc.

c. Reference temperature measuring point shall be the case.

d. Reference temperature measuring point shall be +25°C ≤ T_R≤ +35°C. The chosen reference

temperature shall be recorded before the test is started.

e. Mounting arrangement shall be with heat sink to case for R_θJC

Maximum limit shall be R_θJC= 35°C/W.

* 4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Conditions

Symbol

Unit

Method

3036

Collector-base cutoff

current

Bias condition D,

V_CB= 360 V dc for 2N3439, 2N3439L,

2N3439UA

100 percent of initial

value or 200 nA dc,

whichever is greater.

∆I_CB01

(1)

V_CB= 250 V dc for 2N3440, 2N3440L,

2N3440UA

Forward current

transfer ratio

3076

V_CE= 10 V dc;

I_C= 20 mA dc;

∆h_FE1

(1)

±15 percent change

from initial reading.

pulsed see 4.5.1

(1) Devices which exceed the table I, group A limits for this test shall not be accepted.

MIL-PRF-19500/368F

* TABLE I. Group A inspection.

Inspection 1/

Subgroup 1 2/

MIL-STD-750

Conditions

Symbol

Limit

Unit

Min

Max

Visual and mechanical 3/

examination

2071

n = 45 devices, c = 0

Solderability 3/ 4/

2026

1022

n = 15 leads, c = 0

Resistance to 3/ 4/ 5/

solvent

n = 15 devices, c = 0

Temp cycling 3/ 4/

Heremetic seal 4/

1051

1071

Test condition C, 25 cycles.

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical measurements 4/

Bond strength 3/ 4/

Group A, subgroup 2

2037

2075

Precondition T = +250°C at t = 24 hrs

or T = +300°C at t = 2 hrs,

n = 11 wires, c = 0

Decap internal visual (design

verification) 4/

n = 4 devices, c = 0

Subgroup 2

Emitter to base cutoff current

3061

3041

µA dc

Bias condition D, V = 7 V dc

EBO1

Collector to emitter cutoff

Bias condition D

CEO

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

= 300 V dc

= 200 V dc

Collector to emitter cutoff

current

3041

3036

µA dc

Bias condition A, V = -1.5 V dc

CEX

= 450 V dc

= 300 V dc

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

Collector to base cutoff

current

Bias condition D

CBO1

= 360 V dc

= 250 V dc

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

See footnotes at end of table.

MIL-PRF-19500/368F

* TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Symbol

Limit

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

CBO2

Collector to base cutoff

current

3036

Bias condition D

µA dc

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

= 450 V dc

= 300 V dc

Base emitter voltage

(nonsaturated)

3066

3071

Test condition A, pulsed (see 4.5.1),

= 50 mA dc, I = 4 mA dc

1.3

0.5

V dc

BE(sat)

Collector to emitter voltage

(saturated)

Pulsed (see 4.5.1), I = 50 mA dc,

CE(sat)

= 4 mA dc

Forward-current transfer

ratio

3076

160

Pulsed (see 4.5.1), V = 10 V dc,

FE1

= 20 mA

Forward-current transfer

ratio

3076

Pulsed (see 4.5.1), V_CE= 10 V dc,

I_C= 2 mA

FE2

Forward-current transfer

ratio

Pulsed (see 4.5.1), V = 10 V dc,

FE3

= 0.2 mA

Subgroup 3

= +150°C

High temperature

operation:

Collector to emitter cutoff

current

3036

Bias condition D

100

µA dc

CB03

= 360 V dc

= 250 V dc

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

Low temperature operation:

Forward-current transfer ratio

T_A= -55°C

= 10 V dc, I = 20 mA dc,

3076

3251

FE4

pulsed (see 4.5.1)

Subgroup 4

Pulse response:

Turn-on time

Test condition A

µs

= 200 V dc, I = 20 mA dc,

= 2 mA dc, see figure 5

Turn-off time

= 200 V dc, I = 20 mA dc,

off

= -I = 2 mA dc, see figure 5

See footnotes at end of table.

MIL-PRF-19500/368F

* TABLE I. Group A inspection - Continued.

MIL-STD-750

Inspection 1/

Symbol

Limit

Unit

Method

Conditions

Min

Max

Subgroup 4 - Continued

Magnitude of common- emitter

small-signal short-circuit forward-

current transfer ratio

3306

= 10 V dc, I = 10 mA dc,

|h |

f = 5 MHz

Open capacitance input open

circuited

3236

3206

3240

= 10 V dc, I = 0,

obo

100 kHz ≤ f ≤ 1 MH

Small-signal short- circuit forward-

current transfer ratio

= 10 V dc, I = 5 mA,

f = 1 kHz

Input capacitance (output open

circuited)

= 5 V dc, I = 0,

ibo

100 kHz ≤ f ≤ 1 MHz

Subgroup 5

Safe operating area (continuous dc)

3051

(See figure 6) T = +25°C, 1 cycle,

t = 1.0 s.

Test 1

= 5 V dc, I = 1 A dc

Test 2

Only 2N3439, 2N3439L, 2N3439UA

= 350 V dc, I = 14 mA dc

Test 3

= 250 V dc, I = 20 mA dc

Only 2N3440, 2N3440L, 2N3440UA

Electrical measurements

See table I, subgroup 2 and 4.5.3

herein.

Breakdown voltage, collector to

emitter

3011

V dc

= 10 mA, R

= 470 ohms

BR(CEO)

BB1

= 6 V, L = 25 mH minimum

BB1

f = 30 to 60 Hz

2N3439, 2N3439L, 2N3439UA

2N3440, 2N3440L, 2N3440UA

350

250

1/ For sampling plan, see MIL-PRF-19500.

2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.

3/ Separate samples may be used.

4/ Not required for JANS.

5/ Not required for laser marked devices.

MIL-PRF-19500/368F

* TABLE II. Group E inspection (all quality levels) - for qualification only.

MIL-STD-750

Inspection

Qualification

Method

Conditions

Subgroup 1

45 devices

c = 0

Temperature cycling

(air to air)

1051

1071

Test condition C, 500 cycles

Hermetic seal

Fine leak

Gross leak

Electrical measurements

Subgroup 2

See table I, group A, subgroup 2.

45 devices

c = 0

Intermittent life

1037

Intermittent operation life: V_CB≥ 10 V dc, 6000 cycles

Electrical measurements

Subgroups 3, 4, 5, 6, and 7

Not applicable

See table I, group A, subgroup 2.

Subgroup 8

45 devices

c = 0

Reverse stability

1033

Condition A for devices ≥ 400 V, condition B for devices <

400 V.

MIL-PRF-19500/368F

NOTES:

1. The rise time (t_r) and fall time (t_f) of applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent,

generator source impedance shall be 50 ohms, pulse width = 20 µs.

2. Output sampling oscilloscope: Z_IN≥ 100 kΩ, C_IN≤ 50 pF, and rise time ≤ 1.0 µs.

FIGURE 5. Pulse response test circuit.

MIL-PRF-19500/368F

NOTE: Also applies to the corresponding "L" and "UA" suffix devices.

* FIGURE 6. Maximum safe operating graph (continuous dc).

MIL-PRF-19500/368F

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to

contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements

are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,

or within the Military Department's System Command. Packaging data retrieval is available from the managing

Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the

responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Title, number, and date of this specification.

b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents

referenced (see 2.2.1).

c. Packaging requirements (see 5.1).

d. Lead finish (see 3.4.1).

e. Type designation and quality assurance level.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000.

MIL-PRF-19500/368F

* 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example JANHCA2N3439) will be identified on the QML.

Die ordering information

Manufacturer

33178

43611

2N3439

2N3440

JANHCA2N3439

JANKCA2N3439

JANHCB2N3439

JANKCB2N3439

JANHCA2N3440

JANKCA2N3440

JANHCB2N3440

JANKCB2N3440

6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Air Force - 11

DLA - CC

Preparing activity:

DLA - CC

(Project 5961-2607)

Review activities:

Army - AR, MI, SM

Navy - AS, MC

Air Force - 19, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on

current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced

document(s) or to amend contractual requirements.

1. DOCUMENT NUMBER

MIL-PRF-19500/368F

2. DOCUMENT DATE

8 July 2002

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L,

2N3439UA, 2N3440, 2N3440L, AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

c. ADDRESS (Include Zip Code)

b. ORGANIZATION

d. TELEPHONE (Include Area Code)

7. DATE SUBMITTED

COMMERCIAL

DSN

FAX

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

614-692-0510

a. Point of Contact

Alan Barone

DSN

850-0510

FAX

614-692-6939

alan.barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus,

ATTN: DSCC-VAC

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533

P.O. Box 3990

Fort Belvoir, VA 22060-6221

Columbus, OH 43216-5000

Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG)

Previous editions are obsolete

WHS/DIOR, Feb 99

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JANTX2N3439产品参数

型号:	JANTX2N3439
生命周期：	Active
零件包装代码：	TO-5
包装说明：	CYLINDRICAL, O-MBCY-W3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	5.73
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	350 V
配置：	SINGLE
最小直流电流增益 (hFE)：	40
JESD-30 代码：	O-MBCY-W3
元件数量：	1
端子数量：	3
最高工作温度：	200 °C
最低工作温度：	-65 °C
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	CYLINDRICAL
极性/信道类型：	NPN
认证状态：	Qualified
参考标准：	MIL-19500/368F
表面贴装：	NO
端子形式：	WIRE
端子位置：	BOTTOM
晶体管元件材料：	SILICON
最大关闭时间（toff）：	10000 ns
最大开启时间（吨）：	1000 ns
Base Number Matches：	1

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