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产品型号JANTX2N6782的概述

芯片JANTX2N6782概述 JANTX2N6782是一款高频、高功率器件，属于NPN型双极性晶体管（BJT）。该芯片主要用于高频放大、开关应用和高功率射频（RF）应用，是众多通信设备的核心元件之一。JANTX2N6782具有良好的稳定性和可靠性，特别适用于军用和航空航天等恶劣环境下的应用。详细参数 JANTX2N6782具有以下主要参数： - 结构类型：NPN - 最大集电极-发射极电压（Vce）：100V - 最大集电极电流（Ic）：5A - 最大功耗（Ptot）：100W - 增益带宽积（fT）：2.4GHz - 直流电流增益（hFE）：40到320（在Ic=3A时） - 工作温度范围：-55°C至+150°C - 封装类型：TO-3（金属封装）这些参数显示了JANTX2N6782在高频应用中的能力，使其能在各种极端条件下工作同时保持优良的电性能。厂家、包装与封装 JA...

产品型号JANTX2N6782的Datasheet PDF文件预览

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Provisional Data Sheet No. PD-9.423B

JANTX2N6782

JANTXV2N6782

[REF:MIL-PRF-19500/556]

HEXFET^®POWER MOSFET

[GENERIC:IRFF110]

N-CHANNEL

100 Volt, 0.60Ω HEXFET

Product Summary

Part Number

JANTX2N6782

JANTXV2N6782

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

100V

0.60Ω

3.5A

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6782, JANTXV2N6782 Units

@ V

= 10V, T = 25°C Continuous Drain Current

3.5

@ V

= 10V, T = 100°C Continuous Drain Current

2.25

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.12

dv/dt

±20

5.5

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

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JANTX2N6782, JANTXV2N6782 Device

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

100

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = 1.0 mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.10

DSS

Voltage

➃

= 10V, I = 2.25A

GS D

Static Drain-to-Source

On-State Resistance

Gate Threshold Voltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

2.0

0.8

—

0.60

0.69

4.0

—

DS(on)

Ω

S ( )

= 10V, I = 3.5A

GS D

= V , I = 250µA

DS D

GS(th)

> 15V, I

Ω

= 2.25A ➃

= 0.8 x Max Rating,V

= 0V

DSS

= 0.8 x Max Rating

µA

—

250

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

—

4.1

0.4

1.4

—

5.0

100

-100

6.5

1.6

3.5

—

= 20V

GSS

= -20V

GSS

= 10V, I = 3.5A

= Max. Rating x 0.5

see figures 6 and 13

V = 50V, I = 3.5A,

d(on)

= 7.5Ω, VGS= 10V

d(off)

see figure 10

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Modified MOSFET

symbol showing the

internal inductances.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

15.0

—

Input Capacitance

Output Capacitance

ReverseTransfer Capacitance

—

180

—

= 0V, V

f = 1.0 MHz

see figure 5

= 25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

—

3.5

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

—

1.5

180

2.0

µC

T = 25°C, I = 3.5A, V

= 0V ➃

T = 25°C, I = 3.5A, di/dt ≤ 100A/µs

≤ 50V ➃

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

—

8.3

thJC

thJA

Junction-to-Ambient

—

175

K/W

Typical socket mount

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JANTX2N6782, JANTXV2N6782 Device

Fig. 1 — Typical Output Characteristics

T_C= 25°C

Fig. 2 — Typical Output Characteristics

T_C= 150°C

Fig. 3 — Typical Transfer Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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JANTX2N6782, JANTXV2N6782 Device

Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 8 — Maximum Safe Operating Area

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 10b — Switching Time Waveforms

Fig. 10a — Switching Time Test Circuit

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JANTX2N6782, JANTXV2N6782 Device

Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12b — Unclamped Inductive Waveforms

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 13a — Gate Charge Test Circuit

Fig. 13b — Basic Gate Charge Waveform

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JANTX2N6782, JANTXV2N6782 Device

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

(see figure 11)

➂ I

≤ 3.5A, di/dt ≤ 75A/µs,

≤ BV , T ≤ 150°C

DSS

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➁ @ V

= 25V, Starting T = 25°C,

➄ K/W = °C/W

= [0.5

(I ²) [BV

/(BV

-V )]

W/K = W/°C

DSS

= 10V, 25 ≤ R ≤ 200Ω

DSS DD

Peak I = 3.5A, V

Case Outline and Dimensions — TO-205AF (TO-39)

All dimensions are shown millimeters (inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

10/96

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JANTX2N6782产品参数

型号:	JANTX2N6782
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
包装说明：	,
Reach Compliance Code：	unknown
风险等级：	5.75
Is Samacsys：	N
配置：	Single
最大漏极电流 (Abs) (ID)：	3.5 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	15 W
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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产品型号JANTX2N6782的概述

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