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产品型号JANTX2N718A的Datasheet PDF文件预览

TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
NPN LOW POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/181  
DEVICES  
LEVELS  
JAN  
2N718A  
2N1613  
2N1613L  
JANTX  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Min.  
30  
Unit  
Vdc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
75  
Vdc  
7.0  
500  
Vdc  
mAdc  
TO-18 (TO-206AA)  
2N718A  
Total Power Dissipation  
@ TA = +25°C  
2N718A  
2N1613, L  
0.5  
0.8  
PT  
W
Total Power Dissipation  
@ TC = +25°C  
2N718A  
2N1613, L  
1.8  
3.0  
PT  
W
°C  
Operating & Storage Junction Temperature Range  
TJ, Tstg  
RθJC  
-65 to +200  
Thermal Resistance, Junction-to-Case 2N718A  
2N1613, L  
97  
58  
°C/W  
(1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for TA > +25°C  
(2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for TC > +25°C  
TO-39 (TO-205AD)  
2N1613  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100µAdc  
V(BR)CEO  
V(BR)CER  
30  
50  
Vdc  
Vdc  
Collector-Emitter Breakdown Voltage  
IC = 100µAdc, RBE = 10  
Collector-Base Cutoff Current  
10  
10  
ηAdc  
µAdc  
V
CB = 60Vdc  
ICBO  
VCB = 75Vdc  
Emitter-Base Cutoff Current  
TO-5  
2N1613L  
10  
10  
ηA dc  
µAdc  
V
V
EB = 5.0Vdc  
EB = 7.0Vdc  
IEBO  
T4-LDS-0200 Rev. 1 (110597)  
Page 1 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
ON CHARACTERISTICS (3)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 0.1mAdc, VCE = 10Vdc  
20  
35  
40  
20  
IC = 10mAdc, VCE = 10Vdc  
IC = 150mAdc, VCE = 10Vdc  
IC = 500mAdc, VCE = 10Vdc  
hFE  
120  
Collector-Emitter Saturation Voltage  
IC = 150mAdc, IB = 15mAdc  
VCE(sat)  
1.5  
1.3  
Vdc  
Vdc  
Base-Emitter Saturation Voltage  
IC = 150mAdc, IB = 15mAdc  
VBE(sat)  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Magnitude of Small-Signal Forward Current Transfer Ratio  
IC = 50mAdc, VCE = 10Vdc, f = 20MHz  
|hfe|  
3.0  
Small-Signal Forward Current Transfer Ratio  
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz  
30  
35  
100  
150  
hfe  
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz  
Small-Signal Short Circuit Input Impedance  
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz  
4.0  
8.0  
1.0  
25  
hib  
hob  
ηΩ  
pF  
Small-Signal Short Circuit Output Admittance  
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz  
Output Capacitance  
VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz  
Cobo  
SWITCHING CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Turn-On Time & Turn-Off Time  
(See Figure 5 of MIL-PRF-19500/181)  
ton + toff  
30  
ηs  
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%  
T4-LDS-0200 Rev. 1 (110597)  
Page 2 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
PACKAGE DIMENSIONS  
Dimensions  
Millimeters  
Symbol  
Inches  
Notes  
Min  
.178  
.170  
.209  
Max  
Min  
Max  
4.95  
5.33  
5.84  
CD  
CH  
HD  
LC  
LD  
LL  
LU  
L1  
.195  
.210  
.230  
4.52  
4.32  
5.31  
.100 TP  
.016  
2.54 TP  
5
8, 9  
7, 9  
4, 8, 9  
9
.021  
.750  
.019  
.050  
0.41  
12.70  
0.41  
0.53  
19.05  
0.48  
.500  
.016  
1.27  
L2  
.250  
.028  
.036  
.100  
6.35  
0.71  
.91  
9
TL  
TW  
P
.048  
.046  
1.22  
1.17  
5
2.54  
3
6
Q
.030  
.010  
0.76  
.025  
R
α
45° TP  
45° TP  
NOTES:  
1. Dimensions are in inches.  
2. Millimeters are given for general information only.  
3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010  
inch (0.254 mm).  
4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating plane.  
Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.  
5. Measured from maximum diameter of the actual device.  
6. Details of outline in this zone optional.  
7. The collector shall be electrically connected to the case.  
8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.  
9. All three leads.  
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.  
FIGURE 1. Physical dimensions 2N718A (TO-18).  
T4-LDS-0200 Rev. 1 (110597)  
Page 3 of 4  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
Gort Road Business Park, Ennis, Co. Clare, Ireland  
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298  
Dimensions  
Symbol  
Notes  
Inches  
Millimeters  
Min  
.240  
Max  
.260  
Min  
Max  
6.60  
CH  
LC  
LD  
LL  
LU  
L1  
L2  
HD  
CD  
P
6.10  
.200 TP  
.021  
5.08 TP  
7
.016  
.016  
0.41  
0.53  
8, 9  
See notes 12 and 13  
.019  
.050  
0.41  
0.48  
1.27  
8, 9  
8, 9  
8, 9  
.250  
.335  
.305  
.100  
6.35  
8.51  
7.75  
2.54  
.370  
.335  
9.40  
8.51  
6
5
Q
.050  
.010  
.045  
.034  
1.27  
0.25  
1.14  
0.86  
r
TL  
TW  
α
.029  
.028  
0.74  
0.71  
4
7
45° TP  
45° TP  
NOTES:  
1. Dimensions are in inches.  
2. Metric equivalents are given for general information only.  
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).  
4. TL measured from maximum HD.  
5. Outline in this zone is not controlled.  
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.  
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18  
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may  
be measured by direct methods or by the gauging procedure.  
8. LU applies between L1 and L2. LU applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond  
LL minimum.  
9. All three leads.  
10. The collector shall be electrically and mechanically connected to the case.  
11. r (radius) applies to both inside corners of tab.  
12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum.  
13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)  
maximum.  
14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.  
FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39).  
T4-LDS-0200 Rev. 1 (110597)  
Page 4 of 4  

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