MIL-PRF-19500/253H
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspections only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-
points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein: delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
1037
Condition
B4
B5
VCB = 10 V dc.
1027
VCB = 10 V dc; PD ³ 100 percent of maximum rated PT (see 1.3). (NOTE: If a
failure occurs, resubmission shall be at the test conditions of the original
sample.)
Option 1: 96 hours min, sample size in accordance with table VIa of
MIL-PRF-19500, adjust PD or TA to achieve TJ = +275°C minimum.
Option 2: 216 hours min., sample size = 45, c = 0; adjust PD or TA to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method Condition
1039
1039
1032
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied
to achieve TJ = +150°C minimum using a minimum power dissipation, PD = 75 percent of
PT maximum rated as defined in 1.3 herein. No heat sink or forced-air cooling on the
devices shall be permitted. n = 45 devices, c = 0.
2
3
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
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