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产品型号JANTX2N930的概述

芯片JANTX2N930的概述 JANTX2N930是一种NPN晶体管,属于JANTX系列的军用级别器件,广泛应用于高可靠性和高性能的电子设备之中。此芯片主要用于信号放大和开关电路中,特别适合于高频、高速和高功率需求的场合。由于其卓越的温度稳定性和长期可靠性,JANTX2N930在航空航天、军事、以及其它关键应用中均具有重要的地位。 该芯片的设计理念体现在其高耐压、强承载能力和可重复性等参数上,使其在严苛环境中依然能够正常工作。JANTX2N930采用了高纯度的硅材料,其生产过程符合严格的军用标准。这些特性使得JANTX2N930成为一个广受欢迎的选择,特别是在需要可靠性和耐用性的场合。 芯片JANTX2N930的详细参数 JANTX2N930的主要电气特性如下: - 类型:NPN晶体管 - 最大集电极-发射极电压(Vce):60V - 最大集电极电流(Ic):1A - 增益带宽积(f...

产品型号JANTX2N930的Datasheet PDF文件预览

The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 25 June 2002.  
INCH-POUND  
MIL-PRF-19500/253H  
25 March 2002  
SUPERSEDING  
MIL-PRF-19500/253G  
23 April 2001  
PERFORMANCE SPECIFICATION  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER  
TYPES 2N930 AND 2N930UB JAN, JANTX, JANTXV, JANS, JANHC AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Four  
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product  
assurance are provided for die.  
1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB, surface mount), and figures 3 and 4 (die).  
* 1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
P
(1)  
V
V
V
I
T and T  
J STG  
T
CBO  
CEO  
EBO  
C
R
R
qJA  
qJC  
T
= +25°C  
A
mW  
360  
V dc  
60  
V dc  
45  
V dc  
6
mA dc  
30  
°C  
°C/W  
°C/W  
-65 to +200  
97  
485  
(1) Derate linearly at 2.06 mW/°C above T = +25°C.  
A
1.4 Primary electrical characteristics.  
h
(1)  
h
(1)  
C
|h  
|
V
(1)  
V
(1)  
FE1  
FE2  
obo  
fe  
BE(SAT)  
CE(SAT)  
Limits  
V
= 5 V dc  
V
C
= 5 V dc  
V
= 5 V dc  
V
C
= 5 V dc  
I
= 10 mA dc  
I = 0.5 mA dc  
B
I
= 10 mA dc  
= 0.5 mA dc  
CE  
CE  
CB  
I
CE  
= 500 µA dc  
C
C
B
I
= 10 µA dc  
I
= 500 µA dc  
= 0  
I
I
C
E
f = 30 MHz  
100 kHz £ f £ 1 MHz  
pF  
V dc  
V dc  
1.0  
Min  
Max  
100  
300  
150  
1.5  
6.0  
0.6  
1.0  
8.0  
(1) Pulsed (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in  
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post  
Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD  
Form 1426) appearing at the end of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
MIL-PRF-19500/253H  
2. APPLICABLE DOCUMENTS  
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This  
section does not include documents cited in other sections of this specification or recommended for additional  
information or as examples. While every effort has been made to ensure the completeness of this list, document  
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this  
specification, whether or not they are listed.  
2.2 Government documents.  
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a  
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are  
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and  
supplement thereto, cited in the solicitation (see 6.2).  
SPECIFICATION  
DEPARTMENT OF DEFENSE  
MIL-PRF-19500 - Semiconductor Devices, General Specification for.  
STANDARD  
DEPARTMENT OF DEFENSE  
MIL-STD-750 - Test Methods for Semiconductor Devices.  
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the  
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,  
Philadelphia, PA 19111-5094.)  
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited  
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws  
and regulations unless a specific exemption has been obtained.  
3. REQUIREMENTS  
3.1 General. The requirements for acquiring the product described herein shall consist of this document and  
MIL-PRF-19500.  
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a  
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)  
before contract award (see 4.2 and 6.3).  
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as  
specified in MIL-PRF-19500.  
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in  
MIL-PRF-19500, and on figure 1 (T0-18), figure 2 (UB, surface mount) and figures 3 and 4 (die).  
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.  
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).  
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500.  
2
MIL-PRF-19500/253H  
Dimensions  
Inches Millimeters  
Symbol  
Note  
Min  
Max  
.195  
.210  
.230  
Min  
4.52  
4.32  
5.31  
Max  
4.95  
5.33  
5.84  
CD  
CH  
HD  
LC  
LD  
LL  
LU  
L1  
L2  
P
.178  
.170  
.209  
.100 TP  
2.54 TP  
6
.016  
.500  
.016  
.021  
.750  
.019  
.050  
0.41  
0.53  
7,8  
7,8  
7,8  
7,8  
7,8  
12.70 19.05  
0.41  
0.48  
1.27  
.250  
.100  
6.35  
2.54  
Q
.030  
.048  
.046  
.010  
0.76  
1.22  
1.17  
0.25  
5
3,4  
3
10  
6
TL  
TW  
r
.028  
.036  
0.71  
0.91  
a
45° TP  
45° TP  
NOTES:  
1. Dimension are in inches.  
2. Metric equivalents are given for general information only.  
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm).  
4. Dimension TL measured from maximum HD.  
5. Body contour optional within zone defined by HD, CD, and Q.  
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be  
within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC)  
relative to tab at MMC. The device may be measured by direct methods.  
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.  
Diameter is uncontrolled in L1 and beyond LL minimum.  
8. All three leads.  
9. The collector shall be internally connected to the case.  
10. Dimension r (radius) applies to both inside corners of tab.  
11. In accordance with ANSI Y14.5M, diameters are equivalent to f x symbology.  
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.  
FIGURE 1. Physical dimensions (similar to TO-18).  
3
MIL-PRF-19500/253H  
Dimensions  
Millimeters  
Min  
Symbol  
Inches  
Max  
Note  
Min  
.046  
.017  
.016  
.016  
.016  
.085  
.071  
.035  
.085  
.115  
Max  
1.42  
0.89  
0.61  
0.61  
0.61  
2.74  
2.01  
0.99  
2.74  
3.25  
3.25  
0.96  
0.96  
A
.056  
.035  
.024  
.024  
.024  
.108  
.079  
.039  
.108  
.128  
.128  
.038  
.038  
0.97  
0.43  
0.41  
0.41  
0.41  
2.41  
1.81  
0.89  
2.41  
2.82  
A1  
B1  
B2  
B3  
D
D1  
D2  
D3  
E
E3  
L1  
L2  
.022  
.022  
0.56  
0.56  
NOTES:  
1. Dimensions are in inches.  
2. Metric equivalents are given for general information only.  
FIGURE 2. Physical dimensions, surface mount (UB version).  
4
MIL-PRF-19500/253H  
A- version  
NOTES:  
1. Chip size .............................................. 15 x 19 mils ±1 mil.  
2. Chip thickness...................................... 10 ±1.5 mil.  
3. Top metal ............................................. Aluminum 15,000Å minimum, 18,000Å nominal.  
4. Back metal ........................................... A. Gold 2,500Å minimum, 3,000Å nominal.  
B. Eutectic Mount – No Gold.  
5. Backside............................................... Collector.  
6. Bonding pad......................................... B = 3 mils, E = 4 mils diameter.  
7. Passivation........................................... Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom.  
FIGURE 3. Physical dimensions, JANHCA die.  
5
MIL-PRF-19500/253H  
B-version  
Die size:  
.018 x .018 inch (0.4572 x 0.4572 mm).  
Die thickness:  
Base pad:  
.008 ±.0016 inch (0.2032 ±0.04064 mm).  
.0025 inch (0.0635 mm) diameter.  
.003 inch (0.0762 mm) diameter.  
Gold, 6,500 ±1,950 Å.  
Aluminum, 19,500 ±2,500 Å.  
Collector.  
Emitter pad:  
Back metal:  
Top metal:  
Back side:  
Glassivation:  
SiO2, 7,500 ±1,500 Å.  
FIGURE 4. Physical dimensions, JANHCB and JANKCB die.  
6
MIL-PRF-19500/253H  
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance  
characteristics are as specified in 1.3, 1.4, and table I herein.  
3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.  
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and  
shall be free from other defects that will affect life, serviceability, or appearance.  
4. VERIFICATION  
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:  
a. Qualification inspection (see 4.2).  
b. Screening (see 4.3).  
c. Conformance inspection (see 4.4, and tables I, II, and III).  
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified  
herein.  
* 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification  
only. In case qualification was awarded to a prior revision of the associated specification that did not request the  
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this  
revision to maintain qualification.  
* 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of  
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I  
herein. Devices that exceed the limits of table I herein shall not be acceptable.  
Screen (see tableIV  
of MIL-PRF-19500)  
Measurement  
JANS levels  
Measurement  
JANTX and JANTXV levels  
3c  
Thermal impedance, method 3131 of  
MIL-STD-750.  
Thermal impedance, method 3131 of  
MIL-STD-750.  
9
ICBO2, hFE2  
Not applicable  
48 hours minimum  
ICBO2, hFE2  
10  
11  
48 hours minimum  
ICBO2, hFE2  
DICBO2 = 100 percent of initial value or  
5 nA dc, whichever is greater;  
DhFE2 = ± 25 percent.  
12  
13  
See 4.3.1, 240 hours minimum  
Subgroups 2 and 3 of table I herein;  
See 4.3.1, 80 hours minimum  
Subgroup 2 of table I herein;  
DICBO2 = 100 percent of initial value or DICBO2 = 100 percent of initial value or  
5 nA dc, whichever is greater;  
5 nA dc, whichever is greater;  
DhFE2 = ± 25 percent.  
DhFE2 = ± 25 percent.  
* 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; apply PT = 360 mW  
dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted.  
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with  
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows  
JANS requirements; the JANHC follows JANTX requirements.  
7
MIL-PRF-19500/253H  
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as  
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of  
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspections only (table VIb,  
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with  
4.4.2).  
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I  
herein.  
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions  
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-  
points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein: delta  
requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing.  
Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step  
in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein.  
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.  
Subgroup  
Method  
1037  
Condition  
B4  
B5  
VCB = 10 V dc.  
1027  
VCB = 10 V dc; PD ³ 100 percent of maximum rated PT (see 1.3). (NOTE: If a  
failure occurs, resubmission shall be at the test conditions of the original  
sample.)  
Option 1: 96 hours min, sample size in accordance with table VIa of  
MIL-PRF-19500, adjust PD or TA to achieve TJ = +275°C minimum.  
Option 2: 216 hours min., sample size = 45, c = 0; adjust PD or TA to achieve  
TJ = +225°C minimum.  
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the  
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot  
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed  
assembly lot shall be scrapped.  
Step  
1
Method Condition  
1039  
1039  
1032  
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied  
to achieve TJ = +150°C minimum using a minimum power dissipation, PD = 75 percent of  
PT maximum rated as defined in 1.3 herein. No heat sink or forced-air cooling on the  
devices shall be permitted. n = 45 devices, c = 0.  
2
3
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.  
Samples shall be selected from a wafer lot every twelve months of wafer production.  
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,  
c = 0.  
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.  
8
MIL-PRF-19500/253H  
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following  
requirements:  
a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or  
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection  
lot. See MIL-PRF-19500.  
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2  
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high  
temperature, the samples for life test (subgroups B4 and B5 for JANS and group B for JAN, JANTX, and  
JANTXV) may be pulled prior to the application of final lead finish.  
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions  
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and  
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in  
accordance with group A, subgroup 2 and table III herein; delta requirements only apply to subgroup C6.  
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.  
Subgroup  
C2  
Method  
2036  
Condition  
Test condition E (not applicable for UB devices).  
C6  
1026  
1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ =  
+150°C minimum using a minimum of PD = 75 percent of maximum rated  
PT as defined in 1.3.  
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.  
Subgroup  
Method  
2036  
Condition  
C2  
C5  
C6  
Test condition E (not applicable for UB devices).  
3131  
See 4.5.2.  
Not applicable.  
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any  
inspection lot containing the intended package type and lead finish procured to the same specification which is  
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any  
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of  
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be  
considered as complying with the requirements for that subgroup.  
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for  
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-  
points) shall be in accordance with table I, subgroup 2 herein.  
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.  
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of  
MIL-STD-750.  
9
MIL-PRF-19500/253H  
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method  
3131 of MIL-STD-750 (for qualification only). The following details shall apply:  
a. Collector current magnitude during power applications shall be 28 mA dc minimum.  
b. Collector to emitter voltage magnitude ³ 20 V dc.  
c. Reference temperature measuring point shall be the case.  
d. Reference point temperature shall be +25°C £ T £ +75°C and recorded before the test is started.  
R
e. Mounting arrangement shall be with heat sink to case.  
f. Maximum limit shall be R  
= 97°C/W.  
qJC  
10  
MIL-PRF-19500/253H  
TABLE I. Group A inspection.  
Inspection  
1/  
MIL-STD-750  
Conditions  
Limit  
Min Max  
Unit  
Symbol  
Method  
2071  
Subgroup 1 2/  
Visual and mechanical  
n = 45 devices, c = 0  
examination  
3/  
Solderability 3/ 4/  
2026  
1022  
n = 15 leads, c = 0  
Resistance to solvents  
3/ 4/ 5/  
n = 15 devices, c = 0  
Temperature cycling  
3/ 4/  
1051  
1071  
Test condition C, 25 cycles.  
n = 22 devices, c = 0  
Hermetic seal 4/  
Fine leak  
n = 22 devices, c = 0  
Gross leak  
Electrical  
Group A, subgroup 2  
measurements  
Bond strength 3/ 4/  
2037  
2075  
Precondition TA = +250°C at t =  
24 hrs or TA = 300°C at t = 2  
hrs n = 11 wires, c = 0  
Decap internal visual  
(design verification) 4/  
n = 4 device, c = 0  
Subgroup 2  
Collector to base cutoff  
current  
3036  
3061  
3011  
3041  
3041  
3061  
10  
10  
mA dc  
mA dc  
V dc  
Bias condition D, VCB = 60 V dc  
Bias condition D, VEB = 6 V dc  
ICBO1  
Emitter to base cutoff  
current  
IEBO1  
Breakdown voltage,  
collector to emitter  
45  
Bias condition D; IC = 10 mA  
dc; pulsed (see 4.5.1)  
V(BR)CEO  
Collector to emitter  
cutoff current  
2.0  
2.0  
5
nA dc  
nA dc  
nA dc  
Bias condition C; VCE = 45 V  
dc  
ICES1  
Collector to emitter  
cutoff current  
Bias condition C; VCE = 5 V dc  
ICEO  
Emitter to base cutoff  
current  
Bias condition D; VEB = 5 V dc  
IEBO2  
See footnotes at end of table.  
11  
MIL-PRF-19500/253H  
TABLE I. Group A inspection – Continued.  
MIL-STD-750  
Inspection  
1/  
Limit  
Unit  
Symbol  
Method  
Conditions  
Min  
Max  
Subgroup 2 - continued.  
Collector to base cutoff  
current  
3036  
3076  
3076  
3076  
3071  
3066  
Bias condition D;  
VCB = 45 V dc  
10  
nA dc  
ICBO2  
Forward-current transfer  
ratio  
100  
150  
300  
VCE = 5 V dc; IC = 10 mA dc  
Pulsed (see 4.5.1)  
hFE1  
Forward-current transfer  
ratio  
VCE = 5 V dc; IC = 500 mA dc  
Pulsed (see 4.5.1)  
hFE2  
Forward-current transfer  
ratio  
600  
1.0  
1.0  
VCE = 5 V dc; IC = 10 mA dc  
hFE3  
Collector-emitter saturation  
voltage  
V dc  
V dc  
IC = 10 mA dc; IB = 0.5 mA dc  
pulsed (see 4.5.1)  
VCE(sat)  
Base-emitter saturation  
voltage  
Test condition A; IC = 10 mA  
dc; IB = 0.5 mA dc; pulsed  
(see 4.5.1)  
0.6  
VBE(sat)  
Subgroup 3  
High temperature operation  
TA = +150°C  
Collector to base cutoff  
current  
3036  
3076  
10  
mA dc  
Bias condition C;VCE = 45 V  
dc pulsed (see 4.5.1)  
ICES2  
Low temperature operation  
TA = -55°C  
Forward-current transfer  
ratio  
20  
VCE = 5 V dc; IC = 10 mA dc  
hFE4  
Subgroup 4  
Small-signal short-circuit  
forward current transfer  
ratio  
3206  
3306  
3236  
150  
1.5  
600  
6.0  
8
VCE = 5 V dc; IC = 1 mA dc;  
f = 1 kHz  
hfe  
Magnitude of small-signal  
short- circuit forward  
current transfer ratio  
VCE = 5 V dc; IC = 500 mA dc;  
f = 30 MHz  
| hfe |  
Open circuit output  
capacitance  
pF  
VCB = 5 V dc; IE = 0;  
100 kHz £ f £ 1 MHz  
Cobo  
See footnotes at end of table.  
12  
MIL-PRF-19500/253H  
TABLE I. Group A inspection – Continued.  
MIL-STD-750  
Inspection  
1/  
Limit  
Max  
Unit  
Symbol  
Method  
Conditions  
Min  
Subgroup 4 - continued.  
Noise figure  
3246  
NF  
VCE = 5 V dc; IC = 10 mA dc;  
Rg = 10 kW  
Test 1  
Test 2  
Test 3  
5
3
3
dB  
dB  
dB  
f = 100Hz  
f = 1 kHz  
f = 10 kHz  
Small-signal open-circuit  
output admittance  
3216  
3211  
0
1.0  
mhos  
VCB = 5 V dc; IE = 1.0 mA dc;  
f = 1 kHz  
hoe  
4
Small-signal open-circuit  
reverse voltage transfer  
ratio  
VCB = 5 V dc; IE = 1.0 mA dc;  
f = 1 kHz  
hre  
6 x 10-  
Small-signal short-circuit  
input impedance  
3201  
hie  
25  
32  
W
VCB = 5 V dc; IE = 1.0 mA dc;  
f = 1 kHz  
Subgroups 5 and 6  
Not applicable  
1/ For sampling plan, unless otherwise specified, see MIL-PRF-19500.  
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure  
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon  
submission.  
3/ Separate samples may be used.  
4/ Not required for JANS devices.  
5/ Not required for laser marked devices.  
13  
MIL-PRF-19500/253H  
TABLE II. Group E inspection (all quality levels) – for qualification only.  
MIL-STD-750  
*
Inspection  
Qualification  
Method  
Conditions  
Subgroup 1  
45 devices  
c = 0  
Temperature cycling  
(air to air)  
1051  
1071  
Test condition C, 500 cycles  
Hermetic seal  
Fine leak  
Gross leak  
Electrical measurements  
Subgroup 2  
See group A, subgroup 2 and table III herein.  
45 devices  
c = 0  
Intermittent life  
1037  
VCB = 10 V dc, 6,000 cycles.  
Electrical measurements  
Subgroup 3  
See group A, subgroup 2 and table III herein.  
Not applicable  
Subgroups 4, 5, 6 and 7  
Not applicable  
Subgroup 8  
45 devices  
c = 0  
Reverse stability  
1033  
Condition A for devices ³ 400 V.  
Condition B for devices < 400 V.  
14  
MIL-PRF-19500/253H  
TABLE III. Groups B, C, and E delta measurements.  
*
Step  
Inspection  
MIL-STD-750  
Conditions  
Symbol  
Limit  
Unit  
Method  
3036  
1
2
Collector-base cutoff  
current  
100 percent of initial  
value or 5 nA dc,  
whichever is greater.  
DICB02  
1/  
Bias condition D, VCB  
45 V dc  
=
Forward current transfer  
ratio  
3076  
±25 percent change  
from initial reading.  
VCE = 5 V dc; IC = 500  
mA dc; pulsed see 4.5.1.  
DhFE2  
1/  
1/ Devices which exceed the group A limits for this test shall not be accepted.  
5. PACKAGING  
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or  
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to  
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements  
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,  
or within the Military Department's System Command. Packaging data retrieval is available from the managing  
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the  
responsible packaging activity.  
6. NOTES  
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)  
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.  
6.2 Acquisition requirements. Acquisition documents must specify the following:  
a. Title, number, and date of this specification.  
b. Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents  
referenced (see 2.2.1).  
c. The lead finish as specified (see 3.4.1).  
d. Type designation and quality assurance level.  
e. Packaging requirements (see 5.1).  
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which  
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not  
such products have actually been so listed by that date. The attention of the contractors is called to these  
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal  
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the  
products covered by this specification. Information pertaining to qualification of products may be obtained from  
Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.  
15  
MIL-PRF-19500/253H  
6.4 Suppliers of JANHC die. The qualified JANHC and JANKC suppliers with the applicable letter version  
(example JANHCA2N930) will be identified on the QML.  
JANC ordering information  
PIN  
Manufacturer  
43611  
34156  
2N930  
JANHCA2N930  
JANHCB2N930  
JANKCB2N930  
6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where  
changes from the previous issue were made. This was done as a convenience only and the Government assumes  
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the  
requirements of this document based on the entire content irrespective of the marginal notations and relationship to  
the last previous issue.  
Custodians:  
Army - CR  
Navy - EC  
Air Force - 11  
NASA - NA  
DLA - CC  
Preparing activities:  
DLA – CC  
(Project 5961-2506)  
Review activities:  
Army - AR, AV, MI, SM  
Navy - AS  
Air Force – 71, 99  
16  
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL  
INSTRUCTIONS  
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision  
letter should be given.  
2. The submitter of this form must complete blocks 4, 5, 6, and 7.  
3. The preparing activity must provide a reply within 30 days from receipt of the form.  
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on  
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the  
referenced document(s) or to amend contractual requirements.  
1. DOCUMENT NUMBER  
MIL-PRF-19500/253H  
2. DOCUMENT DATE  
25 March 2002  
I RECOMMEND A CHANGE:  
3. DOCUMENT TITLE  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N930 AND 2N930UB JAN, JANTX,  
JANTXV, JANS, JANHC AND JANKC  
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)  
5. REASON FOR RECOMMENDATION  
6. SUBMITTER  
a. NAME (Last, First, Middle initial)  
b. ORGANIZATION  
c. ADDRESS (Include Zip Code)  
d. TELEPHONE (Include Area Code)  
7. DATE SUBMITTED  
COMMERCIAL  
DSN  
FAX  
EMAIL  
8. PREPARING ACTIVITY  
b. TELEPHONE  
Commercial  
614-692-0510  
a. Point of Contact  
Alan Barone  
DSN  
FAX  
EMAIL  
850-0510  
614-692-6939  
alan.barone@dscc.dla.mil  
c. ADDRESS  
Defense Supply Center, Columbus  
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:  
Defense Standardization Program Office (DLSC-LM)  
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221  
Telephone (703) 767-6888 DSN 427-6888  
ATTN: DSCC-VAC, P.O. Box 3990  
Columbus, OH 43216-5000  
DD Form 1426, Feb 1999 (EG)  
Previous editions are obsolete  
WHS/DIOR, Feb 99  
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