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首天国际（深圳）科技有限公司
JANTXV2N7335
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QQ：1318502189 复制
0755-82807802/82807803

深圳市芯福林电子有限公司
JANTXV2N7335
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13418564337

柒号芯城电子商务（深圳）有限公司
JANTXV2N7335
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0755-83209937

北京元坤伟业科技有限公司
JANTXV2N7335
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010-62104931、62106431、62104891、62104791

深圳市中利达电子科技有限公司
JANTXV2N7335
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0755-83200645/13686833545

深圳市芯源通半导体有限公司
JANTXV2N7335

数量10880
厂家IR
封装DIP
批号21+
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13652438980

深圳市楷兴电子科技有限公司
JANTXV2N7335

数量99600
厂家IOR
封装DIP
批号21+
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0755-83016042

麦尔集团
JANTXV2N7335

数量450
厂家MSC
封装十五周年庆典
批号17+
原装现货，可随时上门看货
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88266576

深圳市一线半导体有限公司
JANTXV2N7335

数量28000
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深圳市科雨电子有限公司
JANTXV2N7335

数量9800
厂家2200
封装
批号21+
原厂渠道，全新原装现货，欢迎查询！
QQ：97877805 复制
171-4929-0036（微信同号）

产品型号JANTXV2N7335的Datasheet PDF文件预览

PD - 90397G

IRFG9110

JANTX2N7335

JANTXV2N7335

REF:MIL-PRF-19500/599

100V, QUAD P-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

POWER MOSFET

THRU-HOLE (MO-036AB)

Product Summary

Part Number RDS(on) ID

IRFG9110

1.4Ω -0.75A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state resis-

tance combined with high transconductance. HEXFET tran-

sistors also feature all of the well-established advantages

of MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

MO-036AB

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-0.75

-0.5

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

-3.0

@ T = 25°C

1.4

W/°C

Linear Derating Factor

0.011

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

-5.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

1.3 (typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

04/16/02

IRFG9110

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

Drain-to-Source Breakdown Voltage

-100

—

= 0V, I = -1.0mA

DSS

V/°C Reference to 25°C, I = -1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

-0.098

DSS

Voltage

Static Drain-to-Source On-State

Resistance

—

1.4

1.73

-4.0

—

= -10V, I = -0.5A➀

GS D

DS(on)

Ω

= -10V, I = -0.75A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

0.67

—

= V , I = -250µA

GS(th)

Ω

S ( )

> -15V, I

= -0.5A➀

-25

V = -80V, V = 0V

DS GS

DSS

µA

—

-250

= -80V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

—

-100

100

7.0

8.0

= -20V

GSS

=20V

= -10V, ID -0.75A

= -50V

= -50V, I = -0.75A

= -10V, R =7.5Ω

d(on)

Turn-Off Delay Time

FallTime

Total Inductance

d(off)

—

nH Measured from drain lead (6mm/

0.25in. from package) to source lead

(6mm/0.25in. from package)

S +

Input Capacitance

—

200

= 0V, V

= -25V

iss

f = 1.0MHz

Output Capacitance

—

oss

rss

Reverse Transfer Capacitance

Source-DrainDiodeRatingsandCharacteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

-0.75

-3.0

-5.5

200

9.0

T = 25°C, I = -0.75A, V

= 0V ➀

Reverse Recovery Time

µc

T = 25°C, I = -0.75A, di/dt ≤-100A/µs

Reverse Recovery Charge

≤ -50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

thJC

thJA

°C/W

Junction to Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFG9110

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

www.irf.com

IRFG9110

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFG9110

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

90%

Fig 9. Maximum Drain Current Vs.

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

IRFG9110

D.U.T

DRIVER

-10V

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-10V

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFG9110

Foot Notes:

➀➀ I

≤ -0.75A, di/dt ≤ −75A/µs,

≤ -100V, T ≤ 150°C

➀➀Repetitive Rating; Pulse width limited by

maximum junction temperature.

➀➀➀V

=-25V, starting T = 25°C, L = 266mH

Peak I = -0.75A, V

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= -10V

Case Outline and Dimensions — MO-036AB

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 04/02

www.irf.com

JANTXV2N7335相关文章

配单直通车

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

柒号芯城电子商务（深圳）有限公司服务专线: 0755-83209937 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

JANTXV2N7335产品参数

型号:	JANTXV2N7335
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	MICROSEMI CORP
零件包装代码：	DIP
包装说明：	IN-LINE, R-CDIP-T14
针数：	14
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.75
风险等级：	5.19
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
雪崩能效等级（Eas）：	75 mJ
配置：	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	0.75 A
最大漏源导通电阻：	1.73 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	MO-036AB
JESD-30 代码：	R-CDIP-T14
元件数量：	4
端子数量：	14
工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	3 A
认证状态：	Qualified
参考标准：	MIL-19500/599
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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