JM38510现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号JM38510的概述

芯片JM38510的概述 JM38510是一款多功能、灵活可编程的集成电路，广泛应用于各种电子设备和自动化系统中。该芯片通常被用于高端电子产品，如航空航天、国防以及工业自动化等领域，因其在工作温度范围、抗辐射能力及可靠性方面表现优异。JM38510的设计旨在满足军事级别的标准，确保在苛刻环境中仍能稳定工作。芯片JM38510的详细参数 JM38510的参数规格主要包含以下几个方面： 1. 工作电压：一般为4.5V - 5.5V，保证芯片在低功耗的同时，维持良好的工作性能。 2. 工作温度范围：该芯片能够在-55℃至125℃的恶劣环境下正常工作，以适应不同的使用场景。 3. 封装类型：常见的封装类型有DIP、SOIC和TQFP，这使得其在各种应用中的安装和连接更为便利。 4. 引脚数：常见的引脚数有16、20和32引脚可供选择，支持不同复杂程度的电路设计。 5. 工作频率：工作...

产品型号JM38510的Datasheet PDF文件预览

DG200A_MIL

Vishay Siliconix

Monolithic Dual SPST CMOS Analog Switch

FEATURES

BENEFITS

APPLICATIONS

D "15 V Input Signal Range

D 44-V Maximum Supply Ranges

D On-Resistance: 45 W

D Wide Dynamic Range

D Simple Interfacing

D Servo Control Switching

D Programmable Gain Amplifiers

D Audio Switching

D Reduced External Component

Count

D TTL and CMOS Compatibility

D Programmable Filters

DESCRIPTION

The DG200A_MIL is a dual, single-pole, single-throw analog

switch designed to provide general purpose switching of

analog signals. This device is ideally suited for designs

requiring a wide analog voltage range coupled with low

on-resistance.

Each switch conducts equally well in both directions when on,

and blocks up to 30 V peak-to-peak when off. In the on

condition, this bi-directional switch introduces no offset

voltage of its own.

The DG200A_MIL is designed on Vishay Siliconix’ improved

PLUS-40 CMOS process. An epitaxial layer prevents latchup.

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

Dual-In-Line

Metal Can

V+ (Substrate and Case)

GND

V+ Substrate

GND

V–

Top View

TRUTH TABLE

Logic

Switch

OFF

Logic “0” v 0.8 V

Logic “1” w 2.4 V

Document Number: 70035

S-02314—Rev. E, 05-Oct-00

www.vishay.com

4-1

DG200A_MIL

Vishay Siliconix

ORDERING INFORMATION

Temp Range

Package

Part Number

DG200AAK

14-Pin CerDIP

DG200AAK/883, JM38510/12301BCA,

5962-9562901QCA

–55 to 125_C

DG200AAA

10-Pin Metal Can

14-Pin Sidebraze

DG200AAA/883, JM38510/12301BIC

JM38510/12301BCC

ABSOLUTE MAXIMUM RATINGS

V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V

Power Dissipation (Package)

10-Pin Metal Can . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW

14-Pin CerDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW

GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V

Digital Inputs , V , V . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or

30 mA, whichever occurs first

Notes:

Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA

a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal

diodes. Limit forward diode current to maximum current ratings.

b. All leads welded or soldered to PC Board.

c. Derate 6 mW/_C above 75_C

Current S or D

(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C

d. Derate 11 mW/_C above 75_C

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+

V–

–

V+

GND

V–

FIGURE 1.

Document Number: 70035

S-02314—Rev. E, 05-Oct-00

www.vishay.com

4-2

DG200A_MIL

Vishay Siliconix

SPECIFICATIONS

Limits

Test Conditions

–55 to 125_C

Unless Otherwise Specified

V+ = 15 V, V– = –15 V

Parameter

Symbol

Temp^b

Min^c

Typ^d

Max^c

Unit

= 2.4 V, 0.8 V

Analog Switch

Analog Signal Range

Full

–15

ANALOG

Drain-Source

On-Resistance

Room

Full

100

= "10 V, I = –1 mA

DS(on)

Source Off

Leakage Current

Room

Full

–2

–100

100

= "14 V, V = #14 V

"0.01

"0.1

S(off)

Drain Off

Leakage Current

Room

Full

–2

–100

100

= "14 V, V = #14 V

D(off)

Channel On

Leakage Current

Room

Full

–2

–200

200

V = V = "14 V

S D

D(on)

Digital Control

Room

Full

–0.5

–1

0.0009

0.005

= 2.4 V

= 15 V

Input Current with

Input Voltage High

INH

Room

Full

0.5

Input Current with

Input Voltage Low

Room

Full

–0.5

–1

–0.0015

= 0 V

INL

Dynamic Characteristics

Turn-On Time

Turn-Off Time

Room

440

340

1000

425

See Switching Time Test Circuit

= 1000 pF, V = 0 V

OFF

Charge Injection

Room

–10

= 0 W

Source-Off Capacitance

Drain-Off Capacitance

= 0 V

Room

S(off)

f = 140 kHz

= 5 V

D(off)

D(on)

Channel-On Capacitance

Off Isolation

= V = 0 V, V = 0 V

Room

S(On)

OIRR

= 5 V, R = 75 W

= 2 V, f = 1 MHz

Crosstalk

(Channel-to-Channel)

TALK

Power Supplies

Positive Supply Current

Negative Supply Current

I+

Room

0.8

Both Channels On or Off

= 0 V and 2.4 V

I–

–1

–0.23

Notes:

a. Refer to PROCESS OPTION FLOWCHART.

b. Room = 25_C, Full = as determined by the operating temperature suffix.

c. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet.

d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

e. Guaranteed by design, not subject to production test.

= input voltage to perform proper function.

Document Number: 70035

S-02314—Rev. E, 05-Oct-00

www.vishay.com

4-3

DG200A_MIL

Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

vs. V and Power Supply Voltage

Leakage Currents vs. Analog Voltage

DS(on)

A: "5 V

B: "10 V

C: "12 V

D: "15 V

E: "20 V

= 25_C

120

100

or I

S(off)

D(off)

–6

D(on)

–12

–18

–24

–15 –12 –9 –6 –3

12 15

–15 –12 –9 –6 –3

12 15

– Drain Voltage (V)

ANALOG

– Analog Voltage (V)

Input Switching Threshold vs. V+ and V– Supply Voltages

Supply Currents vs. Toggle Frequency

2.5

V+ = 15 V

V– = –15 V

Both logic inputs

toggled simutaneously

2.0

1.5

1.0

0.5

I+

I–

"10

"15

"20

1 k

10 k

100 k

1 M

V+, V– Positive and Negative Supplies (V)

Toggle Frequency (Hz)

Document Number: 70035

S-02314—Rev. E, 05-Oct-00

www.vishay.com

4-4

DG200A_MIL

Vishay Siliconix

TEST CIRCUITS

is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.

+15 V

3 V

0 V

V+

Logic

Input

t <20 ns

50%

= +5 V

3 V

OFF

Switch

Input

35 pF

1 kW

V–

GND

90%

Switch

Output

–15 V

= V

+ r

DS(on)

FIGURE 2. Switching Time

+15 V

V+

OFF

1000 pF

3 V

V–

GND

DV = measured voltage error due to charge injection

The charge injection in coulombs is DQ = C x DV

–15 V

FIGURE 3. Charge Injection

+15 V

V+

= 50 W

50 W

= 50 W

5 V

GND

V–

GND

V–

–15 V

Off Isolation = 20 log

= 20 log

TALK

C = RF bypass

FIGURE 4. Off Isolation

FIGURE 5. Channel-to-Channel Crosstalk

Document Number: 70035

S-02314—Rev. E, 05-Oct-00

www.vishay.com

4-5

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