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产品型号JMB362-QGEZ0C的概述

芯片JMB362-QGEZ0C的概述芯片JMB362-QGEZ0C是一款由JMicron Technology Corporation（吉林科技股份有限公司）设计和制造的高性能SATA控制器。该芯片主要用于硬盘驱动器（HDD）、固态硬盘（SSD）以及其他存储设备中，作为数据传输的接口。JMB362-QGEZ0C通过其卓越的性能和高效的功耗管理，满足了现代计算设备对快速数据传输的需求。芯片JMB362-QGEZ0C的详细参数 JMB362-QGEZ0C能够支持SATA II（3.0 Gbps）数据传输速率，并具备多种存储模式的兼容性。该芯片的工作电压范围为3.3V至5V，适用于各种电源设计。在数据处理中，它采用了数据缓冲机制，有效降低了数据传输延迟。其PCI Express接口上的支持也使得与主板之间的连接更加灵活。具体参数如下： - 型号：JMB362-QGEZ0C - 制造商：...

产品型号JMC090-16的Datasheet PDF文件预览

JIEJIE MICROELECTRONICS CO.,Ltd

JMC090-16/18/20

Description:

1) Chip: double mesa SCRs of reverse blocking high-voltage

2) Chip area: 10.8mm×10.8mm (central gate thyristor)

3) Technology: mesa glass passivation technology, multilayer metallization

technology and non-void welding by vacuum welding technology

Typical Application:

Reactive power compensation, solid state relay, power module, etc.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Test Conditions

Symbol

T_j

Values

-40-125

Unit

℃

V

Operating junction temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Average on-state current

T_j=25℃

V_DRM

V_RRM

I_T(AV)

I_TSM

1200/1600/1800

90

T_j=25℃

T_C=80℃

tp=10ms

V

A

Peak on-state surge current

I²t value for fusing

2000

A

I²t

20000

A²s

V_D=2/3V_DRMtp=200μs

I_G=0.3A T_j=125℃

dI_G/dt=0.3A/μs

Critical rate of rise of on-state current

dI/dt

150

A/μs

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_C=25℃)

Parameter

Peak on-state voltage

Test Conditions

Symbol

Values

Unit

I_T=280A tp=380μs

V_TM

≤1.8

V

V_D=V_DRM

T_C=25℃

T_C=125℃

V_R=V_RRM

T_C=25℃

T_C=125℃

Repetitive peak off-state current

Repetitive peak reverse current

I_DRM1

I_DRM2

≤100

≤20

μA

mA

I_RRM1

I_RRM2

I_GT

≤100

≤20

μA

mA

Triggering gate current

Latching current

V_D=12V R_L=30Ω

20-120

≤300

≤250

≤2

mA

V

I_G=1.2 I_GT

I_L

Holding current

I_T=1A

I_H

V_D=12V R_L=30Ω

Triggering gate voltage

V_GT

TEL：+86-513-83639777

- 1 / 3-

http://www.jjwdz.com

JIEJIE MICROELECTRONICS CO.,Ltd

V_D=V_DRMT_j=125℃

Non triggering gate voltage

Critical rate of rise of voltage

V_GD

≥0.25

V

V_D=2/3V_DRMT_j=125℃

dV/dt

≥1000

V/μs

Gate Open

Mechanical Characteristics

Module size

12 mm×12 mm

1.6 mm

Module thickness

9 mm×9 mm

φ1.5mm

Welding area of cathode electrode

Welding area of control electrode

A

K

G

symbol

Working Conditions

1) No severe mechanical shock as impact and drop off in the process of transportation, storage and

working of product.

2) Storage conditions

Temperature: 5~40℃

Relative humidity: ≤45%

Storage time: 3 days for the open package; 3 months for the closed package

3) Welding conditions

Recommended solder component: Sn63Sb37 (or lead-free solder of liquid quadrant less than 240℃)

Recommended soldering conditions: shown in Table 1

4) Welding in the gate spot is recommended to be completed one-time by using fixture. If it is necessary

to use a soldering iron, the temperature of soldering iron is controlled within 280℃ and time is controlled

within 20s.

TEL：+86-513-83639777

- 2 / 3-

http://www.jjwdz.com

JIEJIE MICROELECTRONICS CO.,Ltd

Table 1

Sn63Sb37 Soldering conditions

Average heating rate

3℃/s (Max)

Low limit of temperature

TS(Min)

100℃

Preheating activation Upper limit of temperature TS(Max) 150℃

Time (min ~ max)

tS

60 ~ 90s

Melting point temperature

Peak temperature

TL

183℃ (Sn63Sb37)

240℃ (+0/-5℃)

TP

tp

Reflow zone

Reflow time

10～30s

(Peak temperature ±5℃)

Melting time

TL

40～60s

3.5℃/s

Maximum cooling rate

Recommended process time

300 ~ 360s

Sn63Pb37

T

p

250℃

200℃

150℃

100℃

t

P

T

L

(10-30S)

t

L

Ts(max)

(40-60S)

Ts(min)

ts

60-90S

Ordering Information

J M C 090 -16

16:VDRM/VRRM≥1600V

JieJie Microelectronics Co.,Ltd

18:VDRM/VRRM≥1800V

20:VDRM/VRRM≥2000V

Module of series

C:Central gate

IT(AV)=90A

TEL：+86-513-83639777

- 3 / 3-

http://www.jjwdz.com

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