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产品型号K1400E70的概述

芯片K1400E70的概述 K1400E70是一种广泛应用于多种电子设备的集成电路芯片，主要用于数据处理、信号处理及控制系统中。此芯片的设计旨在满足现代电子设备对性能和能效的高要求，因而凭借其优越的特性，在消费电子、工业控制和汽车电子等领域得到了广泛应用。此款芯片旨在解决多种复杂任务，包括运算、数据储存以及控制信号的生成等。K1400E70不仅能够支持高速度的数据传输，还有着极低的功耗特性，使得其在电池供电的设备中也能高效运行。随着科技的进步及对智能化、自动化的需求增加，K1400E70芯片的重要性愈加凸显。芯片K1400E70的详细参数 K1400E70芯片拥有以下主要参数： - 工作电压: 2.7V至5.5V，适合多种电源设备。 - 工作温度范围: -40℃至85℃，适应极端环境。 - 数据处理能力: 内置高效的运算单元，支持高速数据传输，速率可达到数百MHz。 - 存储容量:...

产品型号K1400E70的Datasheet PDF文件预览

DO-15X

Axial Lead

DO-214AA

Surface Mount

TO-202AB

Type 1

TO-92

Type 70

Do not use mounting tab

or center lead,

electrically connected

SIDAC

(95 - 330 Volts)

General Description

The Sidac is a silicon bilateral voltage triggered switch with

greater power-handling capabilities than standard diacs. Upon

application of a voltage exceeding the Sidac breakover voltage

point, the Sidac switches on through a negative resistance region

to a low on-state voltage. Conduction will continue until the cur-

rent is interrupted or drops below the minimum holding current of

the device.

Applications

•

High voltage lamp ignitors

Natural gas ignitors

Gas oil ignitors

High voltage power supplies

Xenon ignitors

Over voltage protector

Pulse generators

Fluorescent lighting ignitors

HID lighting ignitors

Teccor offers the complete voltage range (95-330) over three dif-

ferent packages:

•

TO-92 (95-280 volts)

Axial lead DO-15X (95-280 volts)

Surface Mount DO-214AA (95-280 volts)

TO-202AB (190-330 volts)

Teccor’s Sidacs feature glass passivated junctions to ensure a

rugged and dependable device capable of withstanding harsh

environments.

Features

•

AC circuit oriented

Variations of devices covered in this data sheet are available for

custom design applications. Please consult the factory for more

information.

Glass-passivated junctions

High surge current capability

Teccor Electronics

(972) 580-7777

9-1

SIDAC

Electrical Specifications

Part No.

T(RMS)

DRM

On-State

RMSCurrent

T_J≤125°C

50/60Hz

Sine Wave

(7) (8)

Repetitive

Peak

Off-State

Voltage

Breakover Voltage

50/60Hz Sine Wave

(1)

Repetitive Breakover

Peak

Current

Off-State

50/60Hz

Current Sine Wave

50/60Hz

Sine Wave

Type

V=V_DRM

DO-15X

G Package

TO-92

E Package

TO-202AB

F Package

DO-214AA

S Package

Amps

MAX

1.0

Volts

MIN

±90

Volts

µAmps

MAX

See “Package Dimensions” section for variations.

MIN

MAX

113

118

125

138

146

170

215

230

250

280

330

MAX

K1050E70

K1050G

K1100G

K1200G

K1300G

K1400G

K1500G

K2000G

K2200G

K2400G

K1050S

K1100E70

K1200E70

K1300E70

K1400E70

K1500E70

K2000E70

K2200E70

K2400E70

K1100S

K1200S

K1300S

K1400S

K1500S

K2000S

K2200S

K2400S

1.0

±90

104

110

120

130

140

190

205

220

240

270

1.0

±90

1.0

±90

1.0

±90

1.0

±90

K2000F1

K2200F1

K2400F1

K2401F1

K2500F1

K3000F1

1.0

±180

±190

1.0

1.0 (10)

1.0

K2500E70

K2500G

K2500S

1.0

General Notes

Electrical Specification Notes

•

All measurements are made at 60Hz with a resistive load at an

ambient temperature of +25°C unless otherwise specified.

(1) See Figure 9.6 for V_BOchange vs junction temperature.

(2) See Figure 9.7 for I_BOvs junction temperature.

(3) See Figure 9.2 for I_Hvs case temperature.

(4) See Figure 9.14 for test circuit.

(5) See Figure 9.1 for more than one full cycle rating.

(6) R_θ_JAfor TO-202 Type 23 and Type 41 is 70°C/watt.

•

Storage temperature range (T_S) is -65°C to +150°C.

The case (T_C) or lead (T_L) temperature is measured as shown on

the dimensional outline drawings. See “Package Dimensions” sec-

tion of this catalog.

(7) T_C90°C for TO-92 Sidac and T

105°C for TO-202 Sidacs.

≤

•

Junction temperature range (T_J) is -40°C to +125°C.

T_L100°C for DO-15X and T

90°C for DO-214AA.

≤

Lead solder temperature is a maximum of +230°C for 10 seconds

(8) See Figure 9.15 for clarification of Sidac operation.

(9) For best Sidac operation, the load impedance should be near or

less than switching resistance.

maximum; 1/16" (1.59mm) from case.

≥

(10) Teccor's new, improved series of sidacs is designed to ensure

goodcommutationathigherswitchingfrequenciesasrequiredinignitor

circuits for high intensity discharge (HID) lighting. A typical circuit

for a metal halide lamp ignitor is shown in the schematic, Figure

9.3. With proper component selection this circuit will produce three

pulses for ignition of Osram lamp types such as HQI-T70W, HQI-

T150W, and HQI-T250W which require a minimum of three pulses

at 4kV magnitude and >1 s duration each at a minimum repetition

rate of 3.3kHz.

SIDAC

9-2

Teccor Electronics

(972) 580-7777

SIDAC

dV /dt

dv/dt

di/dt

TSM

Peak

Peak One

Cycle Surge

Current

Dynamic

Holding Current

50/60Hz

Sine Wave

R = 100Ω

(3) (4)

Switching

Resistance

Critical

On-State

Voltage

= 1 Amp

Rate-of-Rise Rate-of-Rise Rate-of-Rise

of Turn-off

Voltage at

8kHz

of Off-State

Voltage at

of On-State

Current

50/60Hz Sine Wave

(Non-Repetitive)

(5)

– V )

)

= -------------------------------

Rated V

(I – I

DRM

≤ 100°C

50/60Hz Sine Wave

(9)

Volts

Max

Amps

mAmps

Package

60Hz

50Hz

kΩ

MIN

0.1

2.0

0.1

Volts/µSec

MIN

Amps/µSec

TYP

150

TYP

MAX

150

MIN

1.5

16.7

1500

150

3.0

150

1.5

150

100

SUPPLY FREQUENCY: 60 Hz Sinusoidal

LOAD: Resistive

RMS ON-STATE CURRENT: I RMS Maximum Rated

Value at Specified Junction Temperature

8.0

6.0

BLOCKING CAPABILITY MAY BE LOST

DURING AND IMMEDIATELY

FOLLOWING SURGE CURRENT

INTERVAL

4.0

OVERLOAD MAY NOT BE REPEATED

UNTIL JUNCTION TEMPERATURE

HAS RETURNED TO STEADY-STATE

RATED VALUE.

2.0

1.0

100

1000

Surge Current Duration - Full Cycles

Figure 9.1

Peak Surge Current vs Surge Current Duration

V-I Characteristics

THERMAL RESISTANCE (STEADY STATE)

[R ] °C/W (TYPICAL)

θJC

θJA

F (6)

35 [95]

18 [75]

7 [45]

30 [85]

Teccor Electronics

(972) 580-7777

9-3

SIDAC

Electrical Specifications

140

120

100

CURRENT WAVEFORM: Sinusoidal - 60 Hz

LOAD: Resistive or Inductive

FREE AIR RATING

2.0

1.5

1.0

-40

-15

+25

+65

+105

+125

Case Temperature (T ) -

0.2

0.4

0.6

0.8

1.0

RMS On-State Current [I

] - Amps

T(RMS)

Figure 9.2

Normalized DC Holding Current vs Case/Lead Temperature

Figure 9.5

Maximum Allowable Ambient Temperature vs On-State

Current

H.V.

STEP-UP

TRANSFORMER

BALLAST

-2

K2401F1

0.1 - 0.15 µF

-4

220V/240V

50/60Hz

METAL

HALIDE

LAMP

5 - 6µH

-6

-8

5.6K - 8.2K

-10

-12

0.22 - 0.33 µF

+25

+20

-40

-20

+40

+60

+80 +100 +120 +140

Typical Metal Halide Ignitor Circuit

Junction Temperature (T ) - ˚C

Figure 9.3

Typical Metal Halide Ignitor Circuit

Figure 9.6

Normalized V

Change vs Junction Temperature

di/dt Limit Line

600

400

TRM

Firing

200

Current

Waveform

l/f

100

f=10 Hz

V=V

T =125ºC Max

130

70 80

90 100 110 120

f=20 kHz

Junction Temperature (T ) -

0.8

0.6

6 8

1 x 10-2

6 8

1 x 10-1

4 6 8 1

2 x 10-3

Pulse base width (t ) - mSec.

Figure 9.4

SIDAC

Repetitive Peak On-State Current (I

Various Frequencies

) vs Pulse Width at

Figure 9.7

Normalized Repetitive Peak Breakover Current vs Junction

Temperature

TRM

9-4

Teccor Electronics

(972) 580-7777

SIDAC

=25˚C

4.7 µF

TO-92, DO-214AA & DO-15X

"E", "S" and "G" Packages

100V

4.7 kΩ

10 µF

50V

K1200E

SIDAC

½ W

4.7 µF

100V

200V

1.2 µF

24 VAC

60 Hz

TO-202 "F" Package

H.V.

IGNITOR

0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6

Positive or Negative Instantaneous On-State Voltage (v ) - Volts

Figure 9.8

On-State Current vs On-State Voltage (Typical)

Figure 9.11 Ignitor Circuit (Low Voltage Input)

CURRENT WAVEFORM: Sinusoidal

2.2

LOAD: Resistive or Inductive

CONDUCTION ANGLE: See Figure 9.15

BALLAST

2.0

1.8

TO-202 "F" Package

1.6

1.4

1.2

0.47µF

400V

SIDAC

0.22µF

LAMP

3.3 KΩ

7.5 KΩ

LAMP

1.0

0.8

0.6

0.4

0.2

120 VAC

60 Hz

220 VAC

60 Hz

16 mH

"E", "S" & "G" Packages

TO-92, DO-214AA & DO-15X

120 VAC

220 VAC

0.2

0.6

RMS On-State Current [I

0.8

1.0

0.4

] - Amps

T(RMS)

Figure 9.9

Power Dissipation (Typical) vs On-State Current

Figure 9.12 Typical High Pressure Sodium Lamp Firing Circuit

XENON LAMP

100Ω

10 µF

SCR

SIDAC

250V

20 MΩ

K2200F1

4KV

100-250

VAC

60 Hz

100-250

VAC

60 Hz

10 µF

450V

SIDAC

120VAC

60Hz

.01µF

400V

200-

400V

TRIGGER

TRANSFORMER

20:1

Figure 9.10 Comparison of Sidac vs SCR

Figure 9.13 Xenon Lamp Flashing Circuit

Teccor Electronics

(972) 580-7777

9-5

SIDAC

Electrical Specifications

PUSH

TEST

SWITCH TO TEST IN

EACH DIRECTION

100-250

VAC

60 Hz

100-250

VAC

60 Hz

DEVICE

UNDER

TEST

TRACE STOPS

100 Ω

LOAD

120-145

CONDUCTION

ANGLE

SCOPE

SCOPE INDICATIONS

LOAD CURRENT

Figure 9.14 Dynamic Holding Current Test Circuit for Sidacs

Figure 9.15 Basic Sidac Circuit

(a) Circuit

(b) Waveforms

SIDAC

≥ V

DC(IN)

- V

≤

max

≥

min

H (MIN)

Figure 9.16 Relaxation oscillator Using a Sidac

INPUT

VOLTAGE

≈ 3 ms

MONITOR

(See Note A)

0 V

5 V

(See Note B)

100 mH

COLLECTOR

CURRENT

0.63 A

100 mS

2N6127

(or equivalent)

BB1 =

150Ω

TIP-47

INPUT

50Ω

SIDAC V

BB2 =

MONITOR

50Ω

= 20 V

100Ω

COLLECTOR

VOLTAGE

BB2

= 0.1 Ω

10 V

=10 V

BB1

CE(sat)

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTE A: Input pulse width is increased until I

= 0.63A.

NOTE B: Sidac (or Diac or series of Diacs) chosen so that V

The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the

transistor could be destroyed.

is just below V

rating of transistor to be protected.

CEO

Figure 9.17 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements

SIDAC

9-6

Teccor Electronics

(972) 580-7777

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K1400E70产品参数

型号:	K1400E70
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	TECCOR ELECTRONICS INC
零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T2
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.30.00.80
风险等级：	5.12
Is Samacsys：	N
最大转折电压：	146 V
最小转折电压：	130 V
配置：	SINGLE
标称维持电流：	60 mA
JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T2
JESD-609代码：	e0
通态非重复峰值电流：	20 A
元件数量：	1
端子数量：	2
最高工作温度：	110 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND
封装形式：	CYLINDRICAL
认证状态：	Not Qualified
最大均方根通态电流：	1 A
重复峰值反向电压：	90 V
子类别：	Silicon Surge Protectors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	BOTTOM
触发设备类型：	SIDAC
Base Number Matches：	1

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