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K3020P/ K3020PG Series

Vishay Semiconductors

Optocoupler, Phototriac Output, 400 V V

DRM

Features

• Isolation materials according to UL 94-VO

• Pollution degree 2 (DIN/VDE 0110 resp. IEC

60664)

~

6

~

4

5

17221

• Climatic classification 55/100/21

(IEC 60068 part 1)

• Special construction: Therefore, extra low cou-

pling capacity of typical 0.2 pF, high Common

Mode Rejection

1

3

2

A (+) C (–) nc

Note: Pin 5 must not be connected

• I offered into 4 groups

FT

• Rated impulse voltage (transient overvoltage)

Pb

e3

V

= 6 kV peak

Pb-free

IOTM

• Isolation test voltage (partial discharge test volt-

Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso-

lation):

age) V = 1.6 kV

pd

• Rated isolation voltage (RMS includes DC)

V

= 600 V

(848 V peak)

• For appl. class I - IV at mains voltage ≤ 300 V

IOWM

RMS

• Rated recurring peak voltage (repetitive)

= 600 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-

5-5 pending, table 2, suitable for.

V

IORM

RMS

• Thickness through insulation ≥ 0.75 mm

• Creepage current resistance according to

VDE 0303/IEC 60112 Comparative Tracking

Index: CTI = 275

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Order Information

Part

Remarks

K3020P

I_FT< 30 mA, V_DRM= 400 V, DIP-6 300 mil

K3021P

I

_FT< 15 mA, V_DRM= 400 V, DIP-6 300 mil

K3022P

I_FT< 10 mA, V_DRM= 400 V, DIP-6 300 mil

K3023P

I

_FT< 5 mA, V_DRM= 400 V, DIP-6 300 mil

_FT< 3.6 mA, V_DRM= 400 V, DIP-6 300 mil

Agency Approvals

• UL1577, File No. E76222 System Code C, Double

Protection

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN

60950 (BS 7002), Certificate number 7081 and

7402

K3036P

K3020PG

K3021PG

K3022PG

K3023PG

K3036PG

I_FT< 30 mA, V_DRM= 400 V, DIP-6 400 mil

I

_FT< 15 mA, V_DRM= 400 V, DIP-6 400 mil

_FT< 10 mA, V_DRM= 400 V, DIP-6 400 mil

_FT< 5 mA, V_DRM= 400 V, DIP-6 400 mil

_FT< 3.6 mA, V_DRM= 400 V, DIP-6 400 mil

• DIN EN 60747-5-2 (VDE0884)

DIN EN 60747-5-5 pending

• FIMKO (SETI): EN 60950, Certificate No. 12398

G = Leadform 10.16 mm; G is not marked on the body

Applications

Monitors

Air conditioners

Line Switches

Solid state relay

Microwave

Description

The K3020P/ K3020PG series consists of a pho-

totransistor optically coupled to a gallium arsenide

infrared-emitting diode in a 6-lead plastic dual inline

package.

Document Number 83505

Rev. 1.9, 26-Oct-04

www.vishay.com

1

K3020P/ K3020PG Series

Vishay Semiconductors

VDE 0804

VDE Standards

Telecommunication apparatus and data processing

These couplers perform safety functions according to the following

equipment standards:

IEC 60065

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5

pending

Safety for mains-operated electronic and related household appa-

ratus.

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter

Test condition

Symbol

V_R

Value

5

Unit

V

Reverse voltage

Forward current

I_F

I_FSM

P_diss

T_j

80

3

mA

A

Forward surge current

Power dissipation

Junction temperature

t_p≤ 10 µs

100

mW

°C

Output

Parameter

Test condition

Symbol

V_DRM

Value

400

Unit

V

Off state output terminal voltage

On state RMS current

I_TRM

I_TSM

100

1.5

mA

A

Peak surge current, non-

repetitive

t_p≤ 10 ms

Power dissipation

P_diss

T_j

300

100

mW

°C

Junction temperature

Coupler

Parameter

Test condition

Symbol

Value

3750

Unit

1)

Isolation test voltage (RMS)

V_RMS

V_ISO

Total power dissipation

Ambient temperature range

Storage temperature range

Soldering temperature

P_tot

T_amb

T_stg

T_sld

350

- 40 to + 85

- 55 to + 100

260

mW

°C

2 mm from case, t ≤ 10 s

°C

¹⁾Related to standard climate 23/50 DIN 50014

www.vishay.com

2

Document Number 83505

Rev. 1.9, 26-Oct-04

K3020P/ K3020PG Series

Vishay Semiconductors

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Test condition

I_F= 50 mA

_R= 0, f = 1 MHz

Symbol

V_F

Min

Typ.

1.25

Max

1.6

Unit

V

Forward voltage

Junction capacitance

V

C_j

50

pF

Output

Parameter

Test condition

Symbol

Min

400

Typ.

Max

3

Unit

V

1)

Forward peak off-state voltage I_DRM= 100 nA

(repetitive)

V_DRM

Peak on-state voltage

I_TM= 100 mA

_FT= 0, I_FT= 30 mA

V_TM

1.5

10

V

Critical rate of rise of off-state

voltage

I

dV/dt_cr

V/µs

dV/dt_crq

0.1

0.2

V/µs

¹⁾Test voltage must be applied within dv/dt ratings

Coupler

Parameter

Test condition

V_S= 3 V, R_L= 150 Ω

Part

Symbol

I_FT

Min

Typ.

15

Max

30

Unit

Emitting diode trigger current

K3020P

mA

µA

K3020PG

K3021P

I_FT

I_H

15

8

30

15

10

5

K3021PG

K3022P

8

5

K3022PG

K3023P

5

2

K3023PG

K3036P

2

5

2

3.6

K3036PG

2

Holding current

I_F= 10 mA, V_S≥ 3 V

100

Note: I_FTis defined as a minimum trigger current

Document Number 83505

Rev. 1.9, 26-Oct-04

www.vishay.com

3

K3020P/ K3020PG Series

Vishay Semiconductors

R_S

Test condition:

dV/dt

cr

V = 2/3 V

S

DRM

(Sine wave)

R = 33 k

V~

L

I_FT

dV/dt

crq

= 30 V

V

eff

R_L

(Sine wave)

R = 2 k

L

95 10813

Figure 1. Test circuit for dV/dt_crand dV/dt_crq

95 10814

I_F

≥ I_FT

I_F= 0

dv / dt_crq

dv / dt_cr

dv/dt_crHighest value of the “rate of rise of off-state voltage” which does not cause any switching from the

off-state to the on-state

dv/dt_crqHighest value of the “rate of rise of communicating voltage” which does not switch on the device again,

after the voltage has decreased to zero and the trigger current is switched from I_FTto zero

Figure 2.

270

+5 V

M

VAC ~

0.1 µF

TTL

Galvanic separation

95 10815

Figure 3. Motor control circuit

www.vishay.com

4

Document Number 83505

Rev. 1.9, 26-Oct-04

K3020P/ K3020PG Series

Vishay Semiconductors

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1

This optocoupler is suitable for safe electrical isolation only within the safety ratings.

Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter

Test condition

Symbol

I_F

Min

Typ.

Max

130

Unit

mA

Forward current

Output

Parameter

Symbol

P_diss

Max

600

Unit

mW

Power dissipation

Coupler

Parameter

Symbol

V_IOTM

Max

6

Unit

kV

Rated impulse voltage

Safety temperature

T_si

150

°C

Insulation Rated Parameters

Parameter

Test condition

Symbol

V_pd

Min

1.6

Typ.

Max

Unit

kV

Partial discharge test voltage - 100 %, t_test= 1 s

Routine test

Partial discharge test voltage - t_Tr= 60 s, t_test= 10 s,

V_IOTM

6

kV

Lot test (sample test)

(see figure 5)

V_pd

R_IO

1.3

kV

Ω

10¹²

10¹¹

10⁹

Insulation resistance

V

_IO= 500 V

_IO= 500 V, T_amb= 100 °C

_IO= 500 V, T_amb= 150 °C

Ω

(construction test only)

V

IOTM

t , t = 1 to 10 s

1

2

675

600

525

450

375

300

225

t , t = 1 s

3

t

4

= 10 s

= 12 s

test

P

si

(mW)

t

stres

V

Pd

V

IOWM

IORM

I

(mA)

si

150

75

0

t

3

t

test 4

t

1

t

Tr

= 60 s

t

2

t

stres

13930

0

25

50

75

100 125 150

t

95 10925

T

amb

( °C )

Figure 4. Derating diagram

Figure 5. Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

Document Number 83505

Rev. 1.9, 26-Oct-04

www.vishay.com

5

K3020P/ K3020PG Series

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

400

1.5

Coupled device

1.4

300

I ı

I

FT

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

I =100mA

T

Phototransistor

IR-diode

200

100

0

20

40

60

80

100

96 11701

T

amb

– Ambient Temperature (°C )

–30–20 –10

0

10 20 30 40 50 60 70 80

96 11923

T

amb

– Ambient Temperature (° C )

Figure 6. Total Power Dissipation vs. Ambient Temperature

Figure 9. Relative On - State vs. Ambient Temperature

1000

100

10

100

V

I =0

F

=100V

DR

10

1

0.1

1

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

- Forward Voltage ( V )

20 30 40 50 60 70 80 90 100

– Ambient Temperature (°C )

96 11862

V

96 11924

T

amb

F

Figure 7. Forward Current vs. Forward Voltage

Figure 10. Off - State Current vs. Ambient Temperature

1.5

250

200

150

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

V =3V

S

R =150ıΩ

L

I

=30mA

FT

100

50

0

–50

–100

–150

–200

–250

–30–20 –10

0

10 20 30 40 50 60 70 80

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

– On–State Voltage ( V )

96 11922

T

amb

– Ambient Temperature (°C )

96 11926

V

TM

Figure 8. Relative Threshold Forward Current vs. Ambient

Temperature

Figure 11. On - State Current vs. Ambient Temperature

www.vishay.com

6

Document Number 83505

Rev. 1.9, 26-Oct-04

K3020P/ K3020PG Series

Vishay Semiconductors

Figure 12. On - State Current vs. Ambient Temperature

250

200

150

100

50

I

=15mA

FT

0

–50

–100

–150

–200

–250

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

– On–State Voltage ( V )

96 11925

V

TM

Package Dimensions in mm

14770

Document Number 83505

Rev. 1.9, 26-Oct-04

www.vishay.com

7

K3020P/ K3020PG Series

Vishay Semiconductors

Package Dimensions in mm

14771

www.vishay.com

8

Document Number 83505

Rev. 1.9, 26-Oct-04

K3020P/ K3020PG Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83505

Rev. 1.9, 26-Oct-04

www.vishay.com

9

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

1

型号:	K3036P
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	TELEFUNKEN MICROELECTRONICS GMBH
Reach Compliance Code：	unknown
风险等级：	5.87
Is Samacsys：	N
最大输入触发电流：	0.0036 A
最大绝缘电压：	3750 V
JESD-609代码：	e0
安装特点：	THROUGH HOLE MOUNT
元件数量：	1
最大通态电流：	0.1 A
最大通态电压：	3 V
最高工作温度：	85 °C
最低工作温度：	-40 °C
光电设备类型：	TRIAC OUTPUT OPTOCOUPLER
峰值浪涌电流：	1.5 A
断态重复峰值电压：	400 V
子类别：	Optocoupler - Trigger Device Outputs
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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